航空物探试验场地面地球物理场特征分析

航空地球物理探测技术是地质和矿产勘查的重要手段,其探测能力主要取决于测量系统及测量方法的有效性,而测量系统及测量方法有效性的提高,又需要专业的检验平台(航空物探试验场)。因此,在我国建立专业的航空物探试验场十分必要。本文搜集了我国某航空物探试验场的地质地球物理资料,在试验场设计并完成了重力、电阻率测深、瞬变电磁工作。通过对实测资料的处理和研究,将试验场划分为三个大的异常区,确定了试验场内的两个较大的断裂和一个次级断裂。本文在国内首次以专项工作的方式为航空重力及电磁法测量提供了高精度的参考数据,从而为国内航空地球物理测量系统检验和方法研究提供了综合平台。并且通过多种物探方法建立标准场的实践认识到,通过有效的选址,在充分利用已有的地质、地球物理(地面、航空)及测绘等资料的基础上,可以完善建成综合试验场,为航空物探飞行测量提供可靠的高精度对比资料。     

复电阻率法(CR)在铜钼矿勘查中的应用效果

复电阻率法是以岩矿石的频谱或时谱特性差异为研究基础,本文简要介绍了复电阻率法的基本原理和本方法可以通过柯尔—柯尔模型计算得出的几个视谱参数及其意义。然后介绍了复电阻率法在安徽某铜钼矿勘查中的具体应用,并以其中一条工作剖面为例,简要介绍了本次工作所取得的一些成果,并且在后期的钻井工作中验证了此次复电阻率法工作中推测的一些地质体、地质构造的位置、深度信息是较为准确的。由此得出在地质找矿工作中综合考虑与岩矿石极化物质成分和结构有关的时间常数和频率相关系数等多个视谱参数,可以减少多解性,提高地质解释水平和工程验证见矿率。     

北京地区浅层采空区高密度电法探测应用分析

高密度电法已广泛应用于煤层采空区探测之中,采空区充填性质的不同造成其在高密度电法数据剖面中的表现特征也不相同。本文主要介绍运用高密度电法进行浅层小煤窑采空区探测的一些经验和案例。采用高密度电法中的温纳装置对门头沟地区未充填、部分充填的小煤窑巷道和石景山区富水充填的小煤窑采空区的探测,取得了很好的效果。探测结果显示,未充填和部分充填的小煤窑巷道表现为高视电阻率异常,位置与测线周边发现的小煤窑窑口位置相对应。而富水充填的小煤窑采空区表现为低视电阻率异常,经钻探验证,采空区内充填有富含水的粉末状的煤灰,含坑木。需注意在山区进行高密度电法测试时,台阶状的地形对高密度电法测试的干扰影响较大,以温纳装置为例,测试数据在台阶地形处表现为高低阻相邻的八字形干扰,且电极距越小,干扰越明显。     

综合物探技术在煤矿巷道底板富水区勘探中的应用效果分析

徐州市西北地区山西组7;煤开采受底板L4灰岩影响,易发生底板突水事故,为了迅速达到疏水释压效果,需综合利用超高密度电法和矿井瞬变电磁法物探手段对某工作面巷道底板进行探测,圈定相对富水区,探测结果表明,超高密度电法在垂向上较好解释了巷道底板下L4灰岩界面起伏形态,瞬变电磁法在横向上较好解释了L4灰岩富水区,成果经排水孔验证,效果理想,达到探测目的.     

基于裂缝柔度和地应力模型的声电测井正、反演方法及应用

电阻率成像探测深度通常为几厘米,超声波成像数据也只能提供井壁的声幅或到时图像。因此,很难评估井壁张开裂缝在地层中的分布情况。声波测井一般应用弹性各向异性表征地应力场和裂缝特性等,通常岩石的固有各向异性、高角度地层层面、裂缝或不平衡应力挤压等都可以导致弹性波表观各向异性,因此往往难以判断各向异性的成因。前人针对单一方位二维裂缝模型进行了声波正演模拟,但不适用于井筒含多组任意方位裂缝介质的弹性波模拟。为此,首先拾取井壁成像测井中导致声波表观各向异性的三类结构特征(天然裂缝、层面缝(或薄层)和钻井应力诱导缝)信息,同时定量化层理结构信息(如倾向、方位等),并将裂缝分层、分组;然后从声波全波列中提取地层的快、慢横波慢度及各向异性方位;接着在岩石和裂缝信息井壁成像建模基础上,通过裂缝附加柔度模型、层面伪裂缝模型和非线性应力场弹性波动理论正演模拟岩石的声波属性;最后通过对比声波速度及各向异性方位等信息的模型预测结果与实测结果,利用最小误差拟合反演确定井壁图像表征的裂缝类型与各向异性的成因,并对比、分析了频散曲线特征。将所提方法应用于花岗岩潜山裂缝型气田生产测试井以验证方法合理性,实际模拟结果表明：...     

