磁控溅射功率对掺Al氧化锌薄膜特性的影响

利用射频磁控溅射技术在石英玻璃衬底上制备掺Al氧化锌(AZO)薄膜,研究了不同溅射功率(75,120,160,200W)对AZO薄膜的结构、光学和电学特性的影响.结果表明:所制备的AZO薄膜具有良好的c轴择优取向,且随着溅射功率的增加,薄膜的表面颗粒尺寸逐渐增加;薄膜在可见光范围具有较高的透射率,吸收边在350～400...     

La掺杂ZnO和SnO2薄膜的气敏特性

真空蒸发沉积薄膜再经热氧化获得n型掺La的ZnO和SnO2薄膜(玻璃衬底)研究掺La含量与热氧化工艺对薄膜的物相结构、表面形貌和气敏特性的影响.实验给出:掺La使薄膜表面颗粒细化,随La含量增加,ZnO,SnO2薄膜平均晶粒尺寸均增大.掺La可明显降低2种薄膜的气敏工作温度相比之下,掺La对ZnO薄膜的灵敏度改善明显优...     

碳化硅薄膜的ICP浅刻蚀工艺研究

选用SF6/O2 混合气体对等离子体增强化学气相淀积( PECVD)法制备的碳化硅( SiC)薄膜进行了浅槽刻蚀,并通过正交试验设计方法,研究了感应耦合等离子体( ICP)刻蚀技术中反应室压强、偏压射频( BRF)功率、O2 比例三个工艺参数对碳化硅薄膜刻蚀速率的影响及其显著性.实验结果表明:BRF功率对于刻蚀速率的影响具有高度显著性,各因素对刻蚀速率的影响程度依次为BRF功率>反应室压强>O2 比例,并讨论了所选因素对碳化硅薄膜刻蚀速率的影响机理.     

氮化铝陶瓷薄膜热导率的分子动力学模拟

采用平衡分子动力学方法(EMD)研究了平衡温度为300K的氮化铝薄膜的法向热导率.利用Stillinger-Weber势函数以及Green-Kubo线性响应理论计算热导率.计算结果表明,氮化铝薄膜的热导率值显著小于对应大体积材料的实验值,具有明显的尺寸效应.在氮化铝薄膜为1.47～5.39 nm的范围内,氮化铝薄膜的热导率随着薄膜厚度的增加而近似的线性增加.     

磷、镉交互作用对烟草生长及吸收积累磷、镉的影响

采用盆栽实验研究石灰性土壤中磷、镉交互作用对烟草生长的影响,结果表明,磷的添加可减轻镉对烟草的危害。随着向土壤中添加磷浓度的增加,烟草生物量呈增加趋势。而当磷浓度为150mg kg-1时烟草生物量显著增加,地上部分变化比地下部分明显;而烟草中镉的含量呈先下降再增加的趋势。当镉浓度相同条件下,随着向土壤中添加磷浓度的增加,烟草中的镉含量呈现先下降再增加的趋势,高浓度镉尤为明显,在镉浓度为40mg kg-1时最为明显。研究还发现,同一磷浓度下,随着镉浓度的增加植株中磷含量呈逐渐下降趋势,此外,植株中镉含量、磷与土壤环境中磷、镉含量浓度呈显著正相关。     

施加偏压对采用等离子体辅助热丝化学气相沉积法在硬质合金上沉积金刚石/ 碳化硅/ 硅化钴复合薄膜的影响

金刚石涂层硬质合金是一种出众的刀具材料,将碳化硅掺入金刚石涂层中不仅可以提高涂层的断裂韧性,还能够提高薄膜与基体之间的粘附性。文章采用氢气、甲烷和四甲基硅烷混合气体作为反应气体,用直流等离子体辅助热丝化学气相沉积法在硬质合金基体上沉积金刚石-碳化硅-硅化钴复合薄膜。通过扫描电子显微镜、电子探针显微分析、X 射线衍射和拉曼光谱对薄膜的表面形貌、成分以及结构进行了分析,结果显示此复合薄膜中含有金刚石、碳化硅(β-SiC)和硅化钴(Co2Si、CoSi)。复合薄膜的结构和成分可通过调节偏流和气相中四甲基硅烷的浓度来控制,随着偏流的增加,复合薄膜中金刚石晶粒尺寸变大且含量增加,β-SiC 的含量减少,因为复合薄膜沉积过程中正偏压促进金刚石的生长,并且增强金刚石的二次形核。虽然电子轰击同时增强了氢气、甲烷和四甲基硅烷的分解,但随着偏流的增加,气相中产生的碳源浓度高于硅源浓度,使金刚石比β-SiC 在空间生长上更具有优势。当偏流过高时则形成纯金刚石,不能够同时沉积金刚石、β-SiC 和硅化钴三种物质。通过调节偏压和气体成分,金刚石和碳化硅在复合薄膜中的分布得以控制。该工作有助于理解和控制复合材料和超硬薄膜的生长,所产生的复合薄膜可用于提高金刚石涂层刀具切削性能。     

掺钯二氧化锡气敏薄膜的实验研究

XPS分析表明,用直流溅射法制备的掺钯薄膜气敏元件,钯的溅射率比锡高,在薄膜中钯的含量高于靶中的含量、和纯SnO_2薄膜相比,此元件对还原性气体有很高的灵敏度,尤其对H_2和CH_4.对于该元件的气敏机理也作了初步探讨.     

