Synthesis and characterization of Sb-doped SnO2-（CeO2-TiO2） composite thin films deposited on glass substrates for antistatic electricity and UV-shielding

Sb-doped SnO2(ATO)-(CeO2-TiO2) thin Films were deposited on glass substrates using the mixed solution including CeO2-TiO2 precursor and ATO particles by sol-gel dip coating process.ATO particles were prepared using low-temperature hydrothermal process.The mixed molar ratio of ATO to(CeO2-TiO2) vs the properties of CeO2-TiO2 thin film was investigated.The optical properties of the films were characterized by UV-visible transmission and infrared reflection spectra,the sheet resistance of ATO particles and films were measured by rubber sheeter(MYI-50) and four-point probe(HisuperGroup Inc,SDY-5),the surface morphology and structure of the films were analyzed using 3D Digitale Mikroskop and X-ray diffraction(XRD),respectively.The results showed that the ATO precursor solution lost weight completely at about 500 oC,and the ATO particles was obtained,which indicated the same rutile lattice structure as SnO2.The glass substrates coated with ATO-(CeO2-TiO2) thin films showed better properties in antistatic electricity(104-106 Ω/),shielding UV(almost 100%),visible light transmission(70%) and infrared reflection(>30%).     

纳米TiO2薄膜的制备及自清洁性能研究

通过溶胶一凝胶法在普通钠钙玻璃表面制备均匀透明的纳米TiO2自清洁薄膜。探讨了薄膜制备的工艺条件，并利用X射线衍射（XRD）、紫外分光光度计对薄膜的晶型、晶粒大小和透光率进行了表征，研究了在紫外光照射下薄膜的光催化性能及亲水性能。结果表明，制得的TiO2薄膜具有较强的自清洁性能。     

CeO2掺杂对HfO2栅介质电学特性的影响

采用磁控共溅射的方法在p-Si(100)衬底上沉积了掺杂和不掺杂CeO2的HfO2薄膜。通过X射线光电子能谱(XPS)研究了薄膜中元素的化学计量比及结合能,制备MOS结构并对漏电流及电容等电学性能进行表征。结果表明,掺入CeO2后,整个体系的氧空位生成能增大,氧空位数目减少,漏电流较纯HfO2下降了一个数量级,满足作为高k材料的要求。     

Synthesis and characterization of Sb-doped SnO2-(CeO2-TiO2) composite thin films deposited on glass substrates for antistatic electricity and UV-shielding

Sb-doped SnO₂ (ATO)-(CeO₂-TiO₂) thin Films were deposited on glass substrates using the mixed solution including CeO₂-TiO₂ precursor and ATO particles by sol-gel dip coating process. ATO particles were prepared using low-temperature hydrothermal process. The mixed molar ratio of ATO to (CeO₂-TiO₂) vs the properties of CeO₂-TiO₂ thin film was investigated. The optical properties of the films were characterized by UV-visible transmission and infrared reflection spectra, the sheet resistance of ATO particles and films were measured by rubber sheeter (MYI-50) and four-point probe (HisuperGroup Inc, SDY-5), the surface morphology and structure of the films were analyzed using 3D Digitale Mikroskop and X-ray diffraction (XRD), respectively. The results showed that the ATO precursor solution lost weight completely at about 500 °C, and the ATO particles was obtained, which indicated the same rutile lattice structure as SnO₂. The glass substrates coated with ATO-(CeO₂-TiO₂) thin films showed better properties in antistatic electricity (10⁴-10⁶ Ω/?), shielding UV (almost 100%), visible light transmission (70%) and infrared reflection (>30%).     

Si(100)衬底上CeO2薄膜的脉冲激光制备及性能研究

用CeO2陶瓷靶材,使用脉冲激光沉积(PLD)技术在Si(100)衬底上制备了CeO2薄膜.研究了衬底温度、沉积氧压对薄膜性能的影响,实验制备出了高度(111)取向的CeO2薄膜.使用X射线衍射(XRD)、反射式高能电子衍射(RHEED)对薄膜进行晶体结构的表征.结果表明:随着衬底温度的增加,薄膜中的残余宏观应力(拉应力)及微观应力逐渐减小,薄膜结晶质量不断提高,而沉积氧压对此影响较小.RHEED图像显示使用PLD方法在Si衬底上沉积的薄膜具备较高的结晶性及原子级平整的表面.使用原子力显微镜(AFM)对样品进行表面粗糙度分析,发现不同温度下生长的薄膜均具有光滑的表面,方均根粗糙度(RMS)均在0.4 nm以下.使用Keithley 4200半导体测试仪、椭偏仪对薄膜进行电性能及光学性能分析,发现衬底温度对薄膜的电学性能有显著影响,并且CeO2薄膜结晶状态与电学性能有直接的联系.     

