High-Tg porous polyimide films with low dielectric constant derived from spiro-(adamantane-2,9′(2′,7′-diamino)-fluorene)

Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high-performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl-adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross-sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass-transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl-adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as-prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47313.     

Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition

The annealing effects on the structural and electrical properties of fluorinated amorphous carbon (a-C:F) thin films prepared from C₆F₆ and Ar plasma are investigated in a N₂ environment at 200 mTorr. The a-C:F films deposited at room temperature are thermally stable up to 250 °C, but as the annealing temperature is increased beyond 300 °C, the fluorine incorporation in the film is reduced, and the degree of crosslinking and graphitization in the film appears to be enhanced. At the annealing temperature of 250 °C, the chemical bond structures of the film are unchanged noticeably, but the interface trapped charges between the film and the silicon substrate are reduced significantly. The increased annealing temperature contributes the decrease of both the interface charges and the effective charge density in the a-C:F film. Higher self-bias voltage is shown to reduce the charge density in the film.     

有植被的河道水流紊动特性模型试验研究

通过物理模型试验,研究了有植被的河道水流紊动特性.试验结果表明,在复式断面河道滩地种植柔性植被后,滩地糙率增大,水流紊动更为剧烈,河道水流紊动强度峰值由原先的滩槽交界区转移到滩地区.滩地的水流紊动强度沿程递减;滩槽交界区的水流紊动强度沿程不断增大;主槽的水流紊动强度主要与床面糙率有关,滩地植被影响了滩地水流的归槽时间,使主槽水流流速沿程增大.     

Silicon for thin-film transistors

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.     

MD膜驱剂的粘土稳定性研究Ⅰ.静态试验

粘土的膨胀和分散是引起地层伤害的两个重要因素。通过测定Zeta电位、XRD、悬浮液透光率、FT-IR考察了MD膜驱剂（MDFFA）对粘土稳定性的作用。结果表明，MDFFA的浓度低于0．3 mmol／g（以蒙脱土质量计）时，蒙脱土悬浮液Zeta电位的提高是由于膜驱剂分子的吸附改变了蒙脱土的层电荷；高于此浓度时，Zeta电位进一步提高是由于双电层的压缩。随着MDFFA浓度的增大，蒙脱土的完全膨胀层向部分膨胀层转化，并且经水冲洗、浸泡后，其XRD谱峰位置变化不大。较高浓度的MDFFA，能有效地抑制蒙脱土的分散，且不会形成对地层有害的絮凝体。MDFFA使蒙脱土层间水的含量明显降低。     

多区双重介质复合气藏渗流数学模型及其压力动态

四川盆地大多数气藏属于裂缝孔隙型气藏,气藏非均质性强.经典的径向均质复合试井解释模型与气藏实际情况不相符,解释结果与实际地质情况出现抵触现象.针对这种情况,建立了多区双重孔隙介质复合地层模型,求得了该模型的拉氏空间解,分析了其典型的压力动态特征,并对影响因素可能对曲线产生的影响进行了分析.     

对CFG桩质量缺陷的探讨

根据具体工程的概况及水文地质条件，分析了CFG桩在地下水位出现大面积缩颈现象和复合地基载荷试验达不到设计要求的原因，并介绍了地基补强措施，以满足工程质量的要求。     

Development of a safety critical software requirements verification method with combined CPN and PVS: a nuclear power plant protection system application

Safety-critical software systems such as certain nuclear instrumentation and control (NI&C) systems should be developed with thorough verification. This study presents a method of software requirement verification with a case study for a nuclear power plant (NPP) protection system. The verification introduces colored petri net (CPN) for system modeling and prototype verification system (PVS) for mathematical verification. In order to aid flow-through from modeling by CPN to mathematical proof by PVS, an information extractor from CPN models has been developed in this paper. In order to convert the extracted information to the PVS specification language, a translator has also been developed. This combined method has been applied to the functional requirements of the Wolsong NPP Shut Down System #2 (SDS2); logical properties of the requirements were verified. Through this research, guidelines and a tool support for the use of formal methods have been developed for application to NI&C software verification.     

新型高K栅介质ZrO2薄膜材料的制备及表征

采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm.