PLD法制备NiO薄膜及结构和形貌的研究

利用脉冲激光沉积法(PLD)在Si衬底上制备NiO薄膜,利用X射线衍射(XRD)和原子力显微镜(AFM)对所制备薄膜的晶体结构和表面形貌进行表征分析,研究衬底温度和脉冲激光能量对NiO薄膜结构和形貌的影响,得到生长质量较高、择优取向的多晶NiO薄膜的一种最佳制备条件.制备了p-NiO/n-Si异质结器件,Ⅰ-Ⅴ特性测试表明,器件具有良好的整流特性.     

基片温度对TiO2薄膜表面形貌和性能的影响

利用射频磁控溅射设备在玻璃基片上制备TiO2薄膜,采用AFM、UV-Vis分光光度、接触角测定仪等测试手段,研究基片温度对薄膜表面形貌、粗糙度和表面性能的影响.结果表明,随着基片温度增加,薄膜表面粗糙度增大,薄膜中颗粒由无定形态逐渐向定向排列的晶态转变,而薄膜结构、表面形貌和粗糙度的变化明显影响薄膜表面性能.最后,探讨了薄膜的生长机理.     

超高真空磁控溅射法沉积铀薄膜及其表面状态

铀薄膜有助于原子参数的测试研究,目前对铀薄膜研究的报道较少.利用超高真空磁控溅射法在单晶Si片上制备了铀薄膜.通过扫描电子显微镜(SEM)对铀薄膜的表面形貌进行了观察,利用X射线光电子能谱仪(XPS)及X射线衍射仪(XRD)对铀薄膜的表面结构及元素状态进行了分析和表征.结果表明:铀薄膜呈片状式生长,比较致密、连续,表面由铀及氧化铀组成,之下为纯铀.     

脉冲激光沉积法在GaN基片上制备c轴取向LiNbO_3薄膜

采用LiNbO3单晶靶材,以激光脉冲沉积方法在六方GaN(0001)基片上沉积制备c轴取向的LiNbO3薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)研究了沉积温度和氧气压强对生长的薄膜的相组成、外延关系、表面形貌、晶粒大小的影响。结果显示,沉积温度500℃、氧分压20~30 Pa是在GaN基片上生长c轴取向LiNbO3薄膜的最优生长条件。XRD分析表明,生长的LiNbO3薄膜具有两种晶畴结构,其外延关系分别为[1-100](0001)LiNbO3//[11-20](0001)GaN和[10-10](0001)LiNbO3//[-12-10](0001)GaN。SEM和AFM对薄膜的表面形貌表征表明,在最优生长条件下沉积的薄膜表面平整,致密度好。     

微-纳米复合结构ZnO薄膜的制备及其浸润性的研究

采用水浴法,在ITO玻璃表面生长出具有微-纳复合结构的ZnO薄膜,分别用高分辨扫描电镜(SEM)和接触角测量仪对其表面形貌和表面的浸润性进行了表征。实验结果表明,随着HF使用量的增加,ZnO薄膜的微观结构由球形逐渐过渡到花瓣状,使用三甲基氯硅烷修饰后,其表面接触角由(70±0.5)°逐渐增大到(141.5±0.5)°,同时也对氢氟酸(HF)对ZnO生长的调控机理进行了探讨。     

利用铜基底增强化学镀法制备金纳米颗粒/石墨烯复合薄膜

采用电泳沉积技术在铜基底表面制备了石墨烯(GNS)薄膜,进而利用氯金酸水溶液与铜基底之间的电置换反应在GNS薄膜表面沉积金纳米颗粒,从而得到金纳米颗粒/石墨烯(Au/GNS)复合薄膜.通过原子力显微镜(AFM),场发射扫描电镜(FE-SEM)X射线衍射(XRD)等测试手段对样品进行厚度,微观结构和化学成分分析,研究了不同置换反应时间对所得复合薄膜形貌和结构的影响,并分析了复合薄膜的沉积机理.     

纳米TiO2薄膜表面形貌与光致双亲性能的研究

采用溶胶-凝胶法,利用旋涂技术在玻璃表面制备了纳米TiO2薄膜.用X射线衍射仪(XRD)分析薄膜组成结构;用原子力显微镜(AFM)对薄膜表面形貌、粗糙度进行表征;以去离子水和苯作为水和油模型,研究了TiO2薄膜光致双亲的机理和表面薄膜粗糙度与双亲性的关系.结果表明:在550℃时,晶体生长得较完整,薄膜中的TiO2以锐钛矿形式存在,TiO2粒子的平均直径为26.2nm;双亲性跟表面粗糙度有关,粗糙度越大薄膜的双亲性能越好.     

