中子单粒子效应数据获取系统设计与实现

单粒子效应是一种威胁航天器安全的空间环境效应,为了航天事业的发展,对该效应进行模拟实验尤为重要,中国散裂中子源(CSNS)建设的大气中子辐照谱仪(ANIS)为该实验提供了先进的中子单粒子效应测试与科研平台。基于Qt开发了中子单粒子效应测试系统的数据获取系统软件,应用于ANIS谱仪,通过该软件能够实现对测试系统的配置和监测、数据存储和显示等。通过在实验室和ANIS谱仪的实验结果表明,该数据获取系统软件稳定可靠,可以满足ANIS谱仪单粒子效应测试需求。     

用于单粒子效应辐照实验的CYCIAE-100白光中子源研究

中子诱发单粒子效应会影响航空飞行器和地面核设施用电子器件的可靠性。基于质子加速器打靶产生的白光中子束是研究电子器件中子单粒子效应的重要中子源。通过开展辐照实验获取器件中子单粒子效应截面或阈值等信息,能够预测器件在中子辐射环境中的失效率,并为有针对性抗辐射加固提供数据支撑。中国原子能科学研究院100 MeV质子回旋加速器(CYCIAE-100)通过质子轰击W靶发生散裂反应可以产生具有连续能量的白光中子。本文基于核反应理论,采用蒙特卡罗方法模拟了100 MeV质子与W靶相互作用产生的中子的产额、能谱和角分布,模拟结果表明,平均1个100 MeV质子可以产生0.33个中子;中子能量范围为0～100 MeV,且随着能量的增加中子注量先增加后减小,峰值在1 MeV附近;沿质子束方向中子角分布具有轴对称性,且随着出射角的增加,中子注量先减小后增加,在90°时,中子注量最小。选取0°出射方向的中子束开展单粒子效应实验,采用基于双液闪探测器的中子飞行时间法测量白光中子能谱,获得了能量范围为3～100 MeV的中子能谱,且当质子束为100 MeV/1μA时,在距离W靶15 m处的中子注量率为3.3×10...     

直流输电用特高压晶闸管大气中子失效率评估和损伤机理

本文基于散裂中子源开展了直流输电用8.5 kV/5 kA晶闸管的加速辐照试验。试验证实了大气中子导致的晶闸管单粒子烧毁失效现象,同时基于加速辐照试验结果计算了大气中子导致的晶闸管失效率。晶闸管的反向偏置电压和结温是影响晶闸管器件失效的关键因素。大气中子失效率随着反向偏置电压的增加呈指数增加。此外,失效率随温度的降低而增加。对应器件偏置在50%额定电压下的情况,5℃时的失效率较25℃时增加了近6倍。基于TCAD仿真进一步验证了辐照导致晶闸管失效的机理。仿真表明,单粒子烧毁失效与辐射粒子入射诱发的雪崩击穿效应直接相关。雪崩击穿效应与晶闸管反向偏置电压正相关,而与结温负相关,这与大气中子失效率随电压和结温的变化关系一致。     

数字信号处理器的单粒子辐照试验初步研究

介绍了高能中子对数字信号处理器TMS320P25在动态工作情况下的单粒子效应试验。通过对TMS320P25输出波形和工作电流的测量,摸索出单粒子对该器件的影响规律,并给出了分析结果、试验数据和测量方法。     

基于高海拔地区的大气中子单粒子效应实时测量试验研究

开展65 nm高速大容量静态随机存取存储器（SRAM）大气中子单粒子效应特性及试验评价技术研究,基于4 300 m高海拔地区大面积器件阵列实时测量试验,突破效应甄别、智能远程测控等关键技术,在153 d的试验时间内共观测到错误43次,其中器件内单粒子翻转39次,多单元翻转（MCU）在单粒子翻转中占比23%,最大的MCU为9位。对高能中子、热中子和封装α粒子的贡献比例进行了分析,并基于多地中子通量数据,推演得到北京地面和10 km高空应用时的单位翻转（SBU）和MCU失效率（FIT）。发现地面处软错误的主要诱因为封装α粒子,随着海拔的增高,大气中子对软错误的贡献比例明显增大;MCU全部由高能中子引起,北京10 km高空处的MCU FIT值明显增大,其占比由地面的8%增大至26%。结合器件版图布局,对MCU产生机理进行了深入分析。最后,提出一种目标导向的存储器软错误加固策略优化方法。     

单粒子效应敏感器件可靠性分配计算

为了降低系统中单粒子效应(SEE)敏感器件所产生的危害,开展了辐射环境下系统可能发生单粒子效应的敏感器件及参数的研究。在综合考虑系统自检/修复功能的基础上,给出了破坏性和非破坏性SEE对系统连续性、完好性及可用性的影响。结合非计划中断维修时间的长短情况,给出了系统中存储位与失效率的关系,建立了系统可接受的单粒子效应敏感器件失效率的分配计算方法。该算法可以满足系统规定的连续性、完好性和可用性指标要求,为系统在选型阶段进行初步设计的指标分配计算提供依据。     

