0.9μm-1．7μm高性能近红外InGaAs摄像机

红外探测器一般是通过探测一场景中各种物体的热辐射差进行工作的。它们将探测到的热辐射差转换成电信号,然后再对该电信号进行处理。微测辐射热计是利用传统集成电路技术制备在一种衬底材料上的红外探测器。它们可用于气体探测、夜视以及许多其它应用领域。但普通微测辐射热计的响应时间和灵敏度会     

非制冷微测辐射热计的热平衡分析

非制冷微测辐射热计焦平面阵列技术在国外已取得了令人瞩目的成就,与其它红外探测器相比,微测辐射热计更适于开拓民用市场,目前国内在这方面的研究也已成为热点。文章介绍了微测辐射热计的物理模型及其理论计算方法,利用黑体辐射和传热理论,建立了微测辐射热计的热平衡方程,并利用MATLAB软件获得了数值运算结果。分析表明,热传导、热容、偏置方式等时微测辐射热计性能的影响是设计考虑的关键。     

金属微反射镜对非制冷氧化钒微测辐射热计的红外辐射吸收率影响分析与一种改进的微测辐射热计模型

从光学角度出发,首先讨论了单层VOx微测辐射热计中探测单元衬底上的金属反射镜的厚度以及材料对微测辐射热计红外吸收率的影响,利用软件建立了微测辐射热计的红外辐射吸收率模型,得到了厚度不同的Al反射镜对微测辐射热计模型8~14?m红外波段吸收率的影响以及厚度为0.1?m的3种不同材质的金属反射镜对同一模型红外吸收率的影响。当厚度等其他参数相同时,使用Al、Copper和Gold用作金属反射镜的材料,单层VOx微测辐射热计模型在8~14?m波段的红外吸收率并没有明显区别。另外,我们改进了一种已有的VOx微测辐射热计结构并对比了改进前后模型8~14?m红外波段的吸收率,改进后的模型平均吸收率达到了94%大于改进前初始模型的90%左右。最后,我们讨论了真空谐振腔高度与微测辐射热计桥面材料厚度对工作波段吸收率峰值处波长的影响。     

非制冷微测辐射热计热成像

文中在指出现代制冷型红外成像技术的不足,论述非制冷红外成像技术的优点之后,介绍了微测辐射热计阵列的非制冷热成像系统.首先与非制冷热电热像仪进行了比较,指出测辐射热计热成像的优势.然后描写了微测辐射热计阵列的设计,分析了桥式结构热绝缘对响应率提高所起的作用,并讨论了探测器噪声等效温差(NETD)的性能.最后概括地描述了微测辐射热计成像仪的设计.     

磁控溅射纳米VO_2（B相）热敏薄膜的制备

利用磁控反应溅射镀膜方法在低温（250℃）条件下制备了主要成分为B相亚稳态二氧化钒（VO2）的薄膜材料。电学性能测试表明：室温下该薄膜的方块电阻为50kΩ左右,电阻温度系数为-2.4%/K,可以作为非致冷红外微测热辐射热计的热敏材料。     

双层红外微测辐射热计的微桥结构仿真

非制冷红外探测器具有广阔的军事和民用前景。近年来,出现了一类性能优越的新型双层微测辐射热计型红外探测器。利用有限元分析方法和光学导纳矩阵法详细研究了两种类型的双层微测辐射热计的主要性能。结果表明,双层微测辐射热计的综合性能优于单层微测辐射热计。其中,双层S型结构的温升最优,但其力学稳定性较差,难以满足实践需要;双层U型结构的温升虽低于双层S型结构的温升,但明显优于单层微桥;重要的是,双层U型结构在光吸收性能、力学稳定性、器件制造等方面均优于双层S型结构。所以,双层U型结构的综合性能更优。还设计了一种综合性能更优的改进型双层U型结构。     

非致冷红外微测辐射热计的自热效应分析及重要参数测定

在考虑器件自热效应的情况下,对微测辐射热计的性能进行了深入地理论分析,应用了微测辐射热计的有效热导Ｇｅｆｆ概念,得出对于一定的热导的器件,存在着最佳工作偏置电流Ｉ０ｏｐｔ这一重要结论,并找到一种通过电学测量确定微测辐射热计有效热导Ｇｅｆｆ和有效时间常数τｅｆｆ的方法．试验结果与理论分析符合．     

非致冷微测辐射热计红外焦平面阵列发展现状

综述了非致冷微测辐射热计红外焦平面阵列的发展现状。     

非致冷微测辐射热计用Cd1-xZnxS高性能电阻温度系数材料

微测辐射热计是一种红外探测器,它会吸收红外辐射并略微地变热。其电阻是随温度变化的,因而可以被测量和校正。微测辐射热计最常用的材料有VOx和非晶硅,其中非晶硅的动态范围和隔热性能较差,因此基于非晶硅的微测辐射热计的应用目前仅限于消防方面。本发明提供一种电阻热系数高达1．5％-3．7％的Cd1-xZnxS薄膜材料。由于具有优良的特性,它可以在微测辐射热计类非致冷红外传感器中使用。这种薄膜材料可以用MOCVD、热蒸发或其它技术淀积。     

