铁电体尺寸对其开关特性的影响

应用铁电体极化反转的Orihara-Ishibashi理论，讨论了圆形铁电薄膜和球形铁电体的开关电流以及开关时间对系统尺寸的依赖性。数值计算表明，不论是二维还是三维铁电系统，其铁电畴反转过程中产生的开关电流都随系统尺寸减少而下降，开关时间随系统尺寸减少而缩短。     

铁电体极化反转临界条件的细观力学分析

本文根据经典形核理论,对铁电体极化反转过程的临界条件进行了热力学研究,建立了包括温度影响、外场作用、界面能以及退极化能等的热-力-电耦合细观力学模型,计算了铁电体BaTiO3极化反转的临界形核半径和临界形核功。结果表明在畴变过程中BaTiO3的临界形核半径和临界形核功都随反向电场的增加而减小,同样电场强度作用下临界形核半径和临界形核功随着温度的升高而减小。     

钛酸钡高压相变的研究进展

钛酸钡是应用和研究最多的铁电体之一.从压力与介电常数的关系、晶胞参数与压力的关系、高压拉曼散射和高压X射线衍射实验等方面对高压下钛酸钡铁电相-顺电相的研究进行了综述.由于目前的研究只局限于实验方面,因此,在理论上探讨高压下铁电体的铁电相-顺电相转变机理和随晶粒尺寸变小钛酸钡材料的铁电相-顺电相转变压力的变化等方面将是未来研究的方向.     

高介电常数BaTiO3陶瓷畴反转电流影响因素的研究

采用溶胶-凝胶结合二次煅烧的方法制备了高介电常数BaTiO3陶瓷,通过X射线衍射分析得到所制备的体系为四方相和立方相共存结构,从扫描电镜的图像中能观察其晶粒尺寸为1μm。通过TF2000铁电分析仪得到其介电常数在煅烧温度为1310℃,保温时间为4h,室温、测试频率为100Hz、测试电压为100V的条件下最大值为38306。研究了BaTiO3铁电陶瓷的反转电流随温度、频率和电压的影响规律,研究发现随着温度的升高反转电流缓慢降低,而随着电场和频率的增加反转电流迅速升高。从能量的观点也能进一步分析温度和电场对于反转电流的影响。     

金属有机物分解法制备SrBi2Ta2O9铁电薄膜的开关特性

用金属有机物分解（MOD）以及sol-gel方法制备了SiBi2Ta2O9（STB）铁电薄膜。经测量在750℃晶化的SBT薄膜具有很好的铁电性能。通过对SBT样品极化反转过程进行测试,得出了外加电压（0．5－5V）与SBT薄膜的开关时间（100－600ms）及极化反转电荷的关系。并研究了不同气氛不退火对SBT铁电薄膜形状特性的影响。     

钛酸钡和钛酸铅的两个临界尺寸

随着尺寸的减小,铁电体将发生由多畴到单畴的变化以及铁电一顺电相变.发生多畴到单畴变化的尺寸称为单畴临界尺寸,发生铁电-顺电相变的尺寸称为铁电临界尺寸.本文报道了对铁电体尺寸效应研究的一些结果.对钛酸钡和钛酸铅,分别计算了这两个临界尺寸,计算结果与实验结果符合.     

弛豫型铁电体PZNT制备与性能研究的进展

本文综述了近年来国际上弛豫型铁电体PZNT的制备与介电、压电及电致伸缩性能研究的进展．PZNT单晶体的制备方法以高温PbO熔剂法为主,其尺寸已达40mm．随PT含量的变化,PZNT的顺电一铁电相交由弥散性、混合型变为一级相变;其铁电-铁电相变可由组份或电场诱导,由介电性能表征．压电性能在MPB处及偏向三方相一侧达到最佳,＜001＞切向的三方相与四方相单晶可分别作为频带宽、分辨率高、且阻抗匹配好的新一代声阵列与单个器件传感器．＜001＞向的PZNT单晶具有巨大的电致伸缩应变,可望成为高性能的固体驱动器．     

弛豫型铁电体PZNT制备与性能研究的进展

本文综述了近年来国际上弛豫型铁电体PZNT的制备与介电、压电及电致伸缩性能研究的进展．PZNT单晶体的制备方法以高温PbO熔剂法为主,其尺寸已达40mm．随PT含量的变化,PZNT的顺电一铁电相交由弥散性、混合型变为一级相变;其铁电-铁电相变可由组份或电场诱导,由介电性能表征．压电性能在MPB处及偏向三方相一侧达到最佳,＜001＞切向的三方相与四方相单晶可分别作为频带宽、分辨率高、且阻抗匹配好的新一代声阵列与单个器件传感器．＜001＞向的PZNT单晶具有巨大的电致伸缩应变,可望成为高性能的固体驱动器．     