超声场作用下薄膜型WO3-TiO2光催化剂制备与性能表征

在超声场作用下采用溶胶-凝胶法制备了纳米WO3-TiO2复合光催化剂。利用薄膜对罗丹明B溶液的光催化降解作用，考察了钨酸铵掺杂量、镀膜层数、烧结温度、烧结时间、基质、pH值、溶解氧及超声波等因素对光催化活性的影响，并与普通溶胶-凝胶法进行了比较。结果表明，在超声场作用下，溶胶的胶凝时间显著缩短，光催化剂颗粒粒径明显减小，催化活性显著提高，当钨酸铵掺杂量为0．5％（质量分数）、多孔钛片为基质、镀膜9层、575℃下烧结1h得到的WO3-TiO2薄膜的光催化活性最高。该温度下制备的WO3-TiO2薄膜几乎均为金红石型TiO2。     

CeO2-TiO2/SiO2 Anti-Reflecting and UV-Shielding Double-Functional Films Coated on Glass Substrates Using Sol-Gel Method

CeO₂-TiO₂/SiO₂ double-layered films were coated on glass substrates using sol-gel method. The films, formed using spin-coating process, had two optical properties at the same time, anti-reflection in visible region and ultraviolet rays (UV) shielding. The films could be used as museum windows, commercial high-resolution displays and so on. These films were composed of CeO₂ and TiO₂ with molar ratio of 50 to 50 in the first layer and silica matrix in the 2nd layer. Furthermore, the 2nd layer was composed of porous silica films, which showed a lower refractive index, reducing the reflectance significantly in visible wavelength region. The reflectance of the films in visible region between 400 × 700 nm was lower than 2%, and almost 100% UV was shielded. The surface roughness of the films was observed through an atomic force microscope, a depth composition profile of the double layered film was measured with an X-ray photoelectron spectrometer (XPS).     

Photoluminescent properties of Ca2RE8(SiO4)6O2:A (RE=Y, Gd; A=Pb2+, Mn2+) phosphor films prepared by sol-gel process

Ca2RE8(SiO4)6O2:A (RE=Y, Gd; A=Pb2 , Mn2 ) phosphor films were dip-coated on quartz glass substrates through the sol-gel process. X-ray diffraction (XRD), photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. Under short wavelength UV excitation, the film showed a red emission with medium intensity. The decay curve of Mn2 luminescence in Ca2Gd8(SiO4)6O2:Pb Mn film could be fitted into a single exponential function. The lifetime of Mn2 was 10.21 ms in Ca2Gd8(SiO4)6O2.     

Growth of CeO2, Y2O3 Buffer Layers for YBCO Coated Conductor

The liquid citrate method was used to synthesize perovskite-type SrCe0.9 Y0.1O3-α powder. SrCe09Y01O3-α membranes were prepared from the powder by sintering at 1450℃ for 10 h. The reactions in the process of the heat treatment were studied by XRD and DSC/TG. The microstructure of the powder and the membrane was observed by SEM. The results indicate that the perovskite-type SrCe0.9Y0.1 O3-α can be synthesized at 1100℃. The particle size of the synthesized SrCe0.9Y0.1O3-α powder is less than 1μm. The powder can be densified at 1450℃.     

厚度对室温沉积ZnO:Al薄膜光电特性的影响

利用直流磁控溅射法, 在室温玻璃衬底上制备了具有良好附着性的多晶ZnO∶ Al(ZAO)薄膜. 比较了室温下获得的薄膜与衬底加热条件下所得薄膜的结晶程度, 研究了厚度对室温条件下制备的ZAO薄膜表面形貌、电学性能及紫外-可见-近红外光区透光性的影响. 结果表明, 室温条件下制备的ZAO薄膜也具有(002)面择优取向, 随着膜厚的增加薄膜晶粒化程度提高, 载流子浓度和迁移率增大, 电阻率下降, 薄膜在紫外光区的吸收边发生红移, 在可见光区的平均透过率降低, 在近红外光区的透过率随厚度的增加而减小. 厚度为1200 nm的ZAO薄膜具有最佳光电综合性能, 其电阻率为7.315×10~(-4) Ω·cm, 方块电阻为6.1 Ω/□, 可见光区平均透过率达到82%, 波长为550 nm处的透过率为87%.     