射频等离子体增强化学气相沉积类金刚石薄膜的结构及摩擦学性能研究

以C2H2为碳源,Ar为辅助气体,利用射频等离子体化学气相沉积的方法在载玻片上成功地制备了类金刚石(DLC)薄膜.通过红外光谱分析了所制备DLC薄膜的结构;利用原子力显微镜分析了薄膜的表面形貌;通过表面轮廓仪测量了薄膜的沉积速率;还利用摩擦磨损仪对薄膜的机械性能进行了研究.实验结果表明,制备的DLC薄膜比较致密、均匀,有较好的耐磨性能.     

PTCDA/P-Si表面随温度变化的AFM研究

利用AFM研究了在不同衬底温度及蒸发条件下制备的有机半导体材料PTCDA在P-Si(100)形成的薄膜讨论了其表面形貌及岛状晶核分布与生长温度之间的机理.     

脉冲激光沉积Bi0.5(Na0.7K0.1Li0.2)0.5TiO3无铅压电薄膜的研究

采用脉冲激光沉积制备了新型无铅压电Bi0.5(Na0.7K0.1Li0.2)0.5TiO3陶瓷薄膜,分别利用X射线衍射仪、X射线光电子谱、俄歇电子能谱、原子力显微镜及扫描电镜研究了该薄膜的晶体结构、组成成分及表面形貌.结果表明,薄膜基体温度和工作气压对所生长的薄膜影响较大;在SiO2/Si基片上制备Bi0.5(Na0.7K0.1Li0.2)0.5TiO3薄膜的最佳温度和氧气压力分别为600℃和13Pa;利用脉冲激光沉积的薄膜具有精细的表面结构.     

CdS thin films growth by ammonia free chemical bath deposition technique

Cadmium Sulfide CdS thin films were deposited by chemical bath deposition technique using ethanolamine as complexing agent instead of commonly used ammonia to avoid its toxicity and volatility during film preparation. In order to investigate the film growth mechanism samples were prepared with different deposition times. A set of substrates were dropped in the same bath and each 30 minutes a sample is withdrawn from the bath, by this way all the obtained films were grown in the same condition. The films structure was analyzed by X rays diffraction. In early stage of growth the obtained films are amorphous, with increasing the deposition time, the films exhibits a pure hexagonal structure with (101) preferential orientation. The film surface morphology was studied by atomic force microscopy. From these observations we concluded that the early growth stage starts in the 3D Volmer-Weber mode, followed by a transition to the Stransky-Krastanov mode with increasing deposition time. The critical thickness of this transition is 120 nm. CdS quantum dots were formed at end of the film growth. The optical transmittance characterization in the UV-Visible range shows that the prepared films have a high transparency ranging from 60 to 80% for photons having wavelength greater than 600 nm.     

锆钒合金非晶膜的制备及性能研究

采用磁控溅射法制备出V/Zr比为2:1的非晶态锆钒合金膜,系统研究了合金膜的物相、表面成分、生长形貌和动态力学性能。研究结果表明,在533～773K的沉积温度区间内,合金膜呈现非晶态,表面存在约26nm厚的氧化层,其组成与膜基体显著不同;合金膜在钼基片上以球形岛状模式生长;膜的动态硬度DHT115和弹性模量Eit/(1-υ2)随沉积温度的升高在583K处出现极大值,分别达到436.8GPa和1.13E+5N/mm2。     

Epitaxial growth mechanism of La2Zr2O7 thin film on metal substrate

We have studied the growth behavior of pyrochlore structure La₂Zr₂O₇ (LZO) thin films with different thickness on biaxial texture NiW substrates prepared by metal?Corganic deposition (MOD) method. The structure and morphology of LZO films were investigated by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Our results show that the surface morphology of LZO films varies with changes in the surface coverage ratio of the metal substrates after crystallization in argon?Chydrogen atmosphere. The degree of texture of the LZO films reaches a maximum when the film thickness increases to 37 nm, where the NiW substrate surface is just fully covered. The complete coverage of the substrate surface together with the enhanced texture suggests that there exists a possible connection between the surface morphology and the texture development of the films prepared by MOD. Information on the nucleation and growth of oxide thin films on metal substrates with biaxial texture is important for understanding the mechanism of buffer layer formation and also for optimizing the preparation conditions for high-temperature superconducting coated conductors.     

