PCF8811：80×126象素LCD驱动方案

NXP公司的PCF8811是低功耗CMOS LCD控制和驱动器,用于驱动80行、128列图形显示,或者79行、128列的图形显示和含有128个符号的图标行。所有显示所需的功能由一个独立的芯片提供,包括一个片上生成的LCD电源和偏置电压,     

PCF8811:80×126象素LCD驱动方案

N×P公司的PCF8811是低功耗CMOS LCD控制和驱动器,用于驱动80行、128列图形显示,或者79行、128列的图形显示和含有128个符号的图标行.所有显示所需的功能由一个独立的芯片提供,包括一个片上生成的LCD电源和偏置电压,需要很少的外部组件,功耗很低.PCF8811可以通过并行总线、串行总线或I2C总线接口连接微控制器.     

AVR单片机入门及C语言高效设计实践(十二)

<正> ATMEAG16L 驱动128×64点阵图形液晶模块的实验点阵图形液晶模块是一种用于显示各类图像、符号、汉字的显示模块,其显示屏的点阵像素连续排列,行和列在排布中没有间隔,因此可以显示连续、完整的图形。当然它也能显示字母、数字等字符。点阵图形液晶模块依控制芯片的不同,其功能及控制方法与点阵字符液晶模块相比略有不同。点阵图形液晶模块的     

实验室无线信息显示牌的研究与制作

介绍一种实用小型的LED显示系统,它采用MCS51单片机控制模块、LED显示驱动模块和无线通信模块。通过无线通信模块实现显示内容的遥控切换。在驱动电路的设计上,采用行扫描列驱动方式,增加了行扫描列驱动扩展功能。在硬件设计中,采用结构化的单元模块设计,具有可扩展性,显示亮度高且稳定。该设计不仅可降低硬件成本,而且还可降低功耗。经调试证明,该设计合理且实用。     

基于CS64SLD01液晶显示模块的开发与应用

本文介绍了自行研制的彩色STN_LCD驱动芯片CS64SLD01,并阐述了基于CS64SLD01的彩屏液晶显示模块的开发.最后给出了彩屏液晶显示模块在图形显示中的应用方案.     

全彩128×160有机发光显示器驱动电路

该有机发光显示器驱动电路由一个 384 通道列驱动电路和一个 160 通道行驱动电路组成.列驱动电路是一个内置128×3×160×4 bit 显示数据存储器的 128×3 红绿蓝控制器,支持用户可编程 4/8 bit 灰度控制,高精度的电流匹配电路和内建预充电路确保了均匀的亮度和高质量的灰度显示.驱动电路可通过 8 bit/16 bit 并行接口直接与微处理器相连,显示数据可以存储在内部,还可独立于微控制器产生有机发光显示器的驱动信号.行驱动电路有可选的电压预充电路和内建低接通电阻确保在高速扫描时的亮度均匀.该驱动电路是一个低功耗低输出阻抗的有机发光显示控制器.     

T6963C控制器在LCD上的典型应用

前言在中规模图形液晶显示模块中，内置T6963C控制器的液晶显示模块是目前较为常用的产品。东芝公司的T6963C具有独特的硬件初始值设置功能，显示驱动所需的参数如占空比系数、驱动传输的字节数、行及字符的字体选择等均由引脚电平设置，这样T6963C的初始化在上电时就已经基本设置完成，软件操作的主要精力就可以全部用于显示画面的设计上了。本文结合一种液晶显示器说明内置T6963C控制器型液晶显示模块的应用。EDM240128 显示原理、特点及接口EDM240128EDM240128 LCD液晶显示驱动控制系统由三片T6A39列驱动器和二片T6A40行驱动器…     

基于单片机的LED点阵显示控制的设计

LED点阵显示屏具有运行可靠、安全、节能、成本低、使用方便等特点.本文讨论了基于单片机的LED点阵显示控制系统设计所用的各种方法,制作出一个以单片机作为控制单元的点阵显示屏.设计采用动态扫描的显示方法,选取74LS154和74LS595芯片分别构成行、列驱动电路,单片机通过行、列驱动电路,可对点阵显示模块单元进行行列信号控制,达到控制点阵显示屏正常显示汉字、图片信息的设计要求.     

TN-LCD的数字信号驱动方法

提出了用数字信号取代多电平信号驱动TN-LCD的方法,利用数字信号相位差和占空比的不同,实现行(COMMON)和列(SEGMENT)信号电压差均方根值差异而达到显示图形的效果。文中首先构造了数字单行扫描模式,但其对显示对比度影响较大;进而借鉴了多路寻址液晶驱动的原理,构造出数字两行扫描模式改善了显示对比度;最后得到的数字两行扫描模式的TN-LCD驱动方法具有无静态功耗、驱动能力强、成本低、实现灵活等优点。低于16行LCD应用条件下其显示对比度已接近传统方法。通过FPGA和流片试验,结果证明此方法是可实现的。实际观察到的显示对比度和静态工作电流已达到预期目标。     

全彩128×160液晶显示器驱动电路

该液晶显示器驱动电路由一个 384 通道列驱动电路和一个 160 通道行驱动电路组成.列驱动电路是一个内置 128×3×160×4 bit 显示数据存储器的 128×3 红绿蓝控制器,具有丰富的指令集,内建静态驱动电路指示不同闪速,可使用内置振荡器或输入外部时钟,液晶显示器的建立时间256级可调.行驱动电路有内建的 160 bit双向移位寄存器,支持多种显示模式,内建DC/DC升压电路,驱动电源内建/外接可选.该驱动电路是一个低功耗低输出阻抗的液晶显示控制器.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-