较大直径、低位错锑化铟单晶的研制

本文简要介绍了用ＴＤＫ－３６单晶炉拉制的较大直径（φ＝２５ｍｍ）、低位错（＜１００ｃｍ￣（－２））的锑化铟单晶的理论和实践。通过对晶体生长室内温场，特别是内外坩埚尺寸的调整及对循环水流量的控制，成功地拉制出较大直径、低位错的锑化铟单晶。     

单液晶光阀彩色大屏幕投影显示

设计一电路,将彩色图象信息编码到黑白CRT的亮度之中,并将其写入液晶光阀,用白光读出,当编码合适时,读出的象颜色可与原图像一致。本文讨论了这一技术原理并进行了单液晶光阀彩色大屏幕投影的实验验证。     

压电晶体Al1—xGaxPO4的生长及其特性

用缓慢升温法成功研制出非铁电性二元系压电新晶体Ａｌ０．８８Ｇａ０．１２ＰＯ４，通过原子光谱吸收，Ｒｕｔｈｅｒｆｏｒｄ背散射及Ｘ射线粉末衍射测定其组分结构，并给出了新晶体和电弹常数和温度系数。     

Thermal properties and crystalline structure of liquid crystalline poly(ethylene terephthalate‐co‐2(3)‐chloro‐1,4‐phenylene terephthalate)

Thermal properties and crystalline structure of liquid crystalline (LC) poly(ethylene terephthalate‐co‐2(3)‐chloro‐1,4‐phenylene terephthalate) [copoly(ET/CPT)] were investigated using differential scanning calorimetry (DSC), thermogravimetry (TGA), limiting oxygen index (LOI) measurement, electron dispersive X‐ray analysis (EDX), X‐ray diffractometry, and infrared spectrometry (IR). The thermal transition temperatures of copoly(ET/CPT) were changed with the composition. Copoly(ET/CPT) showed two thermal decomposition steps and the residues at 700°C and LOI values of copoly(ET/CPT) were almost proportional to its chlorine content. The activation energy of thermal decomposition of LC units was very low compared to that of poly(ethylene terephthalate)(PET) units. Crystal structure of copoly(ET/CPT) (20/80) was of triclinic system with the lattice constants of a = 9.98 A?, b = 8.78 A?, c = 12.93 A?, α = 97.4°, β = 96.1°, and γ = 90.8°, which is very close to that of poly(chloro‐p‐phenylene terephthlate) (PCPT) with the lattice constants of a = 9.51 A?, b = 8.61 A?, c = 12.73 A?, α = 96.8°, β = 95.4°, and γ = 90.8°. When copoly(ET/CPT)(50/50) was annealed at 220°C in vacuum, crystallization induced sequential reordering (CISR) was not observed but the heat of fusion was slightly increased due to the increase of the trans isomer content in PET units. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 84: 1286–1294, 2002; DOI 10.1002/app.10451     

同时含有稀土元素La Ce Pr Nd的材料的电子探针定量分析方法

研制了稀土六硼化物单晶LaB_6、CeB_6、PrB_6和NdB_6电子探针分析标样。根据X-射线峰位表和实测的特征X-射线谱,考察分析了La、Ce、Pr和Nd元素谱线之间的干扰情况,发现分析谱线PrLα_1受到L_αLβ_1线严重的干扰。以混合稀土金属为试样,采用扣除谱线重叠强度的背底非对称测量等方法对L_n、Ce、Pr和Nd进行了电子探针定量分析,其结果与荧光X-射线光谱分析结果符合较好。     

分子束外延CdTe（211）B／GaAs（211）B的特性研究

ＣｄＴｅ／ＧａＡｓ是ＨｇＣｄＴｅ分子束外延的重要替代衬底材料。用Ｘ双晶衍射和光致发光测试研究了分子束外延生长的ＣｄＴｅ（２１１）Ｂ／ＧａＡｓ（２１１）Ｂ的晶体结构质量，表明外延膜晶体结构完整，具有很高的质量。用高分辨率的透射电镜研究其界面特性，观察到ＣｄＴｅ（２１１）Ｂ相对于ＧａＡｓ（２１１）Ｂ向着［１１１］方向倾斜一个小角度（约３°），界面的四面体键网发生扭曲，由于晶格失配，在界面存在很高的失配位错密度。用二次离子质谱分析仪分析了ＧａＡｓ衬底中的Ｇａ和Ａｓ向ＣｄＴｅ外扩散的情况。结果表明：如果要在ＧａＡｓ衬底上生长ＨｇＣｄＴｅ外延膜，必须先生长一层具有一定厚度的ＣｄＴｅ来阻止Ｇａ和Ａｓ向ＨｇＣｄＴｅ的外扩散和失配位错的延伸。     

Effect of praseodymium substitution on the growth and properties of Y1−x Pr x Ba2Cu3O7−δ (o <x < 0·4) single crystals

In the present paper, a modified self-flux technique has been successfully employed for the growth of pure and praseodymium substituted (partially) large single crystals of high temperature superconducting Y_1−x Pr _x Ba₂Cu₃O_7−δ (x = 0·0,0·2,0·4). Typical sizes of the platy and bulky crystals of pure YBCO(123) material are ≈ 2 × 2 × 0·1 mm³ and 4 × 1 × 1 mm³, respectively. In case of Pr-substitution, the typical sizes of platy and bulky crystals of Y_0·8Pr_0·2Ba₂Cu₃O_7−δ and Y_0·6Pr_0·4Ba₂Cu₃O_7−δ materials are ≈ 2 × 3 × 0·1 mm³ and 5 × 1 × 1 mm³ and ≈ 1 × 1·5 × 0·1 mm³ and 7 × 0·2 × 0·1 mm³, respectively. The morphology and growth habit of the as-grown single crystals and the critical transition temperature (T _c) of the oxygenated crystals were found to depend on the Pr-content. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a...     

定向结晶时高温合金组织控制的工艺前景EI

报道了俄国航空材料研究院(ВИАМ)在定向单晶高温合金组织控制方面的最新研究成果,例如,利用高速定向结晶工艺创造具有单晶组织的宽弦叶片,以及制造前后缘为规定位相的单晶,而在叶身中部为细柱状定向结晶组织的复合组织叶片。这些新工艺提高了材料的工作能力和发动机寿命。     

Investigation of LNA lasers operating in high average power

给出了铝酸镁镧（ＬＮＡ）激光晶体在重频脉冲运转下的激光特性，一根６ｍｍ×１１６ｍｍ的ＬＮＡ晶体在脉冲氙灯泵浦下，采用高重频脉冲工作方式，激光平均输出功率达到８６６Ｗ，斜效率２５％。