FRAM用铁电薄膜疲劳问题研究进展

综述了FRAM用铁电薄膜的疲劳机理，对比了钙钛矿结构铁电体与铋层类钙钛矿结构铁电体的区别，介绍了铋层奚钙钛矿结构铁电材料的优良抗疲劳性能与该类铁电材料结构的密切关系，和为提高铋层类钙钛矿结构铁电薄膜Bi4Ti3O12的抗疲劳性能所采取的掺杂改性的研究现状，并针对目前铁电薄膜制备中存在的问题提出了今后研究需着重解决的关键问题。     

驰豫型铁电体的宏观介电性能与极化机制研究

驰豫型铁电体是很重要的功能材料,其介电性能和极化机制一直是研究的热点。作者通过对掺钛铌镁酸铅系列铁电陶瓷介电、铁电、热电等宏观性能和微观结构详细、系统的实验研究,提出铁电微畴为三方相畸变结构散布于立方钙钛矿母相中,通过类马氏体预相变的位移型形核过程,实现顺电—驰豫型铁电态的弥散相变,进一步通过类马氏体相变,完成驰豫型铁电态无序态分布的微畴向正常铁电态长程序铁电宏畴转变;提出T_1可调整A(B′B″)O_3型复合钙钛矿铁电体B′和B″离子价态和离子半径等不同所产生的内电场和弹性场,使立方母相所承受切应力发生变化,诱发极性微区、铁电微畴随组成变化表现不同活性。对弛豫型铁电体介电谱分析与计算表明,其在介电常数峰值温度Tm附近的介电弛豫过程连续变化,不对应结构突变的相变过程,较接近偶极介质。通过铌锌酸铅基系列铁电陶瓷在准同型相界附近异常特性的研究,进一步揭示弛豫型铁电体中结构特征决定宏观行为的必要性,反映出铁电材料由微观到介观、再到宏观的有趣规律性。在此基础上,对复合钙钛矿弛豫型铁电体偏压介电行为、电致伸缩特性、介电老化行为等进行了系统研究,合理解释了一系列新的实验现象和结果;并对钨青铜结构铌酸锶钡弛豫型铁电陶瓷复介电响应进行了详细的对比分析和讨     

铁电体中相变临界尺寸的研究现状

从铁电薄膜和铁电颗粒两大方面回顾了处理尺寸效应的理论研究方法(包括宏观的热力学唯像理论、微观的横场Ising模型和第一性原理计算)和铁电相变临界尺寸的理论预测. 总结了从50年代以来实验中观测到的各种铁电材料的临界尺寸, 简单介绍了铁电纳米陶瓷的一些尺寸效应, 并叙述了近几年才开始报道的铁电纳米线中的铁电相变. 最后指出了目前研究现状中存在的一些问题.     

铁电材料的研究进展

铁电材料的优秀电学性能孕育了它广阔的应用前景,其电子元件有着集成度高、能耗小、响应速度快等众多优点。而且目前研究者将铁电材料同其它技术相结合,使新诞生的集成铁电材料性能更为优秀。介绍了铁电材料的发展历史和当前的研究概况。详细描述了几种铁电材料的性能特点与研究进展,包括压电材料及在微机电系统中的应用,储能用铁电介质材料,有机铁电薄膜材料,具备2种以上初级铁性体特征的多铁材料,铁电阻变材料等。最后,总结了铁电材料研究中尚未解决的技术问题,并展望了铁电材料的发展趋势。     

Defect‐Mediated Polarization Switching in Ferroelectrics and Related Materials: From Mesoscopic Mechanisms to Atomistic Control

The plethora of lattice and electronic behaviors in ferroelectric and multiferroic materials and heterostructures opens vistas into novel physical phenomena including magnetoelectric coupling and ferroelectric tunneling. The development of new classes of electronic, energy‐storage, and information‐technology devices depends critically on understanding and controlling field‐induced polarization switching. Polarization reversal is controlled by defects that determine activation energy, critical switching bias, and the selection between thermodynamically equivalent polarization states in multiaxial ferroelectrics. Understanding and controlling defect functionality in ferroelectric materials is as critical to the future of oxide electronics and solid‐state electrochemistry as defects in semiconductors are for semiconductor electronics. Here, recent advances in understanding the defect‐mediated switching mechanisms, enabled by recent advances in electron and scanning probe microscopy, are discussed. The synergy between local probes and structural methods offers a pathway to decipher deterministic polarization switching mechanisms on the level of a single atomically defined defect.     

