ISUP在S1240交换机中的实现

介绍ISUP信令方式及S1240交换机的信令方式由TUP改造为ISUP的相应局数据制作步骤。     

国内No.7信令方式综合业务数字网用户部分(ISUP)的研究

简要介绍了国内No.7信令方式综合业务数字网用户部分——ISUP,包括ISUP的功能、消息格式、基本呼叫控制、补充业务、信令配合以及ISUP的测试技术。     

新发布的12项通信行业标准及参考性技术文件简介

近日,信息产业部以“信部科[2002]236号”文及“信科部[2002]215号”文发布了12项通信行业标准,简介如下: 1.YD/T1206—2002《800MHz CDMA数字蜂窝移动通信网No.71SUP信令测试方法》 该标准规定了在800MHz CDMA数字蜂窝移动通信网中,ISDN用户部分(ISUP)基本业务、补充业务和信令配合的测试方法。适用于在测试和验收按“800MHz CDMA数字蜂窝移动通信网No.7信令方式ISUP技术要求”开发的No.7信令方式ISUP信令时使用,以检验其No.7信令方式ISUP版本是否符合进网使用要求。也适用于运营中No.7信令方式ISUP的维护和测试。新开发的No.7     

中国1号与ISUP信令配合时应注意的问题

综合业务数字网(ISDN)用户部分(ISUP)是CCITT NO.7信令方式的ISDN业务的第四级功能,是在TUP基础上扩展而成的。它不仅包括了TUP的全部信令功能,还具有ISDN基本业务和补充业务所需的信令功能,它的使用可以实现话音和非话音业务的信令统一。因此,随着电信业务需求的不断发展,各地电信公司已逐步将TUP信令中继改为ISUP信令中继已成为必然。本文讨论ISUP     

ISUP信令屏蔽

由于固定网和移动网的ISUP规范不完全相同,当网间采用ISUP信令互联时,会引发互联互通不畅。本文提出通过在关口局增加信令屏蔽功能,规避信令协议的差异,保障网络互通,并给出了ISUP信令屏蔽要求和实施步骤。     

俄罗斯ISUP的实现

随着俄罗斯通信业的发展,七号信令系统在俄罗斯得到了越来越广泛的应用。首先介绍了俄罗斯七号信令系统的功能结构、俄罗斯综合业务数字网用户部分(ISUP)特点以及俄罗斯目前常用的其他局间信令,然后阐述了俄罗斯ISUP在交换机上的具体实现,包括俄罗斯ISUP基本功能的实现和俄罗斯ISUP与其他局间信令的配合。     

No.7信令ISUP消息解析

当前我国正在对信令网进行改造,ISUP信令将逐步取代TUP信令而成为电信网的主要信令,为便于加深对ISUP消息的认识和理解,本文着重对ISUP消息的消息结构、组成特点和参数含义进行了介绍,并对一次成功的IUSP呼叫的信令消息进行了解析,从而系统地总结了解析ISUP消息的步骤和方法.     

ISUP信令屏蔽

由于固定网和移动网的ISUP规范不完全相同,当网间采用ISUP信令互联时,会引发互联互通不畅.本文提出通过在关口局增加信令屏蔽功能,规避信令协议的差异,保障网络互通,井给出了ISUP信令屏蔽要求和实施步骤.     

PSTN与NGN网络的信令交互

NGN是固网发展的必然趋势,而传统PSTN也将长期存在。SIP信令是NGN网络中的关键技术,而ISUP信令在固网中广泛应用。因此,对SIP与ISUP信令间的互通技术的研究是必需的。     

关于ISUP取代TUP的几个问题的思考

随着PSTN的演进，ISUP取代TUP已是大势所趋，在ISUP取代TUP的实施过程中，出现了一些意想不到的信令配合问题。文中分析了3个信令配合故障实例，阐述了ISUP取代TUP工作的一些想法。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.