有机／无机层状类钙钛矿（C12H25NH3）2PbI4晶体及薄膜的制备与结构表征

介绍了有机／无机类钙钛矿（C12H25NH3）2PbI4的晶体和薄膜的制备，并采用了XRD、SEM、AFM和PL表征材料的结构、形貌及光学特性等。XRD实验表明制备的（C12H25NH3）2PbI4晶体结晶度高。探索旋涂法制备工艺参数对薄膜结构的影响．在薄膜XRD中几乎只能观察到（0021）晶面的衍射峰．表明有机／无机类钙钛矿层沿平行与基片方向择优生长，SEM和AFM表明薄膜致密性较好，表面粗糙度较小。     

二氧化铪晶态薄膜的自组装制备

利用自组装单层膜技术,在玻璃基板上生长有机硅烷单分子膜层,以Hf(SO4)2·4H2O和HCl配制HfO2前驱液,通过液相沉积在硅烷的功能性官能团上诱导生成二氧化铪薄膜.通过接触角测试仪、AFM、SEM及XRD等手段对膜材料的表面形貌和结构进行了研究分析.结果表明,利用自组装单层法成功制备出立方型的HfO2晶态薄膜,薄膜表面均一.     

DBD-PECVD法制备CN薄膜的结构及性能研究

使用自行设计的真空系统,采用介质阻挡放电等离子体增强化学气相沉积(DBD-PECVD)法,分别以CH4/N2、C2H2/N2、C2H4/N2混合气体作为反应气体,在单晶硅片上成功制备了CN薄膜.FTIR结果证实了薄膜中碳氮原子结合成化学键,Raman结果说明薄膜中含有类金刚石结构,AFM结果表明薄膜粗糙度随放电气压的升高而逐渐增大.三种混合气体沉积的CN薄膜,以CH4/N2的沉积速度最慢,薄膜表面粗糙度最小,含H量最少;C2H2/N2的沉积速度最快,薄膜表面粗糙度最大.     

基于热饱和溶液法CH3NH3PbI3单晶的制备及表征

采用热饱和溶液法,通过调控前驱体溶液1,4-丁内酯中PbI2和CH3NH3I的配比,进而对前驱液100℃进行加热,简单易操作地得到单晶CH3NH3PbI3。计算了不同调控条件下单晶CH3NH3PbI3的产率;利用SEM和XRD对其形貌和结晶度进行表征;通过吸收和荧光光谱对单晶的光谱性能进行表征。结果表明,单晶CH3NH3PbI3的最佳摩尔配比为n(PbI2)∶n(CH3NH3I)=2.3∶1,PbI2最佳浓度为1.229 mmol/mL。     

不同衬底上LaNiO3导电氧化物薄膜的制备和研究

通过MOD法和快速热处理过程,在Si(100)和Pt(111)/Ti/SiO2/Si衬底上制备了LaNiO3(LNO)导电氧化物薄膜.经XRD结构分析表明,所制备的LNO薄膜具有纯的钙钛矿结构,并且以(100)方向择优取向.经SEM和AFM分析表明,LNO薄膜具有表面均匀、无裂纹.经标准四探针法测试表明,LNO薄膜具有好的金属特性,其室温电阻率为7.6×10-4Ω·cm.铁电性能测试表明,LNO薄膜可以提高PZT铁电薄膜的剩余极化强度.     

SnO2:F导电薄膜的制备方法和性能表征

采用喷雾热分解(Spray pyrolysis)方法,以NH4F、SnCl2·2H2O为原料,对反应液配方进行了优化,在普通玻璃衬底上制备出了光电性能优良的掺F二氧化锡透明导电薄膜.采用X射线衍射仪(XRD)、扫描电镜(SEM)、紫外-可见分光光度计(UV/VIS)对薄膜的结构、形貌、光学、电学特征进行了表征和分析.结果表明:在衬底温度为500℃, NH4F/SnCl2·2H2O的质量百分比为20%,喷涂时间为15s时掺F二氧化锡薄膜的方块电阻最低达到6.2Ω/□,可见光透射率为86.95%,且薄膜晶粒均匀,表面形貌平整致密.     

氩气氛下制备的C60薄膜的形貌、结构和光学性质

用原子力显微镜(AFM)、X射线衍射(XRD)、红外光谱(IR)及紫外-可见光谱(UV/VIS)研究了在氩(Ar)气氛下制备的C60薄膜的表面形貌、结构及光吸收特性.发现其UV/VIS的强度和吸收峰位置明显不同于在真空中制备的G60薄膜.与真空中制备的C60薄膜比较,所研究薄膜的红外谱没有变化,但X射线衍射表明其结构从面心立方(fcc)相变成fcc相与六角密堆(hcp)相的混合相.AFM表明,在Ar气氛中制备的C60薄膜有较大的表面粒子,并且表面生长岛更尖锐.这将有利于G60薄膜的场电子发射.     

非晶碳/Mo2C混合膜的场发射特性

以镀有Mo过渡层的A12O3衬底,在微波等离子体增强化学气相沉积(MPCVD)系统中,制备了非晶碳/Mo2C混合结构薄膜,反应气体为CH4和H2.在高真空室中测量了样品场发射特性.开启场强为0.55V/μm,在1.8V/μm电场下样品的发射电流密度为6.8mA/cm2.发射点点密度＞103/cm2.用SEM观察了表面形貌,Raman和XRD谱分析了薄膜的微观结构和成分.实验结果表明该薄膜是一种好的场致电子发射体.     

