Dispersive optical constants and electrical properties of nanocrystalline CuInS2 thin films prepared by chemical spray pyrolysis

Nanocrystalline CuInS₂ thin films were deposited on borosilicate glass substrates via chemical spray pyrolysis method. The structural, morphological, optical, and electrical properties were studied as a function of increasing annealing temperature from 250 to 350 ̊C. XRD analysis showed mixed phases at lower temperatures with the preferred orientation shifting towards the (112) chalcopyrite CuInS₂ plane at higher substrate temperature. The crystallite size increased slightly between 13 and 18 nm with increase in annealing temperature. The optical band gap was determined on basis of Tauc extrapolation method and the Wemple–Di-Domenico single oscillator model. Possible structural and quantum confinement effect may have resulted in relatively larger band gaps of 1.67–2.04 eV, relative to the bulk value of 1.5 eV. The presence of Cu_xS in the as-deposited and wurtzite peaks after annealing at 350 ^̊C play a role in influencing the optical and electrical properties of CuInS₂ thin films.     

Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200 °C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49 nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10⁻³ Ω cm.     

脉冲准分子激光扫描沉积(PLD)高c轴取向V2O5/Si薄膜及结构分析

采用脉冲准分子激光大面积扫描沉积技术,在Si(111)单晶衬底上沉积了多晶V2O5薄膜,经300℃以上退火处理得到了具有高c-轴取向生长的V2O5膜。300℃以上热退火处理的薄膜表面具有正常的化学计量比（无氧缺位）,晶粒间界明显,晶粒呈针棒状,晶粒尺寸在100－200nm之间。采用X射线衍射（XRD）、Raman光谱（RS）、Fourier红外光谱（FT－IR）及透射电镜扫描附件（STEM）对沉积及不同温度下退火处理的样品进行了结构分析。研究结果表明：V2O5/Si薄膜经400℃热处理后表面部分处于低价态的钒离子已被氧化为V2O5。     

Single step electrosynthesis of Cu2ZnSnS4 (CZTS) thin films for solar cell application

The Cu₂ZnSnS₄ (CZTS) thin films have been electrodeposited onto the Mo coated and ITO glass substrates, in potentiostatic mode at room temperature. The deposition mechanism of the CZTS thin film has been studied using electrochemical techniques like cyclic voltammetery. For the synthesis of these CZTS films, tri-sodium citrate and tartaric acid were used as complexing agents in precursor solution. The structural, morphological, compositional, and optical properties of the CZTS thin films have been studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), EDAX and optical absorption techniques respectively. These properties are found to be strongly dependent on the post-annealing treatment. The polycrystalline CZTS thin films with kieserite crystal structure have been obtained after annealing as-deposited thin films at 550 in Ar atmosphere for 1 h. The electrosynthesized CZTS film exhibits a quite smooth, uniform and dense topography. EDAX study reveals that the deposited thin films are nearly stoichiometric. The direct band gap energy for the CZTS thin films is found to be about 1.50 eV. The photoelectrochemical (PEC) characterization showed that the annealed CZTS thin films are photoactive.     

Effect of pH on the structural,optical and nanomechanical properties of CdS thin films grown by chemical bath deposition

CdS nano-structured thin films were prepared on glass substrates with chemical bath deposition technique for different pH values. The effects of pH and annealing on the structural, optical and nanomechanical properties of CdS films were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis spectrophotometer and nanoindentation techniques. The results of XRD analysis and SEM investigation reveal that both different pH values of the bath solution and annealing affect the crystal structure and the surface morphology of the films markedly. Also, the results of the optical absorption show that the E_g values of the films decrease with increasing pH values. In this kind of study the mechanical properties of the CdS thin films determined using nanoindentation tests are being reported here for the first time. Nanoindentation experimental results show that nanohardness and elastic modulus values exhibit a peak load dependence. Our results reveal that, the annealing of CdS films at 300 °C results in slow and normal grain coarsening. The slow grain growth also influences the lattice strain (microstrain) which effects nanohardness and elastic modulus. The results also indicate that there is a direct dependence of the physical and optical properties of the CdS films on pH and annealing process.     

