白光LED及其涂敷用荧光粉的研究进展

白光LED因其低能耗、无污染、长寿命等优点被称作第四代照明光源,应用前景广阔.简要介绍了LED的特点,比较了实现白光LED的几种方法.综述了光转换法中白光LED用荧光粉的制备方法,总结了白光LED用荧光粉种类,重点分析介绍了紫外激发型白光LED用荧光粉的优缺点和发展现状,并对白光LED及其涂敷用荧光粉的发展进行了展望.     

单一基质白光LED用荧光粉的研究进展

白光LED被称为第四代照明光源,具有广阔的应用前景。单一基质白光LED用荧光粉因其具有独特的优势而被广泛关注,研制单一基质白光LED用荧光粉具有十分重要的意义。详细介绍了目前国内外单一基质白光LED用荧光粉的研究进展,重点对硅酸盐、磷酸盐等几类单一基质白光LED用荧光粉的研究现状作了评述,指出了当前存在的问题,并展望了其发展前景。     

基于硅酸盐体系白光LED用荧光粉的研究现状

以硅酸盐为基质的白光LED用荧光粉材料,具有良好的化学稳定性、热稳定性、合成工艺简单等优点,成为研究的热点.详细介绍了目前基于硅酸盐体系白光LED用荧光粉的研究现状,重点阐述了近年来二元硅酸盐、三元硅酸盐和其它硅酸盐荧光粉在制备、合成、发光性能方面的最新进展,最后展望了硅酸盐体系白光LED用荧光粉的制备工艺、发光性能以及新材料的开发.     

一种新颖的白光LED荧光粉测量系统和分析方法(英文)

为获得高效率的白光LED,得到荧光粉和芯片的最佳匹配,本文提出了一种新颖的白光LED荧光粉测量系统和分析方法.该方法根据荧光粉测量原理,采用单色光激发荧光粉,获得荧光粉的激发光谱特性.由单波长激发的光谱组合可以得到荧光粉的三维光谱特性,荧光粉光谱与LED芯片光谱匹配可以模拟白光LED光谱.分析了荧光粉在单波长及光谱激发条件下的效率.实验结果表明,该测量系统和分析方法可以确定荧光粉和兰光LED芯片的最佳匹配,从而为获得高效率白光LED奠定了良好的基础.     

白光LED用红色荧光粉的研究进展

白光LED具有低压、低功耗、高可靠性和长寿命等一系列优点,是一种符合节能环保的绿色照明光源.现阶段的白光LED显色指数低、色温较高,限制了白光LED在室内照明等领域的发展,而红色荧光粉能对白光LED的显色指数的提高及色温的改善影响极其显著.主要介绍白光LED用红色荧光粉几大主要体系的发光性质及最新发展现状.     

白光LED用荧光粉最新研究进展

白光LED具有节能、环保、寿命长等优点,被称为第四代照明光源,具有广阔的应用前景。主要阐述了几种白光LED用荧光粉的最新研究发展,提出了各种荧光粉存在的问题并对各种白光LED用荧光粉的发展方向进行了展望。     

三井矿业研发出新型高效硫化物荧光粉

日本三井矿业冶炼公司（MitsuiKinzoku）研发了一种白光LED用硫化物荧光粉材料。公司称,已经发明了红色和绿色荧光粉,可以结合蓝光LED产生白光,这与传统采用蓝光LED激发氧化物荧光粉产生白光的方法并不相同。     

白光LED用稀土红色荧光粉的研究进展

白光LED具有低压、低功耗、高可靠性和长寿命等一系列优点,是一种符合环保和节能的绿色照明光源。现阶段制造高显色指数、低色温,大功率白光LED是白光LED发展的总体趋势。而红色荧光粉性能对白光LED的显色指数及色温的影响极其显著。本方法着重介绍和评述了白光LED用红色荧光粉硫化物、氮化物、钼酸盐和钨酸盐等几大主要体系的发光性质及最新研究成果和发展现状,并对白光LED用荧光粉的发展进行了展望。     

近紫外光激发的白光LED用单基质硅酸盐荧光粉的研究进展

白光LED被称作第4代照明光源,有着庞大的应用市场.荧光粉光转换白光LED是当今固态照明的主流方案.研制近紫外光激发的白光LED用单基质硅酸盐荧光粉具有十分重要的意义.综述了目前国内外这一领域的研究进展,并指出了当前存在的问题及未来的发展方向.     

白光LED用氮化物及氮氧化物红色荧光粉的研究现状

白光LED是一种符合环保和节能的绿色照明光源,而红色荧光粉的性能对白光LED的显色指数及色温的影响极其显著.氮/氮氧化物体系红色荧光粉是一种非常优质的LED用荧光粉.介绍了氮/氮氧化物红色荧光粉的研究现状、晶体结构、主要的制备方法,针对目前还存在的一些问题,指出了今后的研究方向.     

Nondestructive diagnostics of nanoheterostructures with InGaN/GaN multiple quantum wells by thermal admittance spectroscopy

On the basis of the designed complex of low-temperature admittance spectroscopy, the electron spectrum of semiconductor light emitting diode (LED) heterostructures with InGaN/GaN multiple quantum wells was investigated. The features of the construction of the measuring complex, as well as the technique of measurements of semiconductor nanoheterostructures and processing of admittance spectra, are presented.     

白光LED用光转换材料的研究与发展

白光LED是新一代半导体照明光源,高效光转换材料的合成制备是其关键技术之一.简要介绍了白光LD的基本原理,分析了光转换材料的光转换性及其影响因素,综述了白光LED用光转换材料体系和性能特点,最后探讨了光转换材料的发展趋势.     

