HSDPA的演进:基于OFDM和MIMO的HSOPA技术

文章主要介绍了基于正交频分复用（OFDM）和多入多出（MIMO）的高速OFDM分组接入（HSOPA）技术。详细阐述了其优点所在，最后对HSOPA的频谱规划提出了建议。     

HSDPA的演进:基于OFDM和MIMO的HSOPA技术

基于正交频分复用（OFDM）和多入多出（MIMO）的高速OFDM分组接入（HSOPA）是UMTS网络中高速下行分组接入（HSDPA）的下一步演进技术.通过利用OFDM及MIMO技术,HSOPA可以提高频谱效率,支持更多的用户数目和更高的QoS保证,降低每兆字节的传输成本,从而大大提高运营商的商业竞争力.     

基于OFDM和MIMO的HSOPA技术

基于正交频分复用(OFDM)和多入多出(MIMO)的高速OFDM分组接入(HSOPA)是通用移动通信系统(UMTS)网络中高速下行分组接入(HSDPA)的下一代演进技术。通过利用OFDM和MIMO技术,HSOPA可以提高频谱效率,支持更多的用户数目和更高的QoS保证,降低每兆字节的传输成本,从而大大提高运营商的商业竞争力。     

HSDPA的演进——基于OFDM和MIMO的HSOPA技术

基于正交频分复用(OFDM,Orthogonal frequency division multiplexing)和多入多出(MIMO, Multiple Input Multiple Output)的高速OFDM分组接入(HSOPA,High-Speed OFDM Packet Access)是UMTS网络中高速下行分组接入(HSDPA,High-Speed Downlink Packet Access)的下一步演进技术。通过利用OFDM,MIMO技术,HSOPA可以提高频谱效率,支持更多的用户数目和更高的QoS保证,降低每兆字节的传输成本,从而大大的提高运营商的商业竞争力。     

HSDPA技术的演进——HSOPA

根据3GPPR5,R6版本协议的技术声明以及现在通信技术的需求,介绍了即将被商用的HSDPA(高速下行分局接入技术)的演进技术——HSOPA(高速OFDM分组接入技术)。简单介绍了HSOPA的技术特点,并介绍了HSOPA的关键技术(OFDM及MIMO技术等),以及展望了HSOPA技术向后3G及4G的过渡情况。     

HSOPA实现的关键技术

文中根据3GPP R5,R6版本协议的技术声明以及现在通信技术的需求,介绍了即将被商用的HSDPA(高速下行分组接入技术)的演进技术--HSOPA(高速OFDM分组接入技术).文中从3G技术的发展谈起,引出所要讨论的HSOPA技术,随后简单介绍了HSOPA的技术特点,并着重介绍了HSOPA的关键技术(OFDM及MIMO技术等),最后展望了HSOPA技术向后3G及4G的过渡情况,提出所讨论的HSOPA技术的可实现性.     

HSOPA关键技术的研究

介绍了即将被商用的HSDPA(高速下行分局接入技术)的演进技术——HSOPA(高速OFDM分组接入技术)、HSOPA技术特点及HSOPA的关键技术,并展望了HSOPA技术向后3G及4G的过渡情况。     

地面数字电视广播中MIMO-OFDM关键技术

本文主要介绍了欧洲地面数字电视广播标准DVB-T/T2系统中的MIMO和OFDM关键技术.简要叙述了一般DVB-T系统的组成原理,分别介绍了MIMO和OFDM技术基本原理与特点,列述了其中关键技术.OFDM技术和MIMO技术相结合,既能提高频谱利用率,又能提高分集增益和系统容量,有效对抗频率选择性衰落成为新一代DVB-T2的关键技术.     

自适应比特功率分配的MIMO OFDM系统性能

该文首先分析了多天线发射和接收(MIMO)的OFDM系统模型。然后针对在多径衰落信道下,OFDM中一些深度衰落的子载波降低了系统性能。该文把一般多载波系统中的自适应比特功率分配算法推广应用到多天线OFDM系统中。同时研究了自适应MIMO OFDM系统的频谱效率。仿真结果表明,自适应比特功率分配提高了MIMO OFDM的误比特率性能和频谱效率。     

MIMO-OFDM下一代无线局域网技术研究

MIMO-OFDM是下一代高速无线局域网标准IEEE 802.11n的核心技术。将MIMO技术和OFDM技术结合是无线通信领域智能天线技术的重大突破。MIMO技术能够在空间中产生独立的并行信道同时传输多路数据流,有效地提高了系统的传输速率;而OFDM技术具有优越的抗多径能力和频谱利用率,将两者结合能有效地解决无线通信中带宽效率和多径衰落的问题。在介绍MIMO和OFDM技术的基础上,着重讨论了其在应用中的关键技术。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-