The ultraviolet emission mechanism of ZnO thin film fabricated by sol–gel technology

ZnO thin films were successfully deposited on SiO₂/Si substrate by sol–gel technology. The as-grown ZnO thin films were annealed under an ambient atmosphere from 600 to 900 °C by rapid thermal annealing (RTA) process. X-ray diffraction and scanning electron microscopy analyses reveal the physical structures of ZnO thin films. From PL measurement, two ultraviolet (UV) luminescence bands were obtained at 375 and 380 nm, and the intensity became stronger when the annealing temperature was increased. The strongest UV light emission appeared at annealing temperature of 900 °C. The chemical bonding state in ZnO films was investigated by using X-ray photoelectron spectrum. The mechanism of UV emission was also discussed.     

Influences of annealing temperature on anti-reflective performance of amorphous Ta2O5 thin films

Influences of thermal annealing on structural, optical and morphological properties of the tantalum pentoxide (Ta₂O₅) thin films were investigated and anti-reflective performances were discussed in detail. The Ta₂O₅ thin films were deposited onto Corning Glass (CG), Si, GaAs and Ge substrates by radio-frequency (RF) magnetron sputtering technique using Ta₂O₅ ceramic target. The obtained secondary ion mass spectroscopy (SIMS) analysis results showed that uniform Ta and O distribution have formed throughout depth of the films deposited on substrates. The X-Ray diffraction (XRD) results indicated that the annealed Ta₂O₅ thin films at 100, 200, 300 and 500?°C have exhibited amorphous (a-Ta₂O₅) characteristic. The increased temperature has resulted in increasing the surface roughness from 0.67 to 1.60?nm. The optical transmittance of the annealed thin films has increased from 70.85 to 80.32% with increasing temperature. Spectroscopic ellipsometer (SE) measurement results demonstrated that the increased temperature has increased the refractive index of the Ta₂O₅ thin film from 2.11 to 2.18. The Ta₂O₅ thin film has reduced the average optical reflectivity of the Si, GaAs and Ge substrates by 78, 55 and 70%, respectively. In addition, thermal annealing process has decreased the optical reflectivity of the film. The obtained experimental results showed that single-layer Ta₂O₅ thin films can be used as anti-reflective layer in optical and optoelectronic applications. The best optical transmittance and anti-reflective performance were obtained at the annealing temperature of 500?°C.     

Enhanced conductance properties of UV laser/RTA annealed Al-doped ZnO thin films

Thin films comprising 0.5 mol% aluminum-doped zinc oxide (AZO) were prepared on glass substrates by a spin-coating method for transparent conducting oxide (TCO) applications. UV laser was selected for the annealing of AZO thin films, due to the well matched energy bandgap between UV laser and AZO films. After the rapid thermal annealing (RTA) process, post UV laser annealing was carried out by varying the scan speed of the laser beam, and the effects of laser annealing on the structural, morphological, electrical, and optical properties were analyzed. The results indicated that UV laser annealing based on various scan speeds affects the microstructure, sheet resistance, and optical transmittance of the AZO thin films, compared with those of the only RTA processed thin films. X-ray diffraction (XRD) analysis showed that all films that preferentially grew normally on the substrate had a (002) peak. The optical transmittance spectra of the laser/RTA annealed AZO thin films exhibited greater than 83% transmittance in the visible region. Also, the sheet resistance (1.61 kΩ/sq) indicated that optimized UV laser annealing after the RTA process improves film conductance.     