Effect of AlN addition on the electrical resistivity of pressureless sintered SiC ceramics with B4C and C

The effect of 0–12 wt% AlN addition on the electrical resistivity of SiC ceramics pressureless sintered with 0.7 wt% B₄C and 2.5 wt% C additives was investigated. The elemental analysis of SiC grains revealed a codoping of Al and N in the SiC lattice with a higher N concentration with 1 wt% AlN addition and a higher Al concentration with 12 wt% AlN addition. The electrical resistivity decreased by four orders of magnitude (1.7 × 10⁵ → 8.3 × 10¹ Ω cm) with 1 wt% AlN addition due to the increased carrier density (1.7 × 10¹⁰ → 2.3 × 10¹⁵ cm⁻³) caused by excess N-derived donors. However, subsequent AlN addition (4 → 12 wt%) led to an increase (2.9 × 10³ → 1.2 × 10⁴ Ω‧cm) in electrical resistivity due to (1) increased Al dopants which act as deep acceptors for trapping N-derived carriers causing a decrease in carrier density (2.3 × 10¹⁵ → 5.9 × 10¹³ cm⁻³), (2) the formation of electrically insulating SiC-AlN solid solution, and (3) the presence of electrically insulating AlN grains at the grain boundaries.     

Cu-3.2Ni-0.75Si-0.30Zn合金时效过程的动力学分析

通过研究时效过程中电阻率的变化规律 ,分析了Cu 3.2Ni 0 .75Si 0 .30Zn合金的时效析出特性及其动力学过程。结果表明 :低温时效时扩散作用是合金析出过程的主要控制因素 ,时效早期通过调幅分解形成溶质原子的富集区 ,然后在溶质富集区发生失稳有序化 ,最后生成δ Ni2 Si相 ;高温时效时相变驱动力成为主要控制因素 ,由于生成δ Ni2 Si相的驱动力较大 ,所以直接析出δ Ni2 Si相。结合透射电镜研究了合金时效过程中显微组织的变化 ,并得出了合金的时间—温度—转变曲线 (即TTT曲线 )。     

Infrared heat treatment of Ti-6Al-4V with electroplated Cu

The objective of this study is to investigate an innovative infrared (IR) technique to enhance adhesion of electroplated copper (Cu) on Ti-6Al-4V without dichromate dipping. The ultimate goal is to develop a Cu coating process on Ti-6Al-4V without hazardous hexavalent chromium (Cr) solution treatments. Cu coatings of around 50 μm were electroplated on Ti-6Al-4V specimens at a current density of 0.03 A/cm² in an acidic Cu solution. To improve adhesion of coatings, IR heat treatments were performed on the Cu-coated samples at different temperatures and durations: 860 °C for 600 s and 875 °C for 20–120 s. This process was accomplished in an attempt to replace the use of dichromate dipping before electroplating. For samples heat treated at 860 °C, no bonding existed, even after 600 s. It is believed that solid-state diffusion prevailed at 860 °C and that 600 s was not enough for sufficient diffusion to occur. Adhesion was poor when samples were heat treated at 875 °C for 20 s. Excellent adhesion was observed when the heat treatment holding time was increased to 40 s. For 90 s, the surface appearance of coatings partially changed from Cu-colored to a grayish color. There was no Cu left on the surface after a 120 s heat treatment. From optical microscopic observations on sample cross sections, an interlayer between the Cu and Ti-6Al-4V formed when heat treated at 875 °C for 40 s and longer. The interlayer thickness increased as the holding time increased, until depletion of Cu. The sheet resistivity of coated specimens was on the order of pure Cu for samples heat treated at 875 °C and less than 90 s. During the 875 °C heat treatment, the following occurred: solid-state diffusion of Cu in Ti-6Al-4V, formation of eutectic solutions, dissolution of Cu and Ti-6Al-4V into the liquid phase, and the formation of intermetallic compounds. The lowest eutectic temperature of 875 °C played a key role in this innovative process of Cu coating on Ti-6Al-4V. This paper was presented at the 2nd International Surface Engineering Congress sponsored by ASM International, on September 15–17, 2003, in Indianapolis, Indiana and appears on pp. 403–10 of the Proceedings.     

纯Ar气氛中退火对Al掺杂ZnO薄膜性能的影响

用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO(ZAO)薄膜,并对薄膜在纯氩气中进行了400～600℃的退火处理.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究.研究表明,纯氩气中退火处理对ZAO薄膜的晶体、光学和电学性能有影响.原位沉积的薄膜电阻率2.59Ωcm,可见光区透过率约70%.500℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力达到最小,接近于松弛状态;薄膜可见光区平均透过率从70%提高到80%左右;而薄膜的电阻率变化不明显,从2.59Ωcm降低到1.13Ωcm.     

THE EFFECTS OF SPUTTERING POWER ON STRUCTURE AND ELECTRICAL PROPERTIES OF Cu FILMS

1. IntroductionCu filnls are very pron1isillg for electronic devices because of both high electromigrationresista11ce alld high electrical conductivity['--']. For a sputter-deposited film, base pressure,deposition rate, substrate temperature and energetic…