MPEG-4形状编码器二进制运动估计的VLSI结构设计

阐明了所设计的二进制运动估计的VLSI硬件结构.首先介绍了MPEG-4形状编码中BME的基本原理,以及前人设计的一种DDBME结构;接着分析指出DDBME在利用数据冗余方面的缺陷,并给出了一种改进的运动估计结构,通过扩大PE阵列以及重新安排数据的分发机制,可以达到75%的数据利用率.硬件仿真结果与软件运行结果的对比表明了本设计的正确性,综合结果也说明了本设计可以在最低5.93 MHz的频率下满足MPEG-4 Core Profile & Level2的实时编码,可用于MPEG-4的VLSI实现.     

权集保护自适应滤波算法的研究

针对自适应滤波算法中稳健性和灵敏度之间的矛盾，本文提出了一种典型权集保护的方法，并在误差聚类和欧几里德最小距离选优的基础上，构造了一种算法结构。在此算法结构中，传统的FIR自适应滤波算法被推广为粗调和细调两个过程。最后，在信道均衡器仿真实验中，验证了这种算法结构在抗突发扰动和降低跟踪差方面的优良性能。     

一个符号神经网络的学习算法

本文首先根据神经科学和认知科学的研究，提出了一种符号神经网络结构，该结构溶符号机制和神经网络于一体，然后在此基础上研究了其学习算法，该算法结合神经网络ＢＰ学习算法和符号机制中学习算法的特点；最后通过实验，证实该算法的可行性和先进性。     

多尺度地形结构提取方法

在地形分析中，地形结构特征的研究具有重要的意义，文章将三维地形看成一种多层次的嵌套结构，采用小波分析实现了地形的多尺度表示，并根据三维地形数据本身的特点，发展了两种多尺度地形上的地形结构线提取算法：结构算法和流水算法。文中最后给出了部分实验结果。该算法实现简洁，速度快，效果好。     

基于水印结构的脆弱性数字水印技术

文章基于Yeung—Mintzer脆弱水印算法，提出一种新颖的水印结构处理技术．可用于数字图像完整性认证的脆弱水印算法，并可以解决原有算法所存在的安全问题。由于采用空域中嵌入水印的方法．该算法具有良好的局部检测性能。理论分析和实验结构证明了水印结构处理技术的有效性。     

血管数字减影图象中的结构特征提取

基于Ｘ线数字减影图象的三维血管结构重建很大程度上依赖于图象中血管的有效检测和结构关系描述。本文给出一个在局部特征检测基础上的结构特征提取和组织方法，涉及结构分析之前的中间视觉处理层次，即将图象中主要结构分离出来供结构分析之用。首先用一个突出结构检测算法独立地组织和选择中轴曲线片断和边缘曲线片断，然后将两者信号相结合以验证突出结构算法获得的结果并滤除噪声结构。     

面向实时视频压缩的单片硬件结构

从视频信号的特征出发，简要说明了实时视频压缩的常用算法及其国际标准。通过系统地分析了视频压缩算法中内在的模块特性和并行特性，结合数字信号处理领域中具有并行实现机制的典型硬件结构，得出了可用于实时视频压缩的两种单片硬件结构模型。     

基于面积的LUT结构FPGA的工艺映射

提出了一种基于面积的针对ＬＵＴ结构ＦＰＧＡ的工艺映射算法。该算法在映射的过程中充分利用了网络节点的属性，通过计算节点的参数，采用线性规划方法给出网络的目标函数和约束条件，把一个电路网络的问题转化为纯数学的规划问题求解，映射问题转化为节点属性的分配问题，来得到最后的映射结构。与其它算法相比，该算法的映射结构较优。     

面向密码算法的异步可重构结构设计

针对FPGA和ASIC在实现密码算法时的不足之处，本文介绍了一种面向密码算法的异步可重构结构。该结构的运算功能由一个可重构单元阵列提供，数据通路由可重构单元之间的相互连接实现，异步通信采用握手信号完成。在分析握手信号传输延时对可重构结构的影响后，文章提出了一种适合该结构的单元信号传输握手控制电路。同时在单元结构中，使用改进的DSDCVS逻辑来设计其运算电路，减小了单元的面积，提高了单元的工作速度。应用实例表明，在实现密码算法时，面向密码算法的异步可重构结构表现出了比FPGA更好的性能。     

Crossbar交换结构高性能调度算法研究

文章对高速路由器交换技术中普遍采用的Crossbar交换结构的各种主要调度算法进行了分类阐述和对比分析，讨论了调度算法的基本问题，主要分析了最大匹配类算法和权重匹配类算法两种目前的主流调度算法，最后对高性能调度算法研究的最新进展进行了介绍。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-