对靶磁控溅射制备VO_x薄膜及其退火研究

利用对靶磁控溅射法在玻璃基片上制备VOx薄膜,采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数(TCR)的影响,得到优化的镀膜工艺参数,主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W,在此基础上,进行不同温度条件的真空退火,得到薄膜TCR在-2.5%~-4.5%范围。利用原子力显微镜(AFM)和X射线光电子能谱法(XPS)分析了退火对提高薄膜TCR的作用,并找出VOx薄膜阻值与TCR的优化组合。同时,还观察到薄膜表面形貌的变化以及退火后薄膜中VO2,V2O3,V2O5的比例变化情况,并对其机理进行解释。     

几何结构对复合薄膜巨磁阻抗效应的影响

复合薄膜的巨磁阻抗(GMI)材料的几何结构改变会对其GMI效应产生影响,实验已证实.但目前对GMI效应的理论尚不完善,缺乏对该现象的理论研究.通过经典电磁理论建立了复合薄膜结构的GMI效应的理论模型,并利用模型仿真不同结构参数下典型三层复合薄膜的GMI特性,系统研究了几何结构对复合薄膜GMI效应的影响,并得到结论:在复合薄膜结构中,存在一个最佳的导电层厚度,使GMI效应达到最强;导电层宽度的增加对GMI效应有增强作用.     

重金属单一污染对龙须草叶绿素含量和抗氧化酶系统的影响

盆栽试验的结果表明:Cd、Pb、Cu、Zn和As单一污染处理时龙须草叶绿素含量随着重金属处理浓度的增加呈现先升后降的趋势,但其总叶绿素含量和叶绿素a/b比值均低于对照;龙须草SOD的活性随着Zn、As单一污染处理浓度增加呈现先升后降的趋势,而随着其它三种重金属处理浓度的增加呈现下降趋势;龙须草CAT和POD的活性随着As处理浓度的增加呈现出上升趋势,而随着其它四种重金属处理浓度的增加呈现先升后降趋势。     

Effect on electrical performance of titanium co‐sputtered IZO active‐channel thin‐film transistor

We investigated the electrical performance of Ti–IZO active‐channel layer thin‐film transistors (TFTs) using a radio frequency (RF) magnetron co‐sputtering system to co‐sputter IZO and Ti targets. The samples were fabricated by changing the RF gun power of the IZO. The other parameters such as the RF gun power of the Ti target, oxygen partial pressure [O₂/(Ar + O₂)], and initial and process pressure of the chamber were unchanged. Unlike the sample sputtered only with IZO, the thin films of the Ti–IZO samples could control the oxygen vacancy because Ti reacts with the oxygen in the IZO. Therefore, Ti–IZO thin films can suppress the carrier concentration and thus have an effect on the electrical performance of TFTs.     

基于环形微热板的ZnO微气体传感器设计

提出一种新型的设有环形结构微热板的硅基ZnO微气体传感器。利用ANSYS软件,将环形电极结构与传统的蛇形结构进行温度分布的模拟仿真,发现该结构能供给传感器更高的温度且中心温度分布均匀,进而解决了现有传感器功耗大的缺点。通过对RF磁控溅射ZnO薄膜的工艺摸索,得出了适宜作气敏薄膜的制备参数。该传感器在250℃下对（200-1000）×10-6CH4气体有很好的响应。     

射频溅射Sn薄膜的工艺研究

采用正交试验方法研究了射频溅射的工艺因素对Ｓｎ膜形成过程的影响,得到了射频溅射制备Ｓｎ膜新工艺的最佳条件。Ｘ－射线衍射及ＳＥＭ实验结果表明在该工艺条件下得到的Ｓｎ膜为非常细小均匀的β－Ｓｎ的晶体结构。     