H2C2O4稳定剂对SOl-Gel法制备LiNbO3薄膜的影响

研究了分别以H2C2O，HNO3，HCOOH和CH3COOH作稳定剂的LiNbO3薄膜先驱液的稳定性，发现H2C2O4作稳定剂的先驱液的稳定性最好，用sol-gel法在Si(110)基板上制备了以H2C2O4作稳定剂的LiNbO3薄膜，并对LiNbO3薄膜进行了IR，XRD和SEM表征，结果表明，生成的LiNbO3为多晶，与HNO3相比，以H2C2O4作稳定剂制备的LiNbO3薄膜形貌较差。     

基于氧化石墨烯空穴传输层的平面异质结钙钛矿太阳能电池

钙钛矿太阳能电池中传统空穴传输层Spiro-OMeTAD存在昂贵、易污染环境且制备困难等缺点,本工作采用氧化石墨烯(Graphene oxide,GO)作为空穴传输层,研究了不同浓度GO溶液制备的衬底对器件光电性能的影响.首先,采用旋涂法制备了GO薄膜,通过对分散液浓度的控制获得了不同厚度的GO衬底.其次,制备了结构为ITO/GO/CH3 NH3 PbI3/PCBM/Ag的平面型器件,对不同GO衬底的器件的光电性能进行表征及对比分析.研究表明:GO衬底缺陷会抑制CH3 NH3 PbI3晶粒的择优取向生长,形成可诱导CH3 NH3 PbI3晶粒产生横向聚集的籽晶,从而改善钙钛矿薄膜的成膜性,并增大钙钛矿晶粒尺寸.由浓度为0.25 mg/mL的分散液制备的GO薄膜衬底上生长的钙钛矿晶粒尺寸最大为900 nm.此外,该浓度对应的GO衬底上制备的钙钛矿薄膜的光致发光相对强度峰值为2000,电荷转移效率相对最高,为52.8％.由该衬底制备的GO基钙钛矿太阳能电池的光电转化效率最高可提升至8.69％.     

检定和校准证书的异同与应用

本文介绍了检定和校准以及证书的两点相同、五点不同之处,说明了对检定证书和校准证书的正确应用。     

Synthesis and luminescent properties of alkali-metal and ammonium fluorosulfatozirconates and fluorosulfatohafnates

We have synthesized a variety of alkali-metal and ammonium fluorosulfatometallates (titanates, zirconates, and hafnates). The alkali fluorosulfatozirconates and fluorosulfatohafnates have been shown to exhibit efficient roentgenoluminescence (RL) in the UV through visible spectral region, with a maximum at 390–440 nm. Their RL spectra depend significantly on their composition (cation, anion, and water content), coordination of KF and K₂SO₄, and relative amounts of fluorine and SO₄ groups. We have examined the effect of heat treatment on the RL of these compounds. The rubidium and cesium fluorosulfatozirconates Rb₃Zr₂F₉SO₄ · 2H₂O, Cs₂ZrF₂(SO₄)₂ · 2H₂O, Cs₈Zr₄F₂(SO₄)₁₁ · 16H₂O, and Cs₂ZrF₄SO₄ offer the most efficient RL.     

The shape and stability of wall-bound and wall-edge-bound drops and bubbles

The behavior of wall-bound drops and bubbles is fundamental to many natural and industrial processes. Key characteristics of such capillary systems include interface shape and stability for a variety of gravity levels and orientations. Significant solutions are in hand for axisymmetric pendent drops for a variety of uniform boundary conditions along the contact line with gravity acting normal to a planar wall. The special case of a wall-bound drop or bubble that is also pinned at an edge (i.e. a ‘wall-edge-bound’ drop) is considered here where numerical solutions are obtained for interface shape and stability as functions of drop volume, contact angle, fluid properties, and uniform gravity vector. For a semi-infinite zero-thickness planar wall (plate), a critical contact angle is identified below which wall-edge-bound drops are always stable. The critical contact angle is computed as a function of the gravity vector. The numerical procedure, which makes no account for contact angle hysteresis, predicts that such wall-edge-bound drops are unconditionally unstable for any gravity field with a component that is tangent to the wall while inwardly normal to the edge. Select experiments are conducted that support the conclusions drawn from the numerical results.     

凝固科学技术与材料

从凝固科学与实践发展的角度介绍了当前凝固材料体系的基本框架和凝固科学主要发展阶段的基本理论。作为材料科学与工程的基本组成，凝固科学技术正在现代科学理论的基础上针对传统材料的改性提高和新材料的发展需求，以控形、控构、控性为目标开展优质铸件的定向、晶体生长、快凝、深过冷及各种新型和超常领域凝固过程的研究，并介绍了其中某些方面和展望了可能的发展趋势。     

Heat and Mass Transfer and Modeling and Prediction of Environmental Catastrophes

Basic definitions and concepts of the physicomathematical theory of natural catastrophes are given. Possibilities of mathematical modeling of natural and technogenic catastrophes are discussed in the context of the theory of heat and mass transfer and the mechanics of reacting media. The importance of taking into account conjugate heat and mass exchange in modeling catastrophes is emphasized. A formula for evaluating the probability of a collisional catastrophe is given.     

Multi-ferroic and magnetoelectric materials and interfaces

The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.