Preparation of Ce4+, Sb3+-Codoped TiO2 Films in Electric Field Heating-Treatment

Titania is an important catalytic material for photo-catalytic applications, and the sol-gel process is one of the most appropriate technologies to prepare TiO2 thin films. In the present paper, the Ce4 , Sb3 -codoped TiO2 films were prepared by sol-gel method, which were heat-treated with an applied electric filed. The phase transformation behavior of Ce4 , Sb3 -codoped TiO2 film in the electric field heating-treatment was studied by XRD and AFM. It is found that the crystals were homogeneous and the average crystal size was about 60 nm. Studies of photo-catalytic degradation show that the photo-catalytic activity of Ce4 , Sb3 -codoped TiO2 films heated to 500 ℃ in an applied electric field was higher.     

添加Fe、Sn对氧化铈防紫外膜性能的影响

采用交叉镀膜的方法制备了玻璃基氧化铈防紫外膜,研究添加Fe、Sn对氧化铈薄膜表面、耐酸性以及可见光紫外线透过率的影响。结果表明,在CeO2溶胶掺杂Fe、Sn,随着添加量的增加,可见光区透过率相差不大,紫外光透过率降低,铁的最佳添加量为1%,锡的最佳添加量为3%,且两种掺杂耐酸性较好。     

Fe离子注入二氧化钛复合薄膜制备及光吸收性能研究

采用溶胶凝胶法在石英基体上制备了纯TiO2薄膜,并通过离子注入方法对TiO2薄膜进行Fe掺杂改性以促进TiO2薄膜光吸收边红移,提高其光吸收性能。利用XRD、XPS及UV-vis对不同注入剂量的Fe掺杂TiO2复合薄膜的晶相结构、原子化学态以及光吸收性能进行了表征。XRD测试结果表明,溶胶凝胶法制得的TiO2薄膜为锐钛矿相,经Fe离子注入后,复合TiO2薄膜经退火后锐钛矿相消失,金红石相出现,因为Fe3+离子进入晶胞代替Ti4+,在TiO2基体形成铁的固溶体,结果氧空缺形成促进了TiO2从锐钛矿向金红石的转变;XPS测试结果表明,经过退火Fe在复合TiO2薄膜中以Fe和Fe3O4形式存在,说明Fe离子进入TiO2晶格取代Ti,但Fe及其氧化物晶体峰未在XRD上观测到,说明两者结晶程度不高,以非晶形态存在;通过对溶胶凝胶法制备的TiO2薄膜注入不同剂量Fe的复合薄膜的紫外-可见吸收光谱分析可知,由于复合薄膜中Fe3O4的存在,使复合薄膜紫外-可见光吸收边发生了红移,并随注入剂量增加红移增大,根据红移效果确定Fe的适宜注入剂量为1×1017 cm-2。     

射频磁控溅射法制备Ti掺杂ITO薄膜的厚度对膜结构与光电性能的影响

利用Ti掺杂ITO靶材,采用单靶磁控溅射法在玻璃基底上制备厚度为50~300 nm的ITO:Ti薄膜。借助X射线衍射(XRD)、原子力显微镜(AFM)、可见光分光光度计、霍尔测试系统和四探针电阻测量仪,研究薄膜厚度对薄膜的晶体结构、表面形貌和光电性能的影响。结果表明:ITO:Ti薄膜呈现(400)择优取向,随薄膜厚度增加,薄膜的结晶程度增强,晶粒度增大,薄膜更致密。随薄膜厚度增加,薄膜的均方根粗糙度和平均粗糙度以及电阻率都先减小再增加,薄膜厚度为250 nm时,表面粗糙度最小,蒋膜厚度为200 nm时,电阻率最低,为2.1×10-3?·cm。不同厚度的薄膜对可见光区的平均透过率都在89%以上。     

AZO透明导电膜电磁散射光电参数影响试验

采用常温镀膜技术在浮法玻璃表面沉积了不同方块电阻的氧化锌铝(Al-doped zinc oxide,AZO)透明导电膜,建立了透明导电膜的雷达散射截面(radar cross section,RCS)测试和研究方法;提出了基于雷达散射截面均值的相对反射率概念,结合方块电阻和可见光透过率综合分析了氧化锌铝透明导电膜的电磁散射特性.在微波暗室对不同方块电阻的氧化锌铝透明导电膜进行了测试,得到了10 GHz和15 GHz入射频率,水平(horizontal horizontal,HH)、垂直(vertical vertical,VV)极化的雷达散射截面曲线;从飞行器座舱隐身角度出发,研究了前向20°和60°角域雷达散射截面曲线分布特点,并分析了雷达散射截面均值影响特性;基于氧化锌铝透明导电膜雷达散射截面测试结果,研究了方块电阻对雷达散射截面相对反射率和可见光透过率的影响规律.研究表明,方块电阻较低时雷达散射截面曲线分布特性与对应金属相似,方块电阻增大时,前向两个角域内的RCS均值减小,隐身性能减弱,雷达散射截面相对反射率降低而可见光透过率增加,相对反射率降低速率大小与方块电阻相关,合适的方块电阻可同时满足隐身及采光需求.暗室测试结果表明,在满足座舱可见光透过率前提下,氧化锌铝透明导电膜方块电阻为18~45 Ω时,具有外形隐身作用,方块电阻18 Ω为最优,对应RCS相对反射率Re_m2和Re_dB分别为84%和0.73 dB.      

