Photophysical investigation of the formation of defect levels in P doped ZnO thin films

Zinc oxide (ZnO) offers a major disadvantage of asymmetry doping in terms of reliability, stability, and reproducibility of p-type doping, which is the main hindrance in realization of optoelectronic devices. The problem is even more complicated due to formation of various native defects in unintentionally doped n-type ZnO. The realization of p-type conductivity in doped ZnO requires an in-depth understanding of the formation of an effective shallow acceptor, as well as donor-acceptor compensation. Photophysical properties such as photoconductivity along with photoluminescence (PL) studies have unprecedentedly and effectively been utilized in this work to monitor the evolution of various in-gap defects. Phosphorus (P) doped ZnO thin films have been grown by RF magnetron sputtering under various Ar to O₂ gas ratios to investigate the effect of O₂ on the donor-acceptor compensation by comprehensive photoconductivity measurements supported by the PL studies. Initial elemental analyses indicate presence of abundant zinc vacancies (V_Zn) in O-rich ambience. The results predict that P sits in the zinc (Zn) site rather than the oxygen (O) site causing the formation of P_Zn–2V_Zn acceptor-like defects, which compensates the donor defects in P doped ZnO films. Photocurrent spectra uniquely reveal presence of more oxygen vacancies (V_O) defects states in lower O₂ flow, which gets compensated with an increase in the O₂ flow. Successive photocurrent transients indicate probable presence of more V_O in the films grown with lower O₂ flow and more V_Zn in higher O₂ flow. Overall the photosensitivity measurements clearly present that O-rich ambience expedites the formation of acceptor defects which are compensated, thereby lowering the dark current and enhancing the ultraviolet photosensitivity.     

Friction compensation controller for load varying machine tool feed drive

The load applied to a machine tool feed drive changes during the machining process as material is removed. This load change alters the Coulomb friction of the feed drive. Because Coulomb friction accounts for a large part of the total friction the friction compensation control accuracy of the feed drives is limited if this nonlinear change in the applied load is not considered. This paper presents a new friction compensation method that estimates the machine tool load in real time and considers its effect on friction characteristics. A friction observer based on a Kalman filter with load estimation is proposed for friction compensation control considering the applied load change. A specially designed feed drive testbed that enables the applied load to be modified easily was constructed for experimental verification. Control performance and friction estimation accuracy are demonstrated experimentally using the testbed.     

Design and validation of robotic bionic eye with multiple flexible ropes parallel mechanism inspired by oculomotor law

Producing a stable and agile bionic eye for visual image acquisition in robotics is a challenging task. In this paper, we design a bionic eye with mirror-symmetric distribution and cross-connection of flexible ropes. This mechanism is based on oculomotor law and the physiological structure of the extraocular muscles (EOMs). Specifically, the basic structural parameters are determined by Listing’s law, and the unique connection of the flexible ropes can realize the functions of the recti and oblique muscles. Furthermore, to mimic the trochlea structure, a pulley mechanism is constructed to permit the free movement of the flexible ropes. Through simulation and physical experiments, it is demonstrated that the bionic eye mechanism can move with agility under the structural parameters. The experimental results indicate that the proposed bionic eye mechanism has a superior motion accuracy of 2.798 mm, which is 6.7% of the maximum motion distance, and the repeatable accuracy of the mechanism can up to 0.210 mm.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

Reducing the complexity of distance measurement methods for circular turbo codes that use structured interleavers

The knowledge of turbo code's minimum Hamming distance (d_min) and its corresponding codeword multiplicity (A_min) is of a great importance because the error correction capability of a code is strongly tied to the values of d_min and A_min. Unfortunately, the computational complexity associated with the search for d_min and A_min can be very high, especially for a turbo code that has high d_min value. This paper introduces some useful properties of turbo codes that use structured interleavers together with circular encoding. These properties allow for a significant reduction of search space and thus reduce significantly the computational complexity associated with the determination of d_min and A_min values. © 2014 The Authors. International Journal of Communication Systems published by John Wiley & Sons, Ltd.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Three-phase four-wire shunt active power filter based on the SOGI filter and Lyapunov function for DC bus control

The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).     

LTE系统多小区上行联合功控算法

针对传统的小区内开环功率控制算法通常以提升本小区的吞吐量性能为目标，忽略了当前小区用户对邻小区用户同频干扰的问题，为提升边缘用户性能的同时兼顾系统整体性能，提出了一种LTE系统小区间上行联合功率控制（UJPC）算法。该算法采用单基站三扇区为系统模型，以最优化系统吞吐量比例公平函数为目标，首先根据最小信干噪比（SINR）约束值和用户最大发射功率这两个约束条件得到相应的数学优化模型，然后采用连续凸近似的方法求解优化问题得出各个基站所管辖的小区内所有用户的最优发射功率。仿真结果表明，与基准的开环功控方案相比，联合功控方案在保证系统平均频谱利用率的情况下能够较大幅度地提高小区边缘频谱利用率，其最佳性能增益能达到50%。     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.