溶液浓度和非溶剂比例对PVC膜形貌和疏水性能的影响

目的 研究溶液质量分数和非溶剂体积分数对PVC薄膜表面形貌和疏水性能的影响,以获得具有超疏水表面的PVC薄膜。方法 以四氢呋喃为良溶剂、乙醇为非溶剂,利用非溶剂诱导相分离的原理,采用旋涂法在玻璃基底上制备超疏水的聚氯乙烯（PVC）涂膜;通过对PVC样品的疏水性、表面形貌、结晶性能和热性能进行分析,探究溶液质量分数以及非溶剂的体积分数对PVC样品性能的影响。结果扫描电镜和接触角测试表明,添加一定体积分数的乙醇使得所制备的PVC样品形成了多孔膜层以及纳米级聚合物球粒,从而提高了PVC样品的疏水性。XRD测试结果表明,添加乙醇并不会改变PVC样品的无定形结构。结论 PVC溶液质量分数对所制备PVC样品的疏水性能和表面结构没有明显影响,乙醇体积分数为30%～40%时,可形成表面水接触角大于150°的超疏水表面。     

Fractal growth of Fe-N thin films prepared by magnetron sputtering at elevated temperature

Fe-N thin films were prepared by direction-current magnetron sputtering with different process parameters. The surface morphology and fractal dimension of the films have been studied using atomic force microscopy and small angle X-ray scattering techniques. The results indicate that the surfaces of thin films exhibit an obviously self-affine fractal characteristic, and the fractal dimension is greatly affected by the N₂/Ar flow rate ratio. When the N₂/Ar flow rate ratio is less than 1/6, the film growth follows the KPZ growth model. Contrarily, the growth mechanism of the film is agreement with the DLCA model.     

Atomic force microscopy and X-ray photoelectron spectroscopy evaluation of adhesion and nanostructure of thin Cr films

Chromium (Cr) thin films were deposited on float glass using electron beam (e-beam) physical vapor deposition and radio frequency (RF) magnetron sputtering techniques. Surface morphology of these Cr films was studied using atomic force microscopy (AFM). The e-beam deposited Cr films consisted of isolated surface mounds while in RF sputtered samples, these mounds combined to form larger islands. Lower surface adhesive properties were observed for e-beam deposited films, as determined from AFM force-distance curves, presumably due to the nanostructural differences. Similar amounts of adsorbed atmospheric carbonaceous contaminants and water vapor were detected on samples deposited using both methods with e-beam deposited samples having additional carbide species, as determined by X-ray photoelectron spectroscopy data. The dominant crystallographic plane in both e-beam deposited and RF sputtered Cr thin films was (110) of body-centered cubic Cr metal structure as determined from X-ray diffraction data. Weak (211) reflection was also observed in RF sputtered samples and was attributed to a different thin Cr film condensation and growth mechanism which resulted in nanostructural differences between films deposited using two different methods.     

LaNi5合金膜退火后的表面结构和氢敏特性

通过在空气中退火来改善由磁控溅射方法制备的LaNi_5合金膜的表面结构,使其具有在室温下吸放氢的能力。借助原子力显微镜、X射线衍射和X射线光电子能谱,分析了LaNi_5合金膜退火前后的形貌、结构和表层成分。结果表明:在空气中退火后,LaNi_5合金膜比表面积增加,并在其表层形成了La_2O_3-Ni的表层结构。氢敏测试结果显示,在空气中退火的样品不需要在高压纯氢中活化,在室温下即对氢气响应,说明该合金膜可以作为氢气传感器的敏感层。     

Bi-Te-Se热电薄膜的电化学沉积

在含有Bi 3＋、HTeO2＋、Se4＋离子的水溶液中通过电化学方法实现了Bi2Te3-ySey热电薄膜沉积,研究了电沉积Bi2Te3-ySey的阴极极化曲线及热电薄膜的生长过程,通过电子显微镜（SEM）和能谱仪（EDS）等手段对热电薄膜进行了形貌、成分分析。结果表明电解液的离子组成、沉积电位对薄膜成分、形貌有较大影响。在-0.07V沉积电位下制备的热电薄膜Bi2Te2.75Se0.95晶粒大小均匀,结构致密。