Impact on nonlinear/linear optical and structural parameters in quaternary In15Ag10S15Se60 thin films upon annealing at different temperatures

In the present study, the effect of thermal annealing on structural, linear, and nonlinear optical properties of quaternary chalcogenide In₁₅Ag₁₀S₁₅Se₆₀ thin film has been reported. The bulk sample synthesized by the melt quenching technique was used for the thin film preparation by the thermal evaporation method. Post deposition, the thin films were annealed at different temperatures like 100 °C, 150 °C, 200 °C, and 250 °C for 2 hs. X-ray diffraction (XRD) and Raman spectroscopy were used for structural studies, which showed the increase in crystalline phases with the increase of annealing temperature. The morphological images taken by field emission scanning electron microscope (FESEM) showed the densification and enlargement of scattered grains for annealed films. Furthermore, the constituent elements and their percentage in the sample were confirmed by Energy dispersive X-ray analysis (EDX). The linear and nonlinear optical parameters were calculated from the transmittance data obtained from UV–Vis spectroscopy in the wavelength range of 600–1100 nm. There is a large reduction in third-order nonlinear susceptibility at the higher annealing temperature. Subsequently, the transmission increased, whereas the absorption decreased with the annealing temperature. The extinction coefficient decreased while there was an increase in optical bandgap for the annealed films due to the decrease in surface defects and disorder, which forms the localized states in the bandgap. The oscillator energy, dispersion energy, dielectric constant, optical conductivity were calculated and discussed in detail. The change in both linear and nonlinear parameters by thermal annealing could be useful for controlling the optical properties of In₁₅Ag₁₀S₁₅Se₆₀ thin film, which could be the preferable candidate for numerous photonic applications.     

Annealing effects on the structure and hardness of helium-irradiated Cr2AlC thin films

Cr₂AlC MAX phase thin films prepared by radio-frequency magnetron sputtering were irradiated at room temperature by 100 keV helium ions to a fluence of 1 × 10¹⁷ ions cm⁻². The effects of thermal annealing on the structural and mechanical properties of the helium-irradiated Cr₂AlC films as well as the helium release were investigated by grazing-incidence X-ray diffraction (GIXRD), Raman spectroscopy, and scanning electron microscope (SEM) in combination with nano-indentation and elastic recoil detection (ERD) analysis. The irradiation-induced structural damage in the Cr₂AlC is significantly recovered by thermal annealing at temperatures around 600℃, attributed to high defect diffusivity. After annealing to 750℃, the hardness of irradiated films recovered almost completely, which is ascribes to both defect recombination and reformation of damaged chemical bonds. Substantial helium release occurring at this annealing temperature is closely related to the damage recovery due to helium irradiation.     

Effect of Ar:N2 flow rate on morphology,optical and electrical properties of CCTO thin films deposited by RF magnetron sputtering

Calcium copper titanate (CCTO) thin films were deposited on indium tin oxide (ITO) substrates using radio frequency (RF) magnetron sputtering, at selected Ar:N₂ flow rates (1:1, 1:2, 1:4, and 1:6 sccm) at ambient temperature. The effect of Ar:N₂ flow rate on the morphology, optical and electrical properties of the CCTO thin films were investigated using FESEM, XRD, AFM, Hall effect measurement, and UV–Vis spectroscopy. It was confirmed by XRD analysis that the thin films were produced is CCTO with cubic crystal structure. As the flow rate of Ar:N₂ increased up to 1:6 sccm, the thin film thickness reduced from 87 nm to 35 nm while the crystallite size of CCTO thin film decreased from 27 nm to 20 nm. Consequently, the surface roughness of thin film was halved from 8.74 nm to 4.02 nm. In addition, the CCTO thin films deposited at the highest Ar:N₂ flow rate studied, at 1:6 sccm; are having the highest sheet resistivity (13.27 Ω/sq) and the largest optical energy bandgap (3.68 eV). The results articulate that Ar:N₂ flow rate was one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties and optical properties of CCTO thin films.     

