碲镉汞红外探测器高低温循环特性研究

由于卫星长寿命的要求与机械制冷机有限寿命的矛盾,制冷机必须采用间歇式工作模式,因此星载碲镉汞红外探测器在太空中工作会经受从常温(20℃)到低温(-173℃以下)的成千上万次的温度循环,这给红外探测器带来了新的可靠性问题.本文介绍了自主研发的高低温循环试验系统,液氮致冷,温度循环范围为295K到100K.利用试验系统对两种型号的红外探测器组件进行了温度循环试验可靠性研究,测试和统计了循环试验前后的电阻、信号和噪声变化,针对具体试验结果做了分析和解释,为器件的工艺研发和改进提供了参考.     

碲镉汞红外探测器高低温循环特性研究

由于卫星长寿命的要求与机械制冷机有限寿命的矛盾，制冷机必须采用间歇式工作模式，因此星载碲镉汞红外探测器在太空中工作会经受从常温（20℃）到低温（-173℃以下）的成千上万次的温度循环，这给红外探测器带来了新的可靠性问题。本文介绍了自主研发的高低温循环试验系统，液氮致冷，温度循环范围为295K到100K。利用试验系统对两种型号的红外探测器组件进行了温度循环试验可靠性研究，测试和统计了循环试验前后的电阻、信号和噪声变化，针对具体试验结果做了分析和解释，为器件的工艺研发和改进提供了参考。     

InSb焦平面探测器高低温循环特性研究

制冷型InSb红外焦平面探测器工作时需降温至低温(80 K),器件在整个生命周期会经受从常温(300 K)到低温(80 K)的上千次高低温循环。针对该型探测器开展了高低温循环特性试验,测试和分析了上千次高低温循环过程中器件光电性能、杜瓦热负载和J-T制冷器特性的变化。试验结果表明,探测器可以经受至少2 000次高低温循环,并且探测率变化的幅度5.5%、响应率变化的幅度4.8%、盲元数未发生增加。研究结果为器件的工艺研发和改进提供了参考。     

锑化铟红外焦平面探测器盲元失效问题的研究

锑化铟红外焦平面探测器将要在寿命周期中于室温到77K的温度范围内工作几千次.由于不同材料的热膨胀系数不一致,热循环会造成焊点疲劳和失效,最终导致焦平面探测器失效.通过研制的温度循环设备,了解了铟焊点失效的原因,并用ANSYS软件对铟柱的机械失效现象进行了分析.通过分析铟柱高度和可靠性之间的关系,得出铟柱高度的增加可以提高探测器的可靠性.介绍了焊接可靠性的评价方法.改进后的焊接工艺可大幅提高探测器的可靠性.     

用于低温半导体器件筛选的新型温度循环设备

在某些情况下斯特林制冷机采用间歇式工作方式,以延长卫星在太空中的服务年限,因此由斯特林机致冷的低温半导体器件如HgCdTe中长波红外探测器会经受成千上万次从-173℃以下到常温的温度循环,这个过程可能会造成器件的失效.为了研究器件的失效机理和可靠性,帮助筛选器件,本文介绍了一种自制新型的温度循环实验设备,型号TCE-a.经过数千次温度循环,设备满足器件筛选实验要求.     

杜瓦/快速起动节流制冷器集成体及杜瓦/斯特林循环制冷机集成体

红外探测器必须在大约80K低温下才能正常工作。因此,它一定要装在杜瓦中,而且要有节流制冷器或制冷机给其提供低温环境。随着红外技术的迅速发展,出现了杜瓦/快速起动节流制冷器集成体和杜瓦/斯特林循环制冷机集成体。杜瓦/快速起动节流制冷器集成体将杜瓦与快速起动节流制冷器制做为一体,消除了原与节流制冷器相配合的杜瓦芯柱,降低了能耗,诚小了体积,减轻了质量。这种集成体中的快速起动节流制冷器是以玻璃为材料的平面状快速起动节流制冷器,它采用两级制冷,第一级选用氮-碳氢化合物混合气体为工质,第二级选用纯氮气体为工质,在快速起动节流制冷器內装有微型喷射泵,这样,不仅提高了节流制冷器制冷效率,而且可使快速起动节流制冷器制冷温度达70K以下,有利地提高了红外探测器的工作性能。杜瓦/斯特林循环制冷机集成体将杜瓦与斯特林循环制冷机制做为一体,斯特林循环制冷机冷指与杜瓦芯柱合二为一,红外探测器直接安装于斯特林循环制冷机冷指之上,消除了芯柱热传导、斯特林循环制冷机与杜瓦之间连接的热偶合器及其产生的热阻,较大地降低了系统能耗,减少了斯特林循环制冷机体积,减轻了斯特林循环制冷机质量。     

不同斯特林制冷机驱动盖板的探测器热仿真

斯特林制冷机作为红外探测器的重要组成部分,可为红外探测器提供必需的低温工作环境,确保红外探测器正常工作,有效的斯特林制冷机散热设计,可提高红外探测器的工作性能。本文基于Ansys 有限元软件,对不同制冷机驱动盖板结构的红外探测器组件进行了热仿真计算,结果表明,红外探测器组件内制冷机驱动板和电机外壳的温度较高,其最高温度出现在驱动板的驱动元器件位置。制冷机驱动盖板由平板式结构改为凸台式结构、增大驱动盖板和导热垫的导热系数可有效改善红外探测器组件的散热性能,红外探测器组件的最高温度可减小8.5。     

红外焦平面探测器贮存寿命试验研究

本文以红外焦平面探测器为研究对象,在充分分析历年来国内红外焦平面探测器贮存寿命试验数据的基础上,研究了产品的失效模式和失效机理,并对贮存寿命试验前后关键参数指标变化量进行了深入分析,为全面评价红外焦平面探测器产品质量和可靠性提供了依据,为后续红外焦平面探测器的标准制修订工作奠定了基础。     

HgCdTe探测器In焊凸点的失效及有限元分析

卫星工作时,由斯特林机致冷的HgCdTe中长波红外探测器会经受从-173℃以下到常温的成千上万次温度循环.由于不同材料的热膨胀系数(TEC)不匹配,这样就会造成电极封装的疲劳和失效,进而影响卫星的正常工作.利用中科院上海技术物理研究所研制的温度循环设备TCE-a,模拟了真空环境下的斯特林制冷机的开关机模式,发现了In焊凸点的两种失效模式.运用有限元方法,对In焊凸点的失效进行了力学分析.     

液氮温区集成式数字温度传感器设计

温度传感器是制冷型红外焦平面探测器的重要组成部分,它用于测量探测器工作温度,其输出用于制冷机控制,从而控制探测器温度。探测器的工作温度将直接影响探测器的性能,如信噪比、探测率和盲元率等。针对传统PN结温度传感器需要模拟信号处理电路及易受电磁干扰的弊端,设计了一种基于CMOS工艺的集成式数字温度传感器,可以集成到红外焦平面探测器读出电路中,直接通过SPI接口输出数字测温值。设计的集成式数字温度传感器采用0.35 m CMOS工艺流片,芯片面积为380 m500 m（不包含PAD）,在电源电压2.5 V和采样频率6.1次/s条件下,功耗为300 W,分辨率0.061 6 K。在77 K温度下输出的RMS噪声为0.148 K。测试结果表明,集成式数字温度传感器可以应用于制冷型红外焦平面探测器温度测量。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-