基于电子印刷工艺的薄膜热电偶研制

薄膜热电偶由于具有体积小、热容量小及响应速度快等优点成为近年来学者们研究的重点。薄膜制备常用的方法有射频溅射法、离子镀膜法以及直流脉冲磁控溅射法等,但这些方法操作设备复杂,制作时间长,效率低,成功率低且复现性差。用电子印刷工艺制备薄膜热电偶,将Au,Pt的溶液化微纳米材料印制在基板上,印刷成为Au-Pt薄膜热电偶,该方法操作方便快捷,对电极材料污染小。通过试验证明:采用电子印刷工艺制备的Au-Pt薄膜热电偶符合Au-Pt热电偶检定规程的要求,热电偶精度高,重复性和一致性好。     

Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature

High mobility and c-axis orientated ZnO thin films were deposited on glass substrates using RF sputtering method at room temperature.Structural properties of ZnO thin films were investigated by X-ray diffraction (XRD).Surface morphology and roughness were studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM).Electrical properties were measured at room temperature using a Hall effect measurement system.The influence of sputtering power on characteristics of ZnO thin films is studied.The results indicate that the sputtering powers have great influence on the crystal quality and mobility of ZnO thin films.By using optimized sputtering conditions,high crystal quality ZnO thin films with Hall mobility of 34 cm 2 /V·s at room temperature were obtained.     

The electrical and optical properties of AZO thin film under different post-annealing temperatures

In this study, the Aluminum element doped zinc oxide (Al:ZnO) thin film was deposited on the Corning glass substrate by RF magnetron sputtering technology and annealing treatment. After sputtering, all thin films are then annealed on nitrogen atmosphere and temperature of 300, 500 and 550 °C, respectively. The structural, electric and optical characteristics were then investigated. All films illustrate strong (002) for ZnO and (335) for Al preferential orientation by using XRD analysis. The lower resistivity can be observed at nitrogen annealing and temperature of 400 °C. The transmittance property of AZO thin film exhibited an excellent transparency in the visible light range. The transmittance reached to nearly 81.4 % for all Al:ZnO film. It can be clearly observed that the grain size of AZO thin film is very uniform by utilizing SEM technology.     

硅基底和金刚石基底上沉积ZnO薄膜工艺研究

采用射频磁控溅射方法分别在硅基底和金刚石基底上制备ZnO薄膜,研究了硅和金刚石衬底的不同对ZnO薄膜生长机理的影响,同时分析了氩氧比和退火温度这两个工艺参数对薄膜的晶格取向和表面形貌的影响。利用XRD和AFM对ZnO压电薄膜的性能进行了测试。结果显示,金刚石基片上制备的薄膜表面状态远优于硅基片上的薄膜表面状态;在同类型基底上生长的ZnO薄膜,薄膜的晶格取向随着氩氧比的升高而增强;对于硅基底上生长的ZnO薄膜,适当的退火能够成倍地提高薄膜的c轴取向性。     

氩氧比对ZnO薄膜特性的影响与紫外探测器的研制

利用射频磁控溅射技术在SiO2／n—Si和玻璃衬底上制备ZnO薄膜,研究了溅射气体氩氧比对薄膜特性的影响,在氩氧比为2：3下所制备的ZnO薄膜c轴择优取向相对较好,薄膜的颗粒随氩氧比的增加而增大,所制备的薄膜在可见光均具有较高的透射率,吸收边在360-380nm附近;并在以SiO。／n—Si为衬底,氩氧比为2：3,经过退火处理的ZnO薄膜上制作Ag-ZnO—Ag肖特基MSM叉指结构的紫外探测器,所制作的探测器在5V偏压下漏电流为3．3×10^-8A,在紫外波段有较高的响应度,光响应度峰值在365nm附近。     

Fabrication of IZO transparent conducting thin films by the use of magnetron sputtering equipped with ion‐beam system

Abstract— Indium zinc oxide (IZO) thin films have been prepared on glass, polycarbonate (PC), and polyethylene terephthalate (PET) substrates by using a radio‐frequency (RF) magnetron sputtering system equipped with an ion gun, and a simple OLED device was made by using IZO film. The influence of the RF power, the Ar gas volume, and the substrate temperature during the deposition process on the roughness and the electrical and optical properties of the films have been investigated. In addition, End‐Hall ion‐beam treatment of the substrates is applied before the sputtering deposition process. The sheet resistance of the IZO films is 25 Ω/□ for the glass, 21 Ω/□ for the PC, and 20 Ω/□ for the PET substrate with a thickness of 150 nm, and the lowest root‐mean‐square (rms) roughness of these IZO films were measured to be 0.58, 0.35, and 0.32 nm for glass, PC, and PET substrate, respectively. The decrease in the sheet resistance of the IZO films becomes evident after the ion‐beam treatment and makes the surface of the thin film more hydrophilic. Relative to non‐treated IZO film, the ion‐beam‐treated IZO anode in the OLED device seems to inject holes into the emitting layer to enhance the current density.