SRAM单元中子单粒子翻转效应的Geant4模拟

应用Geant4工具,构造了不同特征尺寸的SRAM单元几何模型及单粒子翻转截面计算模型,分析了敏感体积和临界电荷对低能中子单粒子翻转效应的影响趋势,计算了反应堆裂变中子谱辐射环境下,不同特征尺寸SRAM的中子单粒子翻转截面,认为小尺寸SRAM器件的低能中子单粒子翻转效应更为严重。     

14MeV中子引发SRAM器件单粒子效应实验研究

在中国原子能科学研究院的高压倍加器装置上开展了SRAM器件的14 MeV中子单粒子效应实验研究。介绍了中子的产生、中子注量率的测量和调节以及中子单粒子效应的测试等的实验方法,获得了HM628512BLP型和R1LV1616HSA型SRAM器件的14 MeV中子单粒子效应截面。前者与文献的单粒子效应截面在误差范围内一致,验证了实验方法的科学性和可行性。后者与由效应机制出发获得的理论分析结果在量级上一致,对实验结果给出了定性的解释。     

CMOS图像传感器单粒子效应及加固技术研究进展

互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)图像传感器(CMOS Image Sensor,CIS)在空间应用时会受到单个粒子辐照影响,这通常会导致CIS采集图像出现异常,严重时会导致器件功能失效。本文从不同粒子的角度:重离子、质子、电子和中子,从CIS容易发生的单粒子效应类型:单粒子瞬态(Single Event Transient,SET)、单粒子翻转(Single Event Upset,SEU)、单粒子闩锁(Single Event Latchup,SEL)、单粒子功能中断(Single Event Functional Interrupt,SEFI)等方面综述了CIS单粒子效应研究进展。简要介绍了CIS单粒子效应加固技术研究进展。分析总结了目前CIS单粒子效应及加固技术中亟待解决的问题,为今后深入开展相关研究提供理论参考。     

FLASH ROM 28F256和29C256的14 MeV中子辐照实验 …

给出了国内首次ＦＬＡＳＨ ＲＭＯ器件的中子辐照效应实验研究结果，发现２８Ｆ２５６和２９Ｃ２５６器件的１４ＭｅＶ中子辐照效应不同于以往所认国的单粒子效应，它只有“０”→“１”错误。错误发生有个中子注量阈值，当中子注量小于某一个值时，无错误；当中子注量达到一定值时，开始出身错误，随着中子注量的增加，错误数增加，直到所有“０”变为“１”。动态监测和静态加电的器件都出现硬错误，不能用编程器重新写入数据。错     

基于GEM的中子束线监测器电子学系统研制

简要介绍了一种基于GEM(Gas Electron Multiplier气体电子倍增器)的、用于对中子束进行实时监测的中子束线监测器GEM Monitor,重点介绍了其中电子学部分的设计,包括电路工作原理、系统结构、子板设计及Monitor母板FPGA逻辑及其算法的实现。最后给出了相关测试结果。     

Characterization of neutron field in the experimental fast reactor JOYO for fuel and structural material irradiation test

The experimental fast reactor JOYO has been operated as an irradiation test facility for fast reactor fuel and structural material since 1983 with its MK-II core. During this time, an extensive study was conducted to characterize the neutron field in order to assure the accuracy and reliability of neutron fluence. Neutron flux for a given irradiation test was calculated using a core management code system based on three-dimensional diffusion theory. It was then corrected with the adjusted neutron spectrum by means of the multiple foil activation method. The neutron fluence calculation accuracy in the fuel region was evaluated within a 5% error by comparing the burn-up of spent fuel with the measured values, which had been obtained from their post-irradiation examination. At positions away from the fuel region, the neutron flux distribution was calculated using a two-dimensional transport code. A Monte Carlo code was also used to analyze the detailed neutron flux distribution within an irradiation test subassembly that had a heterogeneous internal structure. With the neutron flux results various irradiation parameters, such as displacement per atom (dpa) and helium production, could be evaluated. A helium accumulation fluence monitor has been developed to measure not only neutron fluence but also helium production. Neutron flux and fluence obtained from the core management calculations were compiled as a database for users’ convenience together with related irradiation information and fuel subassembly material compositions. These data are expected to be widely used in the post-irradiation analysis of fuel and structural material.     

CSNS中子带宽限制斩波器样机控制系统的设计与实现

中子带宽限制斩波器是中国散裂中子源(CSNS)飞行时间型中子散射谱仪中用于选择特定波段范围中子的装置,其控制系统要求能够实现斩波器相位信号与加速器定时信号同步并完成对斩波器运行状态监控的功能。本文针对控制指标的要求,阐述了控制系统的结构、控制原理及软件设计方案,并对系统控制精度和稳定性进行了分析。     

Feasibility study of photo-neutron flux in various irradiation channels of Ghana MNSR using a Monte Carlo code

Computer simulation was carried out for photo-neutron source variation in outer irradiation channel, inner irradiation channels and the fission channel of a tank-in-pool reactor, a Miniature Neutron Source Reactor (MNSR) in sub-critical condition. Evaluation of the photo-neutron was done after the reactor has been in sub-critical condition for three month period using Monte Carlo Neutron Particle (MCNP) code. Neutron flux monitoring from the Micro Computer Control Loop System (MCCLS) was also investigated at sub-critical condition. The recorded neutron fluxes from the MCCLS after investigations were used to calculate the power of the reactor at sub-critical state. The computed power at sub-critical state was used to normalize the un-normalized results from the MCNP.     

