采用KS0713控制芯片的SG12864-5C液晶显示模块的应用

本文介绍了SG12864-5C液晶显示模块的功能,及液晶显示开发的基本步骤.详细介绍了针对KS0713的字模点阵数据的提取和传输的技巧.     

基于FPGA的图形点阵液晶显示模块的应用设计

提出了一种基于FPGA和T6963C模块来控制液晶显示的实现方法,介绍了液晶显示控制器T6963C的性能特点,给出了FPGA与液晶显示屏WG240128B的硬件接口电路、软件设计流程和液晶显示程序。     

电能质量监测装置人机界面的设计与实现

本文介绍了内藏液晶显示控制器(T6963C)的液晶显示模块在电能质量监测装置中的应用和实现,介绍了液晶显示控制器T6963C的众多优点,给出了T6963C与80C196的硬件接口形式,具体分析了如何具体实现显示的若干模块化程序的设计流程。     

在点阵式液晶模块人机交互界面上实现动态显示效果

在基于单片机系统的智能化仪器仪表中,内藏控制器的中小尺寸液晶显示模块在人机交互界面中的应用日益广泛.为了增强界面的吸引力,在液晶显示中加入和丰富动态显示效果是十分必要的.文中以内藏T6963C控制器的点阵式液晶显示模块为例构建单片机实验系统,介绍了流行的单片机编程语言C51在人机交互界面中的几种动态效果编程的实现方法和注意问题.     

单片机液晶显示系统的设计

以C8051F单片机和液晶显示控制器KS0108为核心,设计了单片机控制的液晶显示系统。重点研究了图形的动态显示技术,介绍了液晶显示模块的硬件、软件特性。文中设计的电路在C8051F020单片机仿真实验系统上进行了仿真,实验结果表明,设计达到了预期目标。     

图形液晶显示模块G121C在等离子体激励源中的应用

为了方便地研究等离子体激发过程的优化及控制,设计了等离子体激励源的液晶显示系统.结合图形液晶显示模块G121C与C8051F020,实现了系统相应的硬件电路和控制程序.结合G121C中集成液晶控制器SED1335的丰富指令系统,可以实现图文混合显示,并进行波形的平滑滚动.从而实现等离子体激励频率、功率、反射系数和驻波比等的动态显示,为等离子体激发的研究以及应用研究建立了良好的人机界面.     

内藏液晶显示控制器T6963C与DSP的接口应用

点阵式液晶显示模块具有性能稳定、适合应用于便携式智能仪器仪表等特点,是一种较低价位、具有较高显示功能的显示器件。文中介绍了内藏液晶显示控制器T6963C的液晶显示模块的特点及其显示方式。在此基础上,给出了该液晶显示模块与基于DSP(数字信号处理器)TMS320LF2407A的嵌入式系统的硬件接口电路和部分C语言代码。最后,实现了该液晶显示模块在TMS320LF2407A的嵌入式系统中的液晶显示功能,成为该现场温度监控系统的重要组成部分。其程序与硬件逻辑图也可为其他DSP系统提供参考。     

基于液晶显示的有限状态机在人机界面中的应用

通过分析有限状态机状态转移的特性,提出了利用有限状态机设计液晶显示人机界面的方法。以液晶显示菜单的转换为例,详细论述了使用C语言设计人机界面的过程。使用SPLC501C液晶显示模块实现了菜单的转换功能,且给出了显示菜单转换的液晶显示模块驱动程序。实际应用表明,这种方法易于扩展菜单数量,避免了非法状态的出现,菜单转换迅速、稳定可靠。     

浅析T6963C液晶显示模块与PIC单片机的接口技术

介绍了基于T6963C液晶显示模块的基本特性及其与PIC单片机的接口方法。通过分析PIC单片机的时钟与指令周期关系和T6963C对MCU／MPU时序的要求,得出了基于T6963C液晶显示模块与PIC单片机接口方法,并给出了以单片机PIC16F74为例的软硬件实现方法。     

嵌入式液晶显示模块UC1610的开发与应用

介绍了基于嵌入式Linux操作系统的液晶显示模块UC1610的开发与应用,对模块的驱动程序和应用程序进行了设计.详细介绍了SPI0和GPB0驱动程序的编写方法,讨论了汉字显示、字库选择及字模转换等应用程序方面的设计.实验结果表明,结合嵌入式终端S3C2410后,LCD显示效果良好.基于本文设计开发的液晶显示模块使用方便,接口丰富,有很好的商用价值.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.