Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

p型碲镉汞液相外延材料Ag掺杂的研究

利用SIMS和变温霍尔测量手段对P型Hg0.77Gd0.23Te液相外延材料的Ag掺杂技术、机理及掺杂碲镉汞材料的性能进行了研究。结果表明采用AgNO3溶液直接浸泡方式对该材料进行掺Ag是成功的，掺杂浓度与被掺杂材料中的汞空位浓度是一致的，掺杂后，P型碲镉汞材料的受主能级比掺杂前有明显的减小，从实验结果可看到掺Ag碲镉汞材料的电学性能在室温下保持稳定。     

飞行时间二次离子质谱--强有力的表面、界面和薄膜分析手段

二次离子质谱（Secondary ion mass spectrometry，简称SIMS）是一种对表面灵敏的质谱技术，建立在表面各种类型带正、负电荷原子或分子发射的基础上。用飞行时间（Time of flight，简称TOF）仪器对这些二次离子进行质量分析，能确保并行质量登录、高质量范围、高流通率下的高分辨和精确质量测定这些优异性能。配合细聚焦扫描一次离子束，可在优于1nm的高深度分辨和优于50nm的横向分辨本领下，实现对表面优于单层ppm(百万分之一）量级的极高检测灵敏度。当今TOF－SIMS已发展为一种成熟且完善的表面分析技术。极高的灵敏度，再加上即使对大分子及不易挥发性分子都独具的敏感性，使它成为很多高技术领域不可缺少的分析手段，这些领域包括微电子学、化学和材料科学以至纳米技术和生命科学等。本文简述了TOF－SIMS的原理、仪器及其多方面的应用和展望。     

不同剂量BF^＋2注入多晶硅栅氟迁移特性的二次离子质谱分析

借助ＳＩＭＳ技术，系统地分析了８０ＫｅＶ，２．５×１０１４、５×１０１４、１×１０１５、２×１０１５和３×１０１５ｃｍ－２ＢＦ＋２注入多晶硅栅在９００℃、３０ｍｉｎ热退火条件下，氟在多晶硅栅中的分布剖面，并对氟在多晶硅和二氧化硅中的迁移特性进行了深入讨论。     

Development of enhanced depth-resolution technique for shallow dopant profiles

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10⁻³ energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As⁺ implanted Si or SiO₂ samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.     

铜互连中SiCOF/a-C∶F双层低介电常数薄膜的制备和表征(英文)

用等离子体化学气相淀积系统制备了一种新颖的SiCOF/a-C∶F双层低介电常数介质薄膜,并用红外光谱表征了该薄膜的化学结构.通过测量介质的折射率发现该薄膜长时间暴露在空气中,其光频介电常数几乎不变.然而,随退火温度的增加,其光频介电常数则会减小.基于实验结果讨论了几种可能的机理.二次离子质谱分析表明在Al/a-C∶F/Si结构中F和C很容易扩散到Al中,但在Al/SiCOF/a-C∶F/Si结构中,则没有发现C的扩散,说明SiCOF充当了C扩散的阻挡层.分析还发现在SiCOF和a-C∶F之间没有明显的界面层.     

分子束外延CdTe（211）B／GaAs（211）B的特性研究

ＣｄＴｅ／ＧａＡｓ是ＨｇＣｄＴｅ分子束外延的重要替代衬底材料。用Ｘ双晶衍射和光致发光测试研究了分子束外延生长的ＣｄＴｅ（２１１）Ｂ／ＧａＡｓ（２１１）Ｂ的晶体结构质量，表明外延膜晶体结构完整，具有很高的质量。用高分辨率的透射电镜研究其界面特性，观察到ＣｄＴｅ（２１１）Ｂ相对于ＧａＡｓ（２１１）Ｂ向着［１１１］方向倾斜一个小角度（约３°），界面的四面体键网发生扭曲，由于晶格失配，在界面存在很高的失配位错密度。用二次离子质谱分析仪分析了ＧａＡｓ衬底中的Ｇａ和Ａｓ向ＣｄＴｅ外扩散的情况。结果表明：如果要在ＧａＡｓ衬底上生长ＨｇＣｄＴｅ外延膜，必须先生长一层具有一定厚度的ＣｄＴｅ来阻止Ｇａ和Ａｓ向ＨｇＣｄＴｅ的外扩散和失配位错的延伸。     

The use of the stable isotope 44Ca in studies of calcium incorporation into dentin

The incorporation into rat incisor dentin of two calcium isotopes, the stable ⁴⁴Ca and the radioactive ⁴⁵Ca, was studied using secondary ion mass spectrometry (SIMS) stepscanning and imaging, and autoradiography, respectively. The results demonstrated a time-dependent incorporation of the calcium isotopes into the mineral phase of dentin. With the SIMS step-scanning, detecting ⁴⁴Ca, the ion yield was high in the odontoblasts 2 min after intravenous injection. After 10 min a marked increase in signal intensity was found at the dentin mineralization front. This result was consistent with those obtained by ⁴⁵Ca autoradiography; a peak of incorporation occurred 10 min after injection of the isotope. Likewise, localization of ⁴⁴Ca to the mineralization front could be demonstrated 10 min after injection by SIMS imaging. In images obtained at earlier intervals, no such increase in ion yield could be detected. The results show that the nonradioactive, stable isotope ⁴⁴Ca can be used as a marker for biomineralization in a similar way to radioactive ⁴⁵Ca.     

Al原子在非晶合金Fe78Si9B13中的扩散

利用二次离子质谱(SIMS)并结合离子剥落研究了Al原子在非晶Fe_(78)Si_9B_(13)合金中的扩散。实验结果表明:在320-380℃温区内,扩散系数D位于2.43×10~(-22)-2.01×10~(-21)m~2s~(-1)之间,且它随温度的变化符合Arrhenius关系,D=D_0 exp(-Q/kT),其中指数前因子D_0=2.02×10~(-12)m~2s~(-1)。扩散激活能Q=1.17eV。     

Enhanced oxidation of the 9%Cr steel P91 in water vapour containing environments

The short term (∼100 h) oxidation behaviour of the 9%Cr steel P91 was studied at 650 °C in N₂-O₂-H₂O gas mixtures containing a relatively low oxygen level of 1%. The oxidation kinetics were measured thermogravimetrically and the oxide scale growth mechanisms were studied using H₂¹⁸O-tracer with subsequent analyses of oxide scale composition and tracer distribution by MCs⁺-SIMS depth profiling. The corrosion products were additionally characterised by light optical microscopy, SEM-EDX and XRD. It was found that the transition from protective, Cr-rich oxide formation into non-protective mixed oxide scales is governed by the ratio H₂O^(g)/O₂ ratio rather than the absolute level of H₂O^(g). The results of the tracer studies in combination with the data obtained from experiments involving in situ gas changes clearly illustrated that under the prevailing conditions the penetration of water vapour molecules triggers the enhanced oxidation and sustains the high growth rates of the poorly protective Fe-rich oxide scale formed in atmospheres with high H₂O^(g)/O₂ ratios. The experimental observations can be explained if one assumes the scale growth to be governed by a competitive adsorption of oxygen and water vapour molecules on external and internal surfaces of the oxide scales in combination with the formation of a volatile Fe-hydroxide during transient oxidation. The formation of the non-protective Fe-rich oxide scales is suppressed in atmospheres with low H₂O^(g)/O₂ -ratios, and the healing of any such scale is promoted.