Nanostructured ferroelectrics: fabrication and structure-property relations

With the continued demand for ultrahigh density ferroelectric data storage applications, it is becoming increasingly important to scale the dimension of ferroelectrics down to the nanometer-scale region and to thoroughly understand the effects of miniaturization on the materials properties. Upon reduction of the physical dimension of the material, the change in physical properties associated with size reduction becomes extremely difficult to characterize and to understand because of a complicated interplay between structures, surface properties, strain effects from substrates, domain nucleation, and wall motions. In this Review, the recent progress in fabrication and structure-property relations of nanostructured ferroelectric oxides is summarized. Various fabrication approaches are reviewed, with special emphasis on a newly developed stencil-based method for fabricating ferroelectric nanocapacitors, and advantages and limitations of the processes are discussed. Stress-induced evolutions of domain structures upon reduction of the dimension of the material and their implications on the electrical properties are discussed in detail. Distinct domain nucleation, growth, and propagation behaviors in nanometer-scale ferroelectric capacitors are discussed and compared to those of micrometer-scale counterparts. The structural effect of ferroelectric nanocapacitors on the domain switching behavior and cross-talk between neighboring capacitors under external electric field is reviewed.     

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions

Complementary resistive switching (CRS) devices are receiving attention because they can potentially solve the current‐sneak and current‐leakage problems of memory arrays based on resistive switching (RS) elements. It is shown here that a simple anti‐serial connection of two ferroelectric tunnel junctions, based on BaTiO₃, with symmetric top metallic electrodes and a common, floating bottom nanometric film electrode, constitute a CRS memory element. It allows nonvolatile storage of binary states (“1” = “HRS+LRS” and “0” = “LRS+HRS”), where HRS (LRS) indicate the high (low) resistance state of each ferroelectric tunnel junction. Remarkably, these states have an identical and large resistance in the remanent state, characteristic of CRS. Here, protocols for writing information are reported and it is shown that non‐destructive or destructive reading schemes can be chosen by selecting the appropriate reading voltage amplitude. Moreover, this dual‐tunnel device has a significantly lower power consumption than a single ferroelectric tunnel junction to perform writing/reading functions, as is experimentally demonstrated. These findings illustrate that the recent impressive development of ferroelectric tunnel junctions can be further exploited to contribute to solving critical bottlenecks in data storage and logic functions implemented using RS elements.     

Reproducible Ultrathin Ferroelectric Domain Switching for High-Performance Neuromorphic Computing

Neuromorphic computing consisting of artificial synapses and neural network algorithms provides a promising approach for overcoming the inherent limitations of current computing architecture. Developments in electronic devices that can accurately mimic the synaptic plasticity of biological synapses, have promoted the research boom of neuromorphic computing. It is reported that robust ferroelectric tunnel junctions can be employed to design high-performance electronic synapses. These devices show an excellent memristor function with many reproducible states (≈200) through gradual ferroelectric domain switching. Both short- and long-term plasticity can be emulated by finely tuning the applied pulse parameters in the electronic synapse. The analog conductance switching exhibits high linearity and symmetry with small switching variations. A simulated artificial neural network with supervised learning built from these synaptic devices exhibited high classification accuracy (96.4%) for the Mixed National Institute of Standards and Technology (MNIST) handwritten recognition data set.     

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO₃ FTJ by comparing BaTiO₃ with SrTiO₃ based tunnel junctions. This coexistence results in two distinguishable loops with multi‐nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO₃ switching voltage, showing OVM being its origin. BaTiO₃ based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.     

铁电陶瓷中电畴翻转研究进展

电畴为铁电陶瓷固有的独特微观组织特征之一,铁电陶瓷的许多性能均与其密切有关.综述了铁电陶瓷中的电畴结构,系统介绍了电场、机械作用引起的电畴翻转,概述了电畴翻转对铁电陶瓷断裂韧性的影响及其研究进展.     

Dielectric and Ferroelectric Properties of Complex Perovskite Ceramics Under Compressive Stress

Dielectric and ferroelectric properties of complex perovskite PZT-PZN ceramic system were investigated under the influence of the compressive stress. The results showed that the dielectric properties, i.e. dielectric constant ( εr ) and dielectric loss ( tan δ), and the ferroelectric characteristics, i.e. the area of the ferroelectric hysteresis loops, the saturation polarization ( P(sat) ), and the remnant polarization (Pr) changed significantly with increasing compressive stress. These changes depended strongly on the ceramic compositions. The experimental results on the dielectric properties could be explained by both intrinsic and extrinsic domain-related mechanisms involving domain wall motions, as well as the de-aging phenomenon. The stress-induced domain wall motion suppression and non-180° ferroelectric domain switching processes were responsible for the changes observed in the ferroelectric parameters. In addition,a significant decrease in those parameters after a cycle of stress was observed and attributed to the stress induced decrease in switchable part of spontaneous polarization. This study clearly show that the applied stress had significant influence on the electrical properties of complex perovskite ceramics.     

Stress relaxation and estimation of activation volume in a commercial hard PZT piezoelectric ceramic

The stress relaxation of ferroelectric/piezoelectric material was studied using compression testing. The deformation was produced by the switching of ferroelectric domains. The internal stresses were estimated by decremental stress relaxation during unloading. The results were interpreted in terms of reversible and irreversible switching of the domains