大数据平台的关键技术及组网方案

基于大数据发展的趋势和电信运营商面临的挑战,分析了建设大数据平台的重要性和必要性.结合运营商实际需求,提出了大数据平台建设的关键技术、系统架构、设备配置方法和组网方案等,对各电信运营商大数据平台的规划、设计、建设提供指导意见.     

电信运营商省级大数据平台建设方案探讨

大数据时代的到来,让传统电信运营商面临不小机遇。本文总结当前运营商 IT 支撑平台建设和企业数据分布情况,分析国内运营商大数据发展所处的阶段;给出大数据平台建设架构和技术方案,并对电信运营商大数据平台建设方案中的关键点进行研究。     

电信运营商省级大数据平台建设方案

大数据时代的到来,让传统电信运营商面临不小机遇.本文总结当前运营商IT支撑平台建设和企业数据分布情况,分析国内运营商大数据发展所处的阶段;给出大数据平台建设架构和技术方案,并对电信运营商大数据平台建设方案中的关键点进行研究.     

运营商大数据安全保障体系研究

运营商的大数据可以为传统和新兴领域提供精准的预测和分析,帮助这些领域降低成本、提高运营效率和创新服务方式。然而,安全问题仍是阻碍运营商大数据应用发展的重要因素。本文通过分析运营商大数据应用的典型模式和主要风险,提出了大数据安全保障体系框架,该框架对运营商大数据安全保障体系建设具有较强的指导意义。     

电信运营商大数据应用系统建设方案研究

随着互联网的高速发展,全球数据生产高速增长,信息已成为企业战略资产,而大数据被业内普遍认为是电信运营商"去管道化"最有可能的实现方式之一,大数据应用系统的建设对电信运营商而言迫在眉睫。本文对电信运营商大数据应用系统的建设进行探讨,对大数据平台的功能架构、数据库建设方式、数据采集方案等进行研究,力图从解决方案上对电信运营商省级公司部署大数据平台提供借鉴。     

针对运营商的大数据建设方案研究

随着大数据应用在互联网行业的蓬勃发展,大数据逐步成为国内外运营商的关注焦点。首先基于电信运营商面临的挑战和建设难题,分析建设大数据平台的重要性和必要性;然后,结合运营商实际需求,提供了大数据平台建设的关键技术分析、系统架构、设备配置方法和组网方案等,对运营商进行大数据平台的规划、设计以及建设具有很好的借鉴意义。     

运营商大数据平台建设方案研究

当前国内外运营商通过“搭平台、做应用”,积极探索大数据技术。面对大数据浪潮,电信运营商既有巨大的时代机遇,也面临若干的挑战,如何挖掘运营商长期积淀的数据价值,发挥自身优势,是大数据从业者们需要深入思考和关注的。首先对大数据平台的总体演进思路进行了概要介绍;其次结合实际提出了一种大数据平台建设方案,重点介绍了大数据平台的体系结构、数据分析思路、平台网络拓扑及硬件配置;同时对基于大数据平台的应用展开了探讨;最后对运营商大数据平台的发展方向进行了展望。     

共享开放的运营商大数据平台架构研究

当前电信运营商大数据业务模式和应用场景日趋清晰,对内对外大数据应用支撑要求搭建集约和开放共享的大数据平台。Hadoop生态系统的更新与扩展、混合计算模式与内存计算等技术发展为大数据平台建设提供了新的技术思路。文章通过分析运营商大数据建设面临的业务和技术新形势,提出近期运营商大数据平台建设向共享和开放能力平台的演进方向和核心要求,并从总体架构、技术架构等方面详细给出一种集约、融合、开放的运营商大数据平台架构设计方案及其工程实践案例。     

浅析5G场景下运营商大数据平台建设策略

随着5G网络的发展,运营商已开始布局大数据系统,并助推业务增长。通过分析运营商现有网络现状,在层次架构、数据集成、资源部署三个方面给出大数据建设策略,最后对未来大数据发展给出意见和建议。     

面向通信运营商的大数据建设方案分析

在当前移动互联时代,云计算、物联网等新的信息技术的发展,使得网络中的数据信息呈现出几何递增的趋势,大数据逐渐成为了通信运营商关注的焦点。文章结合大数据的相关概念,对大数据平台建设的有效方案和措施进行了分析,希望能够为运营商大数据平台的设计规划提供一些借鉴。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.