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11.
The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).  相似文献   
12.
Harmonic elimination pulse width modulation (HEPWM) method has been widely applied to multilevel voltage source inverter (MVSI) to remove low frequency harmonics from its output voltage. However, the computation of the HEPWM switching angles for MVSI is very challenging due to several constraints, namely angle sequencing, very tight angular spacing and the numerous possibilities of angles distribution ratio. Realizing the potential of Differential Evolution (DE) to handle complex problems, this work proposes its application to solve the HEPWM problem for cascaded MVSI. Its emphasis is on improving the availability of HEPWM for higher output voltage by extending the maximum range of modulation index (M). It also removes the discontinuities in the switching angles and reduces the number of distribution ratio required to obtain the required solution. Compared to the most advanced (similar) work, i.e., 7-level MVSI with seventeen switching angles, DE covers a wider range of M; the maximum achievable M is 2.80. Furthermore, it exhibits very low second order distortion factor (DF2): for the worst case, the value of DF2 is 0.0014%. To verify the viability of the proposed algorithm, simulation is carried out and hardware prototype is constructed. Both results show very good agreement with the theoretical prediction.  相似文献   
13.
The topic of value creation through the recovery of returned products in closed loop supply chains is scattered across various bodies of literature. We undertake a systematic literature review of 144 articles in relevant green, reverse and closed loop supply chain literature to synchronize existing knowledge on value creation. Value manifestations of four types of value, namely economic, environmental, information and customer value, are identified. Value adding concepts from the forward- and reverse supply chain may leverage the process of value creation. They are classified into six subclasses, namely partnerships and collaboration, product design characteristics, service concepts, IT solutions, supply chain processes and organizational characteristics. We present a conceptual framework on a strategic level. In this way companies can create competitive advantages by closing the loop. The results of the literature analysis suggest avenues for future research on the operational and strategic level.  相似文献   
14.
In this investigation, the nature of the electrostatic discharge (ESD) that occurs when a charged object moves toward a stationary grounded object is experimentally clarified. The spark lengths, discharge currents, and induced voltages in a magnetic probe were measured when a charged metallic spherical electrode connected to a 422 pF capacitor approached a stationary grounded object, which was the current target, for different moving speeds of the charged metallic spherical electrode in a range of 1 mm/s to 100 mm/s. The charge voltages of the capacitor were +6.5 kV and +10 kV. Based on the results, the average gap length shortened with the speed of the spherical electrode. The average peak values of the discharge current and the induced voltage were likely to increase with the speed of the spherical electrode. The average rise times of the discharge current and the induced voltage were likely to drop with the speed of the spherical electrode. The relation between the spark length and the discharge current due to the ESD can be explained qualitatively by using an equation derived from the spark resistance formula proposed by Rompe and Weizel.  相似文献   
15.
《Microelectronics Journal》2015,46(11):1012-1019
This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm2 and 0.08 mm2, respectively.  相似文献   
16.
ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 1010 Wm?2 and the Si-based counterpart has lowest power density of order 106 Wm?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.  相似文献   
17.
杜新宇 《变频器世界》2006,(5):50-52,62
本文对焦炉煤气加压控制系统进行了分析,在焦炉煤气加压机控制系统中运用变频调速技术对其进行改造,从而实现煤气加压机运转的自动调节,有效地稳定了焦炉煤气母管压力,保证了安全运行,并且达到节约能源的效果。解决了两台鼓风机并列运行,靠调节回流阀无法实现压力恒定这个始终困扰焦炉生产的难题。  相似文献   
18.
Si纳米氧化线是构筑基于Si的纳米器件的基础。通过AFM针尖诱导阳极氧化加工的n型Si(100)的实验得到凸出的n型Si(100)氧化物高度和偏置电压成线性关系,与针尖扫描速度成负对数关系,并在前人的基础上深化了AFM针尖诱导氧化加工的机理和理论模型,得到了合适的加工条件为偏压8 V和扫描速度1μm/s。  相似文献   
19.
移动通信系统中功率控制研究   总被引:2,自引:0,他引:2  
李蕾 《信息技术》2006,30(11):83-85
在阐述功率控制在移动通信系统中的发展过程的基础上,着重研究了WCDMA系统的功率控制,最后对功率控制未来的研究方向做了简要的分析。  相似文献   
20.
2.4GHz动态CMOS分频器的设计   总被引:1,自引:0,他引:1  
对现阶段的主流高速CMOS分频器进行分析和比较,在此基础上设计一种采用TSPC(truesingle phase clock)和E-TSPC(extended TSPC)技术的前置双模分频器电路.该分频器大大提高了工作频率,采用0.6μm CMOS工艺参数进行仿真的结果表明,在5V电源电压下,最高频率达到3GHz,功耗仅为8mW.  相似文献   
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