Structure and Properties of TiO2-CeO2 Films Deposited on Soda-Lime Silicate Glass Substrates by R.F.Magnetron Sputtering

TiO2-CeO2 films were deposited on soda-lime glass substrates at different ratio of O2 to Ar (0.10, 0.15,0.20) by R. F. magnetron sputtering. The structure, surface composition, UV-visible spectrum of the films were measured by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and spectrometer. The results show that the films are amorphous, and the relative molar ratio of Ce to Ti is higher than that of the target at lower ratio of O2 to Ar. Only tetravalent Ti 4 and Ce 4 ions are present in the films, and the obtained TiO2 -CeO2 films appear good uniformity and high density. The films deposited on the glass can shield ultraviolet light without significant absorption of visible light.     

石墨烯掺杂氧化锡薄膜的结构与光学性能的研究

以SnCl₄·5H₂O和石墨烯为原料,采用溶胶-凝胶法在石英玻璃衬底上制备了SnO₂掺杂石墨烯的薄膜,研究了膜层厚度对SnO₂薄膜的结构与光学性能的影响.测试结果表明,石墨烯的掺入使氧化锡薄膜的晶体质量得到提高, 薄膜样品的光学带边往长波方向发生移动,即产生“红移”现象,随着石墨烯含量的增加,氧化锡薄膜光致发光强度表现为逐步淬灭的现象.      

Growth and Magnetic Properties of Sol-Gel Derived Co-Doped ZnO Thin Film

Zn1-xCoxO films were grown on glass by sol-gel spin coating process. A homogeneous and stable Zn1-xCoxO sol was prepared by dissolving zinc acetate dihydrate, cobalt acetate tetrahydrate and aluminium chloride hexahydrate as solutes in solution of isopropanol and monoethanolamine. The films were postheated and vacuum annealed, and investigated for c-axis preferred orientation and electromagnetic properties. Zn1-xCoxO films with different Co concentrations were oriented well along the c-axis, especially the Zn1-xCoxO film with 10% Co(atom fraction) was highly c-axis oriented. The transmittance spectra show that Zn1-xCoxO films occur d-d transition and sp-d exchange interaction between Co2 ions. The electrical resistivity of the films at 10% Co had the lowest value because the crystallite size became largest and the crystallinity of the c-axis was improved. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetism at room temperature appeared. The characteristics of the electrical resistivity and room temperature ferromagnetism of sol-gel derived Zn1-xCoxO films suggest a potential application of dilute magnetic semiconductor devices.     

High quality thin film phosphors of Y2O3:Eu3+ deposited via chemical bath deposition

High transparency in visible region was required for red-light-emitting Y2O3:Eu3+ thin film phosphors. Such films were obtained via chemical bath deposition on bare SiO2 glass substrates through heterogeneous nucleation with further heat treatment. Thin amorphous yttrium basic carbonate films could be completely transformed to crystalline Y2O3 at 650 °C. X-ray diffraction and field-emission scanning electron microscopy were used to characterize these products. The deposition temperature and the post-anneali...     

稀土-硼共渗预处理对YG6表面金刚石薄膜质量的影响

分别对YG6(WC-wt.6%.Co)硬质合金基体表面进行常规固态渗硼和固态稀土(CeO2)共渗处理,再以甲烷和氢气为反应气体,采用热丝化学气相沉积法在合金基体表面沉积金刚石膜,通过调控灯丝功率和进气总流量制备微米晶或纳米晶金刚石膜。利用场发射扫描电镜、X射线衍射仪、激光拉曼光谱仪和洛氏硬度计对渗硼基体和金刚石膜进行检测分析,研究YG6硬质合金基体稀土硼共渗与常规固态渗硼处理对微米晶金刚石膜与纳米晶金刚石膜的物相组成、结构形貌和附着性能的影响。结果表明,与常规固态渗硼处理相比,稀土(CeO2)硼共渗样品表面残留物较少,沉积的金刚石膜样品表面粗糙度低,在1 000 N载荷下薄膜无剥落现象,表现出较好的附着性能;纳米晶金刚石膜的生长速率低于微米晶金刚石膜,但其附着性能明显优于微米晶金刚石膜。