Color tuning of Y3Al5O12:Ce phosphor and their blend for white LEDs

Gadolinium or lanthanum co-doped (0.5 mole) yttrium aluminum garnet doped with cerium phosphors were synthesized by a citric acid gel method and the effect of co-dopants on the structural and luminescent properties were studied. A significant peak shift in the photoluminescence spectra of yttrium aluminum garnet doped cerium was observed from 535 to 556 and 576 nm for gadolinium or lanthanum co-doped phosphors, respectively. The color tuned phosphor were blended with yttrium aluminum garnet doped cerium which showed a considerable improvement in the Commission International De Eclairage chromaticity co-ordinate values of gallium nitride based blue light emitting diode pumped white light. White light emitted from yttrium aluminum garnet doped cerium shows a Commission International De Eclairage value of (0.229, 0.182) whereas the yttrium aluminum garnet doped cerium phosphor blended with gadolinium or lanthanum co-doped phosphor shows (0.262, 0.243) and (0.295, 0.282), respectively. These results demonstrate the possibility to use these phosphor blends to enhance the white light generation in the field of white-light emitting diode solid-state lighting.     

Nc-Si:H薄膜器件的研究

介绍了氢化纳米硅(nc-Si:H)薄膜在电子学器件和光电转换器件(如隧道二极管、异质结二极管、变容二极管、单电子晶体管、太阳能电池、发光二极管)等方面的研究进展,分析了这些器件的性能与nc-Si:H薄膜结构之间的关系,阐述了新型器件的优点.     

Template-free Fabrication and Luminescent Characterization of Highly Uniform and Monodisperse Y2O2S:Sm3+ Hollow Submicrospheres

Well dispersed and homogeneous Y2O2S:Sm3+ hollow submicrospheres were successfully achieved by a templatefree solvothermal method combining with a postcalcining process.The crystalstructure and particle morphology were investigated by the X-ray diffraction(XRD),Fourier transform infrared(FT-IR) spectra,scanning and transmission electron microscopy(SEM and TEM),respectively.A possible growth mechanism was proposed to reveal the formation process.Luminescence properties of the Y2O2S:Sm3+ long-lasting phosphor were analyzed by measuring the excitation spectra,emission spectra,afterglow decay curve and thermoluminescence curve.The excitation spectra indicated that the phosphor could be excited effectively by the ultraviolet-light emitting diode(UV-LED) or blue LED,and the emission spectra showed that the phosphor could emit red light from 600 to 650 nm.     

Electroluminescence of organolanthanide based organic light emitting diodes

Recent advances in organolanthanide based organic light emitting diodes have lead to the demonstration of infra-red emitting devices. A silicon based organic light emitting diode exhibiting 1.53 μm electroluminescence at room temperature has also recently been reported. Furthermore, recent work has led to a clearer understanding of the quenching mechanisms in these organolanthanide based devices and suggests that the efficiencies obtained to date can be greatly improved.     

Growth of Zn(1_x)Mg(x)O and Zn(1_x)Cd(x)O nanowires and the application in light emitting devices

Magnesium and Cadmium doped ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnance. Photoluminescence spectra show that the band gap of ZnO nanowire has been tuned from 4.00 eV to 2.08 eV by Magnesium and Cadmium doping. Transmission Electron Microscopy and X-ray diffraction characterization analysis indicate that most of the formed nanowires are single crystalline with good quality. Zn(1-x)Cd(x)O nanowire sample was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yields a strong emission peak at 553 nm from the Zn(1-x)Cd(x)O nanowire.     

MgZnO nanowires based deep ultraviolet heterojunction light emitting diodes

Vertically aligned Mg alloyed ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnace. Structural analysis found that the MgZnO nanowires are with single crystalline without phase separations. The atomic ratio of Mg/O in the nanowire was determined to be approximately 15%. Photoluminescence spectra show that the band gap of ZnO nanowire was tuned to approximately 3.6 eV due to Mg incorporation. N-type MgZnO nanowires/p-type GaN was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yielded ultraviolet emission peaks, which includes a deep ultraviolet at approximately 340 nm. The results suggest that successful Mg alloying in ZnO nanowires was achieved and is promising for deep ultraviolet devices.     

Photonic band structure and emissive characteristics of MEH-PPV textured microcavities

Abstract

A detailed comparison is made between the experimentally determined photonic band structure and the measured angle-dependent emission spectra of textured, metal-clad microcavities containing the light-emitting polymer MEH-PPV. Transmittivity measurements were made over a range of optical frequency and in-plane wavevector in order to obtain a detailed map of the dispersion of the waveguide modes supported by the textured cavities. Emission spectra were also recorded, for a large number of sample orientations, and are compared with the transmittivity maps. It is found that the band structure strongly influences the wavelength of the peaks in the emission spectra, and that the periodic texture leads to the generation of Bragg-scattered emission. The positions of these spectral peaks in both frequency and in-plane wavevector are found to agree very well with the positions of peak transmittivity of the cavities. The emission spectra also show clear evidence of the photonic band gaps formed by the periodic texture. The importance of these findings for light-emissive devices such as the light emitting diode is discussed.     

P型GaN和AlGaN外延材料的制备

研究了MOVPE方法外延P型GaN和Al0.13Ga0.87N的生长工艺,包括掺杂剂量和热退火条件,对材料电学性质的影响,得到了优良的P型材料,并研制了InGaN/AlGaN双异质结蓝发光二极管。