CPLD在雷达发射机控制检测单元中的应用

随着雷达发射机技术的不断发展,越来越多的新技术应用于发射机设计中。复杂可编程逻辑器件CPLD和现场可编程门阵列FPGA,同以往的PAL和GAL器件相比,这些器件含有数量众多的可编程逻辑宏单元或逻辑块,规模大,组合能力强,设计成功能各异的逻辑电路,适合于时序、组合等逻辑电路。本文用CPLD对发射机控制功能进行综合处理,控制命令产生部分根据信号处理机通过串行链发来的控制命令产生控制命令,然后对发射机进行相应的控制,并对相关命令根据时序和故障情况进行逻辑链锁,达到最终控制发射机的目的。     

FPGA的工作原理及其应用

<正> 现场可编程门阵列(FPGA)是可编程器件。与传统逻辑电路和门阵列(如PAL、GAL及CPLD器件)相比,FPGA具有不同的结构,FPGA利用小型查找表(16×1RAM)来实现组合逻辑;每个查找表连接到一个D触发器的输入端,触发器再来驱动其它逻辑电路或驱动I/O,由此构成了既可实现组合逻辑功能又可实现时序逻辑功能的基本逻辑单元模块;这些模块间利用金属连线互相连接或连接到I/O模块。FPGA的逻辑是通过     

基于CPLD的带刻度十字丝的产生电路

针对现有十字丝产生方案中电路工作不稳定或者价格高、体积大等不足,提出了一种基于复杂可编程逻辑器件CPLD的带刻度十字丝的产生电路.利用CPLD响应速度快、集成度高、体积小的优点,将复杂的时序处理和逻辑控制集成到一块CPLD芯片中进行,电路使用很少的硬件就完成了带刻度十字丝的产生功能.实用证明,该电路工作稳定,十字丝标定准确,刻度清晰.     

基于可编程计数器的时序逻辑电路设计

介绍了基于MSI可编程计数器74LS161的时序逻辑电路设计技术,目的是探索MSI可编程计数器实现一般时序逻辑电路的扩展应用方法,即以计数器Q3,Q2,Q1,Q0端的代码组合表示时序逻辑电路的各个状态,由输入变量控制计数器的EP,ET及LD端,综合利用计数、置数、保持功能,使计数器的状态变化满足所要求的时序,用计数功能实现＂次态=现态＋1＂的二进制时序关系,用置数功能实现＂次态=预置数＂的非二进制时序关系,用保持功能实现＂次态=现态＂的自循环时序关系。所述方法的创新点是提出了MSI可编程计数器改变应用方向的逻辑修改方法。     

用EPROM构成数字逻辑电路

可编程只读存贮器 EPROM 已广泛地应用在微计算机技术上,用以存贮一些固定程序和固定数据。除此之外,我们也试用 EPROM 代替 TTL 及 CMOS 数字集成电路,设计出了各种组合逻辑电路和时序逻辑电路。采用 EPROM 代替数字集成电路的主要优点是,可使集成电路的实际安装件减少,从而使构成的电路简单,价格降低,可靠性提高。设计的电路逻辑功能愈复杂,这些优点愈突出。下面我们以 MC2716型 EPROM 为例,介绍用EPROM 构成组合逻辑电路和时序逻辑电路的设计方法及应用举例。(一)用 EPROM 构成组合逻辑电路组合逻辑电路的一般设计方法是:(1)根据所要完成的逻辑功能列出真值表;(2)利用卡诺图化简;(3)构     

CPLD实现雷达自动增益控制的优化

复杂的可编程逻辑器件可以完成较大规模的组合逻辑电路设计，提高系统的集成化。本文介绍了复杂可编程逻辑器件和电路设计的一般流程，以及数字自动增益控制电路的组成和采用CPLD设计的实现。     

基于SRAM编程技术的PLD核心可重构电路结构设计

CPLD相对于FPGA更适合实现时序逻辑较少而组合逻辑相对复杂的功能,比如复杂的状态机和译码电路等。CPLD的EEPROM编程技术不适合动态可重构的应用。本文针对CPLD的核心可编程结构：P-Term和可编程互连线,采用2．5V、0．25μm CMOS工艺设计了功能相近的基于SRAM编程技术的可重构电路结构。新的电路结构可以通过可编程方式有效控制功耗和速度的折衷,并且相对于传统的CPLD互联结构减少了50％的编程数据。在动态可重构系统中,采用上述新结构的PLD相对于FPGA可以更有效地实现可重构的复杂状态机和译码电路等应用。     

简易逻辑分析仪设计

本系统是以STC89C52单片机和复杂可编程逻辑器件CPLD的组合电路为核心,利用锁存器在时钟上升沿将输入端的数据锁存的原理,构建了一个基于实时采样和直接数据存储器存储（DMA）的简易逻辑分析仪。系统由五部分组成：按键模块、CPLD模块、DDS采样时钟发生模块、LCD显示模块、DMA数据采集模块。相比于市场上的逻辑分析仪,本系统结构简单,易制作,成本低,可同时测量8路TTL信号。本系统可以用来分析数字逻辑电路中的时序逻辑关系,本文还用该逻辑分析仪研究了51单片机对外部地址读写操作的时序,得到与单片机数据手册一致的波形时序图。     

基于Verilog HDL的ADS8322转换控制器设计

根据项目需求,采用Cyclone II系列EP2C8现场可编程逻辑门阵列（FPGA）作为控制核心,对16位高速模数转换芯片ADS8322进行控制,设计了一种基于Verilog硬件描述语言的ADS8322采样控制逻辑电路,该文详细阐明了ADS8322的特点和工作时序,采用有限状态机,实现了控制器电路的时序逻辑。同时给出采...     

DX-600发射机合成器的EPLD分析与典型故障处理

EPLD芯片（Erasab1e Programmab1e Logic Device）可擦除可编辑逻辑器件,是一种集成电路,包括一系列的编程逻辑器件,取代传统数字逻辑电路,实现可编程的组合或者时序逻辑功能.发射机的控制系统的各个板卡,均有EPLD芯片.这些EPLD芯片是板卡的核心,而这些板卡又是发射机的核心.因此,要维护好发射机,就有必要对这些EPLD芯片进行分析,熟悉发射机各个信号的控制以及信号状态的返回过程,对处理发射机故障有很大帮助.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.