Crack propagation characteristics in neutron irradiated type 316 stainless steel microspecimens

In order to better relate the macroscopic mechanical behavior of irradiated alloys to their associated microstructural condition, unirradiated and neutron irradiated microspecimens were tensile tested at 25–600°C in a quantitative load elongation stage while under continuous observation in a high voltage electron microscope (HVEM). The microtensile specimens, 40 μ m thick, of type 316 stainless steel were irradiated at ambient temperature to a fluence of 1 × 10²² n/m² with 14 MeV neutrons in the Lawrence Livermore Rotating Target Neutron Source II (RTNS) facility.Crack angles, directions and length plotted against total specimen elongation were used to describe the manner in which a crack progressed through each specimen. Rapid crack propagation is accompanied by rapidly changing crack angles and direction and conversely slow propagation corresponds to slowly changing variables. A graph of cumulative crack length plotted against total elongation exhibits a slope which increases as specimen ductility decreases. This graph reflects changes due to the effect of neutron irradiation.     

Radiation tolerance tests of components for the FERMI microchip module

A project has been in progress to provide information on radiation hardness properties of components to be used in the Front End Readout MIcrosystem (FERMI) collaboration. Neutron activation studies as well as neutron and γ radiation tolerance tests have been carried out on digital circuit components, prepared with different (partly radiation hardened) technologies, using 3.7 MeV average energy neutron and ⁶⁰Co γ radiation. The test board and the irradiation conditions as well as the data acquisition and evaluation program are described.     

密封中子管氘-氘产额及二次电子抑制

中子管的工作参数是影响中子产额的重要因素。为了更准确地调控D-D中子管的中子产额,对中子管的工作参数与产额关系进行了研究,同时为了提高中子管束流品质及寿命,对中子管的二次电子抑制进行实验。采用控制参数变量的方法分别研究了D-D中子管的热子电流、阳极高压、靶极高压对中子产额的影响,以及二次电子抑制电阻阻值与靶极电流之间的关系。结果表明：中子产额随着热子电流的增加而增加,当靶极高压为-80 kV、阳极高压为2.6 kV时,热子电流的最佳调控范围为290~305 mA;阳极高压与中子产额呈非线性关系,最佳阳极高压需要高于2.6 kV;靶极高压升高,中子产额随之增加,而且高压越高产额增加越快,靶极高压最佳工作范围为-120~-100 kV;D-D中子管二次电子抑制电阻阻值为8.7 MΩ或者抑制电压为403 V时,便可以完全抑制住二次电子。中子管的工作参数与中子产额的关系为今后中子管产额稳定性自调节可提供参考,二次电子抑制实验为抑制二次电子电流的产生提供依据。     

Re-evaluation of neutron displacement cross sections for silicon carbide by a Monte Carlo approach

Neutron displacement cross sections for SiC are re-evaluated by a Monte Carlo approach, with damage energies of primary recoils calculated by the stopping and range of ions in matter (SRIM) code. The validity of the Monte Carlo model is examined by the case of iron, and the results show good agreement with the reference values. Neutron displacement cross sections for SiC at energies up to 100 MeV are calculated, and averaged over the neutron spectra of a fusion DEMO reactor, the high flux test module of the International Fusion Materials Irradiation Facility, and typical fission test reactors. Gas production is also calculated for those neutron irradiation facilities. Finally, the suitability of the displacement cross sections is discussed. The results on comparison among neutron irradiation of different facilities by the current displacement cross sections are similar to those by results of the previous work. Moreover, since neutron displacement cross sections in this study are calculated with damage energies of primary recoils calculated by SRIM, neutron damage evaluated by our displacement cross sections is suitable for correlation with damage by heavy ions calculated by SRIM.     

Geant4在中子辐射效应中的应用

中子辐射效应是半导体器件在辐射环境中损伤的重要因素。本文建立了中子在半导体材料中的电离和非电离能量沉积、原子空位密度的Geant4模拟方法。电离能量沉积可用于分析电离总剂量效应,非电离能量沉积可用于分析位移损伤效应。电离kerma因子的模拟结果定量解释了中子辐照在CMOS工艺单片机中引起的电离增强效应。通过原子空位密度计算了中子引入的附加陷阱密度,分析了位移损伤对电离效应的增强作用。实验和模拟结果表明,中子的电离能量沉积加剧了CMOS工艺单片机的退化。     

原型微堆辐照座物理特性参数模拟测定

文章给出了原型微堆辐照座同的某些物理特性参数；相对中子通量密度分布，绝对中子通量密度，能谱能数（镉比、超热指标和中子温度），某些样品在辐照座内对反应性的影响以及各辐照座之间的相互关系，实验研究在原型微堆的零功率实验装置上完成。