Effect of different post-annealing durations on electromagnetic properties of La0.67Ca0.33MnO3:Ag0.2 thin films prepared by pulsed laser deposition

La_0.67Ca_0.33MnO₃:Ag_0.2 thin films were obtained by pulsed laser deposition followed by post-annealing at 1200 °C for varied durations. Surface morphologies, structures, and electrical and magnetic properties of films prepared with different annealing durations were significantly different. X-ray diffraction results showed that annealed films exhibited stronger diffraction peaks and C-axis preferred growth. Regarding their electrical properties, metal-insulator transition temperature (T_MI) and temperature coefficient of resistance (TCR) increased first and then decreased with the increase in annealing duration. In terms of their magnetic properties, thin films displayed ferromagnetic-paramagnetic transition. With the increase in annealing duration, Curie temperature increased first and then decreased. Specifically, the film annealed for 3 h showed excellent electromagnetic properties, with relatively high TCR of 20.3%·K^-1 and near room temperature T_MI of 285.7 °C. Owing to these excellent properties, as-prepared thin films have application potential in infrared detectors.     

Effect of annealing and room temperature sputtering power on optoelectronic properties of pure and Al-doped ZnO thin films

Transparent ZnO and Al-doped ZnO (AZO) thin films have been prepared by radio frequency sputtering deposition at room temperature. The optical, electrical, and structural characteristics of the obtained films have been extensively investigated as a function of sputtering and annealing parameters. Spectrophotometry, X-ray diffraction (XRD), atomic force microscopy (AFM), four-point probe and Hall-effect measurements were employed. The ZnO films generally exhibited excellent crystalline properties, while providing a UV cut-off in the absorption spectrum for optical filtration. AZO thin films exhibited an average transparency (larger than 85%) over the visible region of the spectrum, and resistivity of the order of 10^?3 Ω cm was obtained. The carrier concentration and electron mobility values proved to be dependent on the deposition parameters and annealing temperature. The obtained results showed that annealing temperatures higher than 400 °C were not necessary and potentially degraded the electronic properties of the AZO thin films.     

Effect of annealing temperature on the evolution of structural,microstructural, and optical properties of spin coated ZnO thin films

Zinc oxide (ZnO) thin films were sol-gel spin coated on glass substrates and annealed at various temperatures from 300–500 °C. Zinc acetate dihydrate (ZAD), monoethanolamine (MEA), and 2-methoxyethanol were used as the starting materials, stabilizer and solvent, respectively. The effect of annealing temperature on the structural and optical properties of the ZnO thin films was investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), UV–VIS spectrophotometry and ellipsometry. The XRD results showed the films to have a preferential c-axis orientation, whereas the AFM results confirmed a columnar structure. The surface roughness increased with the increase in annealing temperature. Parameters such as ratio of free charge carrier concentration to effective mass (N/m*) and plasma frequency (ω_p) were determined from the transmittance graph using the Wemple di Domenico model. Both N/m* and ω_p were noticed to reduce with the increase in annealing temperature. Band gap decreased with the increase in the annealing temperature indicating absorption edge shift towards the red region.     

STRUCTURAL AND OPTICAL PROPERTIES OF ZNO THIN FILMS PREPARED BY DIFFERENT SOL-GEL PROCESSES

ZnO thin films were prepared on quartz glass substrates by different sol-gel methods using a spin-coating technique. The structural and optical properties of ZnO thin films were studied by X-ray diffraction (XRD) and transmission spectra analysis. The results show that different factors such as Zn²⁺ concentration, solvent, sol stabilizer, pre-heat treatment temperature, and annealing temperature have a great impact on the structural and optical properties of ZnO thin films.     

