首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   35870篇
  免费   5132篇
  国内免费   2564篇
电工技术   19630篇
技术理论   1篇
综合类   2588篇
化学工业   918篇
金属工艺   1134篇
机械仪表   2530篇
建筑科学   701篇
矿业工程   773篇
能源动力   1095篇
轻工业   291篇
水利工程   607篇
石油天然气   310篇
武器工业   246篇
无线电   6734篇
一般工业技术   1379篇
冶金工业   834篇
原子能技术   311篇
自动化技术   3484篇
  2024年   165篇
  2023年   524篇
  2022年   848篇
  2021年   1061篇
  2020年   1175篇
  2019年   909篇
  2018年   974篇
  2017年   1404篇
  2016年   1514篇
  2015年   1896篇
  2014年   2552篇
  2013年   2106篇
  2012年   3063篇
  2011年   3280篇
  2010年   2384篇
  2009年   2493篇
  2008年   2404篇
  2007年   2808篇
  2006年   2467篇
  2005年   1862篇
  2004年   1387篇
  2003年   1254篇
  2002年   983篇
  2001年   903篇
  2000年   726篇
  1999年   552篇
  1998年   358篇
  1997年   295篇
  1996年   271篇
  1995年   198篇
  1994年   174篇
  1993年   157篇
  1992年   105篇
  1991年   77篇
  1990年   62篇
  1989年   43篇
  1988年   39篇
  1987年   21篇
  1986年   14篇
  1985年   12篇
  1984年   15篇
  1983年   10篇
  1982年   6篇
  1981年   4篇
  1980年   2篇
  1979年   2篇
  1978年   3篇
  1975年   1篇
  1966年   1篇
  1964年   1篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
1.
《Ceramics International》2022,48(14):20000-20009
Zinc oxide (ZnO) offers a major disadvantage of asymmetry doping in terms of reliability, stability, and reproducibility of p-type doping, which is the main hindrance in realization of optoelectronic devices. The problem is even more complicated due to formation of various native defects in unintentionally doped n-type ZnO. The realization of p-type conductivity in doped ZnO requires an in-depth understanding of the formation of an effective shallow acceptor, as well as donor-acceptor compensation. Photophysical properties such as photoconductivity along with photoluminescence (PL) studies have unprecedentedly and effectively been utilized in this work to monitor the evolution of various in-gap defects. Phosphorus (P) doped ZnO thin films have been grown by RF magnetron sputtering under various Ar to O2 gas ratios to investigate the effect of O2 on the donor-acceptor compensation by comprehensive photoconductivity measurements supported by the PL studies. Initial elemental analyses indicate presence of abundant zinc vacancies (VZn) in O-rich ambience. The results predict that P sits in the zinc (Zn) site rather than the oxygen (O) site causing the formation of PZn–2VZn acceptor-like defects, which compensates the donor defects in P doped ZnO films. Photocurrent spectra uniquely reveal presence of more oxygen vacancies (VO) defects states in lower O2 flow, which gets compensated with an increase in the O2 flow. Successive photocurrent transients indicate probable presence of more VO in the films grown with lower O2 flow and more VZn in higher O2 flow. Overall the photosensitivity measurements clearly present that O-rich ambience expedites the formation of acceptor defects which are compensated, thereby lowering the dark current and enhancing the ultraviolet photosensitivity.  相似文献   
2.
The load applied to a machine tool feed drive changes during the machining process as material is removed. This load change alters the Coulomb friction of the feed drive. Because Coulomb friction accounts for a large part of the total friction the friction compensation control accuracy of the feed drives is limited if this nonlinear change in the applied load is not considered. This paper presents a new friction compensation method that estimates the machine tool load in real time and considers its effect on friction characteristics. A friction observer based on a Kalman filter with load estimation is proposed for friction compensation control considering the applied load change. A specially designed feed drive testbed that enables the applied load to be modified easily was constructed for experimental verification. Control performance and friction estimation accuracy are demonstrated experimentally using the testbed.  相似文献   
3.
Producing a stable and agile bionic eye for visual image acquisition in robotics is a challenging task. In this paper, we design a bionic eye with mirror-symmetric distribution and cross-connection of flexible ropes. This mechanism is based on oculomotor law and the physiological structure of the extraocular muscles (EOMs). Specifically, the basic structural parameters are determined by Listing’s law, and the unique connection of the flexible ropes can realize the functions of the recti and oblique muscles. Furthermore, to mimic the trochlea structure, a pulley mechanism is constructed to permit the free movement of the flexible ropes. Through simulation and physical experiments, it is demonstrated that the bionic eye mechanism can move with agility under the structural parameters. The experimental results indicate that the proposed bionic eye mechanism has a superior motion accuracy of 2.798 mm, which is 6.7% of the maximum motion distance, and the repeatable accuracy of the mechanism can up to 0.210 mm.  相似文献   
4.
为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4%,11.3%,10.4%和11.6%.  相似文献   
5.
For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2  cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.  相似文献   
6.
The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).  相似文献   
7.
《Microelectronics Journal》2015,46(11):1012-1019
This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm2 and 0.08 mm2, respectively.  相似文献   
8.
ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 1010 Wm?2 and the Si-based counterpart has lowest power density of order 106 Wm?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.  相似文献   
9.
论精神损害的国家赔偿责任   总被引:1,自引:0,他引:1  
国家的侵权行为造成相对人的精神损害应当承担赔偿责任是当今世界国家赔偿制度的发展潮流与趋势.确立精神损害的国家赔偿责任对社会公平正义的实现、人权的保护及促使国家公职人员依法行使职权具有重大的意义,因而应在基于我国国情的基础上,构建我国的精神损害国家赔偿制度.  相似文献   
10.
A 10Gbit/s recirculating system is configured with Chirped Fiber Bragg Grating (CFBG) for the dispersion compensation. For the first time, the transmission distance in the loop reaches 1000km with bit error rate of 10-9. The effect of the group delay ripple of the fiber grating is also investigated in the recirculating systems, and it is shown that the transmission distance is limited to 4 cycles (4×167.1km ) in the loop with the power penalty fluctuation below 1.0dB. Thus the group delay ripple should be reduced to allow for the wavelength drift of±5GHz. At the end of this letter, the principles are given for designing long haul recirculating systems with dispersion compensation CFBG.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号