多晶硅太阳电池用SiN薄膜的研究进展

SiN薄膜因为具有良好的减反射性质和钝化作用，已经越来越广泛地应用于多晶硅太阳电池的制造工艺中，介绍了SiN薄膜在硅太阳电池中的性质，制备方法等研究现状，同时提出了存在的问题并展望了今后的发展趋势。     

用于微波/射频集成电路的一种新型低损耗介质——多孔硅及氧化多孔硅厚膜

提出在单片微波集成电路(MMIC)中用多孔硅/氧化多孔硅厚膜作微波无源器件的低损耗介质膜.研究了厚度为70μm的多孔硅/氧化多孔硅厚膜在低阻硅衬底上的形成,这层厚膜增加了衬底的电阻率,减少了微波的有效介质损耗.通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线(CPW)的微波特性.     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

原位TiCp/Fe复合材料的切削力及切屑形状

从退火态原位TiCp／Fe复合材料的切削力和切屑形状方面分析了其切削性能。研究结果表明其切削力及切削力的波动范围都小于铸态45钢，其切削性能比45钢好。TiCp／Fe复合材料的切屑为C形屑、长紧卷屑和发条状卷屑，在机加工中，产生这几种切屑是比较理想的。从切屑方面看，TiCp／Fe复合材料的切削性能较好。     

High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route

Single-crystalline 3C-SiC nanowires have been synthesized in large scale through a one-step autoclave route by the reaction of SiCl₄, (C₅H₅)₂Fe and metallic Na at 500 °C. Electron microscopy investigations show that the nanowires have typical diameters of 15-50 nm, lengths up to several tens of micrometers and grow along the [111] direction. The possible growth mechanism of the nanowires is discussed.     

浦项开发35W270以上牌号无取向硅钢

钢中加Sn和Sb得到优良的磁性，铁损低和磁感高。与加B的比较，晶粒大，立方织构、高斯织构、（100）[uvw]纤维体积份数很高和γ-纤维体积份数很低，增加磁感的磁各向异性和降低铁损的磁各向异性。进行常化与未经常化的比较，最终晶粒大。（100）纤维份数：热轧板的最低，冷扎后变成最高。铁损的各向异性与织构因数之间成反比，磁感的各向异性与织构因数之问成正比。开发出了35W270-250高牌号无取向硅钢。     

Austenitizing treatment influence on the electrochemical corrosion behavior of 0.3C-14Cr-3Mo martensitic stainless steel

Effects of austenitizing treatment temperatures on aqueous corrosion properties of martensitic stainless steels were investigated by electrochemical tests (potentiodynamic test, potentiostatic test and electrochemical impedance spectroscopy), and surface analyses (optical microscopy and XRD). The results of potentiodynamic test revealed that the breakdown potential increased with the increased austenitizing temperature, indicating increased relative resistance to initiation of localized corrosion. EIS measurements showed that MSS3 (1030 °C) exhibits larger polarization resistance value than MSS1 (970 °C) and MSS2 (1000 °C) at passive and breakdown states. This was caused by decreasing the amount of Cr-rich M₂₃C₆ carbide which acts as preferential sites for pitting corrosion.     

Flash-lamp annealing of semiconductor materials—Applications and process models

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.     

晶体硅薄膜电池制备技术及研究现状

晶体硅薄膜太阳电池近些年来得到广泛的研究和初步的商业化探索。根据所采用的晶体硅薄膜沉积工艺中温度范围的不同，晶体硅薄膜电池研究可分为高温路线和低温路线两个不同发展方向。本文分别从这两个方向综述了目前国外晶体硅薄膜电池制备技术的最新进展，最新实验室研究结果。报导了晶体硅薄膜电池商业化进展状况，指出了晶体硅薄膜电池实现产业化必须解决的问题。     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。