位屏蔽多叉树搜索射频识别防碰撞算法

针对RFID树型防碰撞算法中时隙数多、数据通行量大等问题,提出了一种改进的多叉树防碰撞算法,阅读器准确检测碰撞位并向标签反馈碰撞位信息,标签对阅读器已知的ID位进行屏蔽,把ID号转换成连续碰撞的序列号.阅读器利用屏蔽位信息和标签返回的碰撞位编码信息,对标签进行分层分类搜索.通过对标签ID进行屏蔽,阅读器和标签间仅发送对方不知道的碰撞位信息.该算法减少了碰撞时隙和识别时隙,避免了空闲时隙,减少了阅读器和标签间的数据通信量.理论分析和仿真结果表明,该算法减少了系统的时隙总数和数据通信量,提高了阅读器的识别效率.     

LRST：低冗余搜索树防碰撞算法

针对RFID标签防碰撞树型算法在识别过程中因询问命令过多、过长而产生大量冗余数据导致通信开销过大的问题,在后退式动态搜索树算法的基础上提出一种低冗余搜索树防碰撞算法（LRST）：为减少询问次数,提出了“一问两答”询问方式,即碰撞标签根据最高碰撞位比特分别在第一个时隙或第二个时隙响应;为减小询问命令的长度,用计数器替代标签中的前缀匹配电路,使算法不再需要前缀作为询问命令的标识参数;此外,提出的预测识别和标签屏蔽机制可节省不必要的询问。理论分析和仿真结果表明,通信开销大大降低。     

射频识别系统的防冲突算法改进与实现

在射频识别系统中.须采取有效的防冲突算法解决多个标签与阅读器数据交换时引起的数据冲突问题.在对ALOHA算法和二进制算搜索法进行分析的基础上提出一种新的防冲突算法.该算法采取动态互补的二进制树形搜索法,充分利用已得到的冲突信息.有效减小了判决过程中数据的传输量.提高了标签的识别效率.仿真结果表明,改进后的算法可有效解决标签间的冲突.     

一种减少通信复杂度的RFID搜索树防碰撞算法

针对射频识别搜索树防碰撞算法中通信数据量大、识别时延长等问题,提出了一种减少通信复杂度的防碰撞算法.在标签中引入前缀长度寄存器和响应标志寄存器,在阅读器堆栈区存储前缀个数信息,阅读器通过发送前缀长度信息,对标签进行分类搜索,阅读器和标签不再发送对方已经识别的序列号,有效减少了通信数据量.仿真结果表明,与传统的二叉树搜索防碰撞算法相比,该算法可明显减少系统通信复杂度,提高标签的搜索速率.     

基于二叉树的RFID防碰撞算法的研究

在二叉树算法的基础上提出了锁位后退防碰撞(BLBO)算法,增加了锁位寻呼指令,阅读器根据译码结果判断发生碰撞的比特,发送锁位寻呼指令锁定发生碰撞的比特,寻呼过程采用后退策略,每次识别一个标签之后返回到上一个发生碰撞的节点.算法充分考虑了阅读器寻呼次数、传输时延、标签能耗以及吞吐量4个重要性能指标,仿真结果表明,BLBO防碰撞算法较其他二叉树算法性能有明显提高,更适用于RFID防碰撞协议.     

基于位判别的后退式搜索防碰撞算法

在射频识别(RFID)系统中,经常出现多个标签同时向阅读器传递信息,进而相互干扰导致阅读器无法正确识别标签的碰撞现象。针对这一问题,提出了一种基于位判别的后退式二进制搜索防碰撞算法。该算法在传统后退式二进制搜索算法的基础上进行了改进,提出了碰撞距离的概念,通过对碰撞距离的判别来确定搜索的方式。实验结果表明,改进算法的性能比其他几种算法有所提高,传送数据量降低了很多。该算法可以有效的减少传输数据量,提高识别速率。     

一种改进的信息位编码自适应搜索防碰撞算法

在信息位编码自适应搜索防碰撞算法的基础上,通过改进碰撞位信息查询方法,提出了一种改进型信息位编码自适应搜索防碰撞算法。通过信息位编码避免了空闲时隙,在多叉树搜索的同时对多个碰撞位进行编码查询,避免了碰撞位信息附加查询时隙。根据碰撞位的个数和最高碰撞位的位置信息,阅读器自适应地选择对标签进行信息位编码多叉树搜索或二叉树搜索。仿真结果表明,相对于信息位编码自适应搜索防碰撞算法,新算法的总时隙数减少了17.8%,吞吐率提高了21.5%。     

捕获效应下RFID标签的CATPE防冲突协议

在被动式RFID系统中,当多个标签同时向阅读器发射信号时,捕获效应能使阅读器成功接收其中一个标签信号。为提高捕获效应下的识别效率,本文提出一种名为CATPE (capture-aware and tag-population estimation)的RFID标签防冲突协议。该协议可同时估计标签数和捕获效应的发生概率,并在非等长时隙下设置最优帧长。CATPE协议的优点在于不需搜索极值,仅一步计算就能完成估计,从而降低了计算复杂度。计算机仿真显示,该协议与已有协议的识别效率相近,但计算复杂度得到了降低。     

基于分组动态帧时隙ALOHA防碰撞算法研究

为解决射频识别系统中多标签防碰撞问题,在现有ALOHA算法的基础上提出了一种改进的分组动态帧时隙ALOHA算法。当大量标签同时进入阅读器识别范围内时,算法通过设置一个阈值把要响应的标签分成两组,符合条件的一组去响应阅读器,不符合条件的暂时不响应,该算法通过分组限制响应标签数量达到较高的识别效率。仿真结果表明,该算法在标签数大于256甚至更多时识别效率也能维持在相对较高的数值。     

多比特增量-总和调制器中的降噪环路

在单级多比特增量-总和调制器中,量化器的规模是与其比特数成指数增长的,当比特数增加时,量化器会很快变得难以实现.本文提出了一种新结构:降噪环路(Noise-Reducing Loop),能够利用较少比特的量化器获得较多比特量化器的效果,在获得高信噪比的同时,大大地减小了电路规模.在此基础上应用动态量化(Dynamic Quantization)算法,可以使调制器在很宽的工作范围内具有较高的性能.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.