共享有限范围多波长和全单波长转换器的光组播冲突解决方案

研究了一种有限范围多波长转换器(LMWC)反馈共享连接和全单波长转换器(FRWC)输出共享连接相结合的解决全光组播波长资源竞争的解决方案,并提出有限范围多波长转换器优先的波长变换调度算法,以最大双向匹配最小边长权重方法选择多波长转换器解决冲突光组播波长变换。仿真结果表明:所提的结构与输出共享全多波长转换器(FMWC)节点结构或输出共享FRWC节点结构相比,都能够明显降低光组播节点的分组丢包率(PLP),减少系统需求LM-WC多波长转换器的数目,提高多波长转换器的利用率;LMWC具有不同波长转换范围对光分组冲突解决性能也有影响。     

采用部分共享光缓存和共享波长转换器的光分组交换节点性能分析

本文研究了采用部分共享缓存(PSB)和共享波长转换器(SWC)的光分组交换节点在自相似流量下分组丢失率和时延与输出光缓存深度、循环共享光缓存的深度和组数以及波长转换器数量之间的关系,并讨论了相关的尺度和规模问题.结果表明,部分共享光缓存和共享波长转换器的光分组交换节点交换结构可以达到很高的性能;采用共享方式可显著减少波长转换器的数量;在保持共享缓存总的深度不变的情况下,适当增加循环共享光缓存组数可以使交换达到更好的性能.     

一种基于负载选择的光分组交换缓存结构

提出了一种基于业务负载选择的光分组交换(OPS)网络的光缓存结构,根据业务负载大小灵活选择缓存方式。输出缓存光纤延迟线(FDL)采用分段式共享机制配置,输出/反馈共享缓存模块采用简并式配置,以提高有限数目FDL的利用率。分析和仿真表明,这种可选择的缓存结构可以有效降低丢包率和OPS节点需求的FDL数目。     

FDL结构竞争解决的研究

使用光纤延时线（FDL）来解决光分组交换中的竞争问题,研究系统丢包率、时延与输入端口数、输出端口数、FDL数之间的关系,并比较输入端口优先、FDL优先、输入端口和FDL优先级的三种光分组调度策略。结果表明：适当减少端口数,增大FDL数目可以使丢包率趋近于零;而适当增大端口数,减小FDL数目又可以使时延减小。因此,在使用FDL解决竞争冲突时,端口数和FDL数目的选择很重要,它们之间的关系大小直接影响到丢包率和时延的大小。     

光分组交换网络中光纤延迟线缓存技术

光分组交换网是全光网络发展的必然趋势.然而,光分组交换网络发展的瓶颈是光缓存技术.目前,在光域比较现实的还是采用光纤延迟线(FDL)作光缓存.重点研究了光纤延迟线光缓存技术,对FDL光缓存技术进行了深入的分析和归纳,并对每一种光纤延迟线光缓存调度策略的优缺点都进行了细致的分析.最后指出了光纤延迟线光缓存技术的未来研究重点和发展方向.     

共享式光缓存中的控制策略

在光分组交换（0PS）节点结构中,由光纤延迟线（FDL）所构成的光缓存是解决光分组冲突的一种非常有效的方法。对于共享式FDL光缓存,由于FDL竞争的出现会导致光缓存性能的恶化。为了有效利用光缓存,需要对光缓存资源的分配进行有效的控制。为此,针对共事式FDL光缓存,提出一种有效的光缓存控制策略,即有限贪婪模式（limited greedy mode,LGM）缓存控制策略。使用仿真实验的方法对LGM的性能进行了评估。     

一种新型的光分组交换环网体系结构

提出了一种以波长为标签的新型全光变长分组交换环网的体系结构、网络节点的光分组数据包收发模型,以及防止光分组冲突的多令牌协议。使用多令牌协议的环网在进行光分组交换时,不需要高速的光子器件,无需使用延迟线、电中继以及解决光分组的冲突问题。通过数值仿真,分析了4节点、8节点和16节点环网巾光分组各种的时延特性以及网络的吞吐量特性。结果表明,当网络负载增大时,数据包的平均时延增大,同时网络节点的吞吐量和资源利用率也随之增大;网络节点数目越多,网络的吞吐率也越大。     

定长光突发下的FDL缓存和调度

为了改善光突发交换的阻塞性能,分析了定长光突发交换在FDL光缓存的排队和调度,提出了基于中间共享FDL光缓存结构的长队列优先(LQP)调度方案,该方案使交换端口充分共享FDL缓存单元,调度时间短,在模拟仿真中得到较好的阻塞性能结果。     

光分组交换网络中的光缓存技术研究

论述了全光缓存技术在光分组交换(OPS)网络中的应用,以及光缓存器在分组交换节点的各种配置结构,实现全光缓存的关键技术等。最后对全光缓存器的发展方向作了展望。     

一种支持扇出分割能力的光组播调度算法研究

组播调度是影响光组播分组交换节点吞吐量的重要因素.针对“一次发送”模型下的光组播调度算法对阻塞的源组播实行全部丢弃的缺点,文章基于节点共享有限波长转换器的光分组交换结构,提出了一种支持扇出分割能力的光组播调度算法,该算法采用随机丢弃阻塞的源组播复制的方法,有效地提高了端口资源的利用率.仿真结果表明,该算法与已有算法相比...     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.