In-situ X-ray diffraction studies and magneto-optic Kerr effect on RF sputtered thin films of BaTiO3 and Co,Nb co-doped BaTiO3

The effect of annealing on structural and magnetic properties of the RF sputtered BaTiO₃ and Co, Nb co-doped BaTiO₃ thin films on Si (001) substrates were studied. The structure of the as-deposited (amorphous) films was changed into cubic perovskite phase during the in-situ X-ray diffraction from room temperature to 900 °C. The enhancement of crystalline quality with respect to the increase of annealing temperature was observed by the in-situ XRD. The magnetic properties of the films before and after annealing were studied by the measurement of Magneto-Optic Kerr Effect (MOKE). The pure BaTiO₃ revealed a paramagnetic behavior, whereas the Co and Nb co-doped BaTiO₃ films exhibited room temperature ferromagnetism. The increase in ferromagnetic response was observed in the Co and Nb co-doped BaTiO₃ films annealed at 900 °C rather than the as-deposited film.     

Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se₂ solar cells.     

Optimizing the processing conditions of sodium potassium niobate thin films prepared by sol-gel spin coating technique

In the present study, potassium sodium niobate (KNN) thin films were synthesized by means of sol-gel spin coating method. Along with the synthesis, the effects of annealing temperature and various number of coating layers on both the structural and electrical properties were looked into. The results of the study revealed that the annealing temperature had a great impact on the properties of KNN. In addition, the XRD diffractograms and texture coefficient of the synthesized films confirmed that a highly oriented orthorhombic perovskite structure was obtained at 650 °C, whereas at a relatively higher temperature (700 °C), a spurious phase of K₄Nb₆O₁₇ was evolved. In addition, the growth of KNN at 650 °C exhibited a reasonable resistivity value for piezoelectric applications. Looking into the results, it was discovered that the KNN thin films also found to be dependent on a number of coating layers. Field emission scanning electron microscopy (FESEM) showed that KNN with five coating layers was highly crystalline, cracks-free, and had significantly more homogenous surface morphology and the size of grains being uniform, the resistivity of KNN thin films improved with the increasing number of coating layers i.e., up to five.     

Structural, chemical and electrochemical characterization of poly(3,4-ethylenedioxythiophene) (PEDOT) prepared with various counter-ions and heat treatments

Electrochemical deposition of the conjugated polymer poly(3,4-ethylenedioxythiophene) (PEDOT) forms thin, conductive films that are especially suitable for charge transfer at the tissue-electrode interface of neural implants. For this study, the effects of counter-ion choice and annealing parameters on the electrical and structural properties of PEDOT were investigated. Films were polymerized with various organic and inorganic counter-ions. Studies of crystalline order were conducted via X-ray diffraction (XRD). Electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) were used to investigate the electrical properties of these films. X-ray photoelectron spectroscopy (XPS) was used to investigate surface chemistry of PEDOT films. The results of XRD experiments showed that films polymerized with certain small counter-ions have a regular structure with strong (100) edge-to-edge correlations of PEDOT chains at ∼1.3 nm. After annealing at 170 °C for 1 h, the XRD peaks attributed to PEDOT disappeared. PEDOT polymerized with LiClO₄ as a counter-ion showed improved impedance and charge storage capacity after annealing at 160 °C.     

Effect of sulfur annealing on the morphological,structural, optical and electrical properties of iron pyrite thin films formed from FeS<Subscript>2</Subscript> nano-powder

Iron pyrite (FeS₂) thin films were fabricated by spin coating the solution of FeS₂ nanocrystals of ～40 nm in size on glass substrates, followed by annealing in a sulfur environment at different temperatures. The effect of sulfurization temperature on the morphology, structural, optical and electrical properties was investigated. With increase of the sulfurization temperature, the grain size and crystallinity of the films was improved, although some cracks and voids were observed on the surface of thin films. The band gap of the FeS₂ films was decreased at higher sulfurization temperature. The electrical properties were also changed, including the increasing in resistivity and the decrease in Hall mobility, with increase of sulfurization temperature. The change in the optical and electrical properties of the FeS2 thin films was explained based on the changes of phase, morphology, surface, and grain boundary property.