国外硅基UMBIRFPA制备技术研究进展

介绍了国外硅基非致冷微测辐射热计红外焦平面阵列（Ｓｉ＋ＵＭＢＩＲＦＰＡ）的典型结构，制备工艺技术以及ＵＭＢＩＲＦＰＡ的性能参数。     

Determination of Thermal Parameters of Vanadium Oxide Uncooled Microbolometer Infrared Detector

Vanadium oxide thin films are the potential candidates for uncooled microbolometers due to their high temperature coefficient of resistance (TCR) at room temperature. A 2D array of 10-element test microbolometer without air-gap thermal isolation structure was fabricated with pulsed laser deposited vanadium oxide as IR sensing layer for the first time. Infrared responsivity of the uncooled microbolometer was evaluated in the spectral region 8-15 μm. The device exhibits responsivity of about 12 V/W at 30 Hz chopper frequency for 20 μA bias current. Thermal time constant (τ), Thermal conductance (G) and thermal capacitance (C) are the thermal parameters characterize the performance of the uncooled microbolometer infrared detectors are determined as 15 ms, ～10^-3 W/K and ～3.5 × 10^-5 J/K respectively. The influence of the thermal parameters on the performance of the microbolometer is discussed.     

A New CMOS Read-out IC for Uncooled Microbolometer Infrared Image Sensor

An uncooled microbolometer image sensor, used in an IR image sensor, is made by a micro electro mechanical systems (MEMS) process, so the value of the microbolometer resistor has a process variation. Also, the reference resistor, which is used to connect to the microbolometer, is fabricated by a standard CMOS process, and the difference between the values of the microbolometer resistor and the reference resistor generates an unwanted output signal for the same input from the sensor array. In order to minimize this problem, a new CMOS read-out integrated circuit (ROIC) was designed. Instead of a single input mode, a differential input mode scheme and a simple method to compensate the resistor value are proposed. Using results from a computer simulation, it is observed that the output characteristic of the ROIC was improved and the effect of the process variation was decreased without using complex compensation circuits. Based on the simulation results, a prototype device including an ROIC that was fabricated by a standard 0.25um CMOS process and a microbolometer with a 16 x 16 sensor array was fabricated and characterized.     

微测辐射热计响应率的数值分析

介绍了微测辐射热计在外加偏置下的响应情况，建立了流偏置下微测辐射热计的响应率模型，及脉冲偏置下微测辐射热计的完整理论模型，进行了数值分析，给出了在实际工作条件下微测辐射热计响应率的仿真结果。     

微测辐射热计的建模与仿真

微测辐射热计是一种应用前景广阔的非制冷型红外焦平面器件,本文对微测辐射热计 进行了建模和仿真,并利用该模型分析、仿真了复位积分放大器CTIA (Capacitive Transimpedance Amp lifier)输出的微测辐射热计对不同黑体目标的输出电压和像元的响应率,为进一步设计、优化微测辐射热计读出电路打下了基础。     

Circuit for microbolometer bias-heating cancellation

A new circuit for microbolometer bias-heating cancellation is described. The circuit is based on the equivalence between the electrical and thermal capacitance. A replica of the bias-heating effect is generated on the electrical capacitance and is used to effectively cancel the bias heating of the microbolometer. The cancellation is tunable     

Infrared response of vanadium oxide (VOx)/SiNx/reduced graphene oxide (rGO) composite microbolometer

Much attention has been paid to the photoresponse of vanaduim oxide (VO_x) and amorphous silicon based microbolometer for long-wavelength infrared detection under un-cooled operation condition in recent decades. However, the outstanding physical and chemical properties of graphene and reduced graphene oxide (rGO) stimulate their potential for use in light-sensitive applications. Much less attention has been paid to investigate the performance on long-wavelength infrared detection of microbolometer using reduced graphene oxide/SiN_x/vanadium oxide composite films deposited on under room temperature operation. In the research, we have proposed the novel microbolometer based on VO_x/SiN_x/rGO composite films replace the as-deposited VO_x based microbolometer. It is noted that such extraordinary properties (high responsivity: 18,130 V/W and low NETD: 43.32 mK) of the VO_x/SiN_x/rGO composite presented here encourage us to contemplate on this protocol for next generation optoelectronic device engineering for infrared detection.     

室温微测辐射热计太赫兹探测阵列技术研究进展(特邀)

在室温太赫兹探测技术领域中,热敏微桥结构的太赫兹探测器具有探测波段宽、阵列规模大、集成度高、实时成像等显著特点。文中对室温太赫兹探测技术、基于热敏材料的太赫兹探测技术国内外发展现状进行了综述,分析了基于氧化钒薄膜微桥结构的非制冷长波红外焦平面探测技术,存在着太赫兹波低吸收探测性能弱的不足,针对太赫兹波探测进行优化设计,同时介绍了电子科技大学在太赫兹探测阵列吸收结构方面的部分研究工作。     

非制冷微测辐射热计的特性参数

描述了非制微测辐射热计的电热效应,推导了响应率、噪声、噪声等效功率、噪声等效温差、探测率等特性参数的计算公式,结果表明,电热效应是影响微测辐射热计性能的关键因素之一。