一种基于非均匀分段线性插值的直接数字频率合成器

提出了一种基于非均匀分段线性插值的直接数字频率合成器（DDFS）的设计方法．在所设计的DDFS的相位幅度转换模块中．通过对正弦函数的0到π/2段进行非均匀分段，然后在每一段中采用线性插值近似实现．采用此方法。在八分段、十四分段情况下DDFS的无杂散动态范围（SFDR）值分别达到64．7dB、73．3dB。     

基于行列不同插值算法的图像缩放引擎的设计

为了降低定标器的硬件复杂度并提高液晶显示图像的质量,提出了一种行列采用不同插值算法的图像缩放引擎设计方法.在论述四点三次卷积插值算法和线性插值算法基础上,提出了行列不同计算点数的缩放引擎系统架构.在该架构中,水平缩放采用四点三次卷积插值算法,而垂直缩放采用优化的两点线性插值算法.相比双三次插值算法的实现,减少了9个乘法器的使用,明显节省了实现电路的硬件开销.另外,详细论述了放大单元及相应的滤波器的设计,并将设计结果综合下载到现场可编程门阵列(FPGA)芯片.FPGA验证结果表明,该设计切实可行.     

双线性插值放大算法在视频图像实时放大处理系统中的应用

文章设计并实现了基于FPGA的视频图像实时双线性插值放大。针对双线性插值算法的特点,对算法的硬件实现框架进行了深入研究,提出了一种合理的双一维线性插值模块框架,完成算法的硬件实现,并将其设计应用在视频图像实时处理系统。仿真结果表明,应用该方法进行插值计算不仅结构简单、实时性好,而且可实现变倍率的视频图像实时放大。     

HMAC􀀁MD5 算􀀂法的硬件实现

信息安全体系中的消息验证是一个非常重要的方面。采用以散列函数为基础的消息验证编码是其中的一种重要方法。现提出了硬件实现一种以MD5算法为基础的消息验证编码（HMAC－MD5）的电路结构。该电路结构通过对MD5核心运算模块的复用，缩小了电路规模，达到了较高的处理速度。用Verilog HDL描述电路结构，并且在FPGA上验证了该结构的正确性。     

基于导频的OFDM系统信道估计算法研究及实现

介绍了基于导频的OFDM系统信道估计方法,对典型估计方法的算法复杂性进行了分析比较,并在此基础上给出了频域导频时域平均信道估计算法的硬件电路FPGA实现方案,对FPGA设计的主要模块进行了详细说明,以Altera的StratixⅡ芯片为平台完成仿真和综合.系统分析和FPGA电路综合结果表明:相比传统的频域信道估计算法,该算法节省资源,更利于硬件实现.     

基于小波变换的QRS波检测算法

针对基于小渡变换的心电信号QRS波的检测算法的计算量较大,硬件不易实现的问题,提出一种FPGA的实现方案.首先分析了利用小波变换检测QRS波群的算法,给出硬件实现方案,该算法由小波变换模块和检测模块两个模块实现.然后选取高端FPGA作为硬件处理平台,给出小波变换模块及波形检测模块具体实现结构.最后在Quartus Ⅱ下进行编译和仿真,完成心电信号检测算法的硬件实现.从综合后的资源占有率上可以看出系统充分利用了FPGA内部丰富的资源,从仿真的结果看出在FPGA系统上准确的检测出了QRS波.     

基于FPGA的数字解扩解调模块设计及实现

提出了一种适用于直扩通信系统的解调解扩模块.分析了该电路的基本原理及其实现技术,详细讨论了各电路模块的设计实现方法,并采用自顶向下和模块化的设计思想,利用Verilog语言,通过仿真和综合,最后在FPGA上硬件实现.给出了电路实现后的仿真结果及RTL图,结果表明该环路性能优良,能够达到项目的设计指标要求,对工程设计有一定的参考价值.     

基于FPGA的IHS和提升小波变换的图像融合实现

在分析IHS和提升小波变换图像融合算法理论的基础上,给出了一种基于FPGA的该图像融合算法的设计实现。该设计首先对IHS变换模块进行了硬件实现构造,然后设计了多级小波提升模块以实现图像融合质量和小波分解层数的合理匹配。实验结果表明,采用本设计方法进行图像融合,误差小、精度高,融合效果优良,能够在FPGA上实现以满足图像实时处理的需求。     

基于FPGA的PCI硬件加解密卡设计

提出一种基于FPGA的PCI硬件加解密卡的设计方案,用硬件加解密取代了传统的软件加解密,将加解密模块和PCI接口模块集成在一个FPGA芯片内实现.分析了PCI加解密卡的软硬件的结构和原理,详细介绍了DESX加解密算法的原理、步骤和硬件实现、PCI接口模块的IP核设计以及USB接口模块的电路连接.系统硬件以FPGA为核心,使用Quartus Ⅱ 7.2软件和VHDL语言设计,软件由DriverStudio 2.7和Visual C++6.0设计.采用192位密钥的DESX分组对称加解密算法来取代64位DES算法,密文和密钥在专用硬件中存储,计算机内只有明文,有效防止黑客攻击,保护数据安全.设计采用逻辑综合式取代时钟驱动级联式来实现DESX算法,使加密一组数据的时间由16个周期缩短为1个周期.     

基于FPGA的Bayer到RGB图像格式转换设计

利用FPGA处理数据量大、处理速度快,结合CMOS图像传感器MT9M001和BayerCFA格式图像的特点,设计一种基于FPGA的图像数据转换处理系统,提出用硬件实现Bayer格式到RGB格式转换的设计方案,研究CFA图像插值算法,实现基于FPGA的实时线性插值算法,对Bayer图像格式进行插值恢复全彩色图像,实现从黑白图像还原高清彩色图像。整个设计模块能够满足高帧率和高清晰的实时图像处理,占用系统资源很少,用较少的时间完成了图像数据的转换,提高了效率。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its