硫脲树脂对Cu~(2+)吸附性能研究

考察了不同吸附时间、pH值和吸附温度下,聚对苯甲酰基硫脲树脂和聚酯基硫脲树脂对Cu2+的吸附性能影响;并对吸附动力学和热力学进行了研究。     

Ion implantation effect on atomic structure of deformed Si, Ir, W, Ni and Cu

It has been revealed, that in Ir subjected to severe plastic deformation, an ultrafine grained structure (UFG) is formed (the grain size of 20-30 nm). Practically no defects have been detected within the grains, while, in the case of Ar⁺ implantation, the subgrain structure with characteristic sizes of about 3-5 nm is formed; defects have been detected within subgrains.The subgrain structure was also revealed in UFG Ni and Cu after severe plastic deformation (SPD) (subgrain size of 3-15 nm), but in the latter case the observed boundary region is broader and subgrain is highly disoriented.     

Diffusion-controlled size-selective chloride ion sensing in the presence of bromide ion using a thin, nanoporous, plasma-polymerized coating on an Ag/AgCl electrode

We have developed a diffusion-controlled size-selective method for sensing chloride ion in the presence of bromide ion, based on a thin, nanoporous, plasma-polymerized coating of hexamethyldisiloxane on an Ag/AgCl electrode. Sub-nanometer-sized pores responsible for a highly cross-linked polymer network in the plasma-polymerized coating allowed diffusion-controlled permeation of chloride ion while blocking the larger bromide ion. An electrode coating of thickness greater than 70 nm enabled chloride detection in the concentration range 1-10 mM in the presence of 0.63 mM bromide ion. Advantages of this approach are: (1) simple design compared with ionophore-based strategies and (2) compatibility with microfabrication and mass production processes.     

Secondary ion emission from Ti and Si targets induced by medium energy Ar ion bombardment - Experiment and computer simulation

The paper presents experimental results of secondary ion energy distributions obtained for Ti and Si targets bombarded by 20-30 keV monoisotope Ar⁺ ion beam. The influence of the extraction voltages between target and a slit of the electrostatic energy analyzer entrance on the energy distributions of secondary ions was investigated. After optimization of the secondary ion extraction system, the mass spectra of secondary ions were also measured. The investigations were done using recently built experimental system. Experimental data are compared with the computer simulation results obtained using TRQR and SATVAL codes.     

等离子体浸没离子注入和沉积技术制备TiN薄膜研究

利用多功能等离子体浸没离子注入设备 ,采用等离子体浸没离子注入和沉积技术在Ti合金表面制备具有优异力学性能的TiN薄膜。研究了真空室中氮气存在状态及氮气压力对薄膜性能的影响 :当氮以中性气体存在于真空室中 ,薄膜的生长主要受热力学因素控制 ,沿着低自由能的密排面 (低指数面 )TiN(1 1 1 )择优生长 ;当氮以等离子体状态存在于真空室中 ,薄膜沿着高指数面TiN(2 2 0 )择优生长 ,具有高硬度、耐磨性好的优点 ,并且随着N分压的提高 ,薄膜耐磨性提高     

用FEM/FIM研究单壁碳纳米管束

利用范氏力将单壁碳纳米管样品组装到钨针尖上 ,用FEM/FIM对同一碳纳米管样品用热处理方法和场脱附方法进行了研究。场离子显微镜是具有原子级分辨能力的尖端表面分析工具 ,由场离子像推测这次组装的样品是由三根单壁碳纳米管突起组成的碳纳米管束。清洁碳纳米管束样品的场发射像和场离子像有极好的对应关系。场脱附后的碳纳米管束的场发射特性较好地符合Fowler Nordheim场发射模型。通过比较碳纳米管束吸附态和热处理后以及场脱附后的Fowler Nordheim曲线的斜率变化 ,得出碳纳米管束样品逸出功的变化 ,再结合场发射像的变化推断出场脱附与热处理结合是一种较理想的获得清洁碳纳米管表面的方法     

钼酸铵溶液深度净化工艺探索

对传统的钼酸铵溶液净化工艺及文献介绍工艺进行了较为详细的分析 ,并与实验数据对比分析 ,找到了较为合理的工艺方案     

室温离子注氢CeO2的微结构及价态研究

利用高分辨透射电子显微镜(HRTEM)及电子能量损失谱(EELS)对室温下注入氢离子的CeO2烧结体的显微组织结构和价态进行了原位观察和分析。结果表明：室温注氢，虽可以使严重损伤区内氧的状态发生明显改变，却不能引起CeO2的相转变及Ce的价态改变；这一结果可能与氢离子因尺寸太小不能占据CeO2的正常格点位置从而无法有效形成氧空位以及室温下CeO2中Ce和O的扩散比较困难等因素有关。     

腐蚀环境中海工混凝土抗氯离子侵蚀性

模拟我国南方沿海浪溅区和水位变动区的海工钢筋混凝土结构物的腐蚀环境，对掺入粉煤灰和矿渣的混凝土抗氯离子侵蚀性进行了试验。结果表明，在水灰比相同的条件下，加掺和料的混凝土抗氯离子侵蚀性高于普通混凝土。     

用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算

利用二次离子质谱和扩展电阻探针技术测量了硅中注入硼的深度分布 .在适当的测量深度 ,用扩展电阻探针技术测得的结果对二次离子质谱技术测量的结果进行了标定 ,从而得到硅片中硼原子的深度分布 .用近似模型估算了扩展电阻探针针尖半径对测试分辨率的影响 .若探针针尖半径为r0 ,测量斜面的角度为 ξ ,在用扩展电阻探针技术测量载流子浓度的深度分布时 ,可以近似认为深度分辨率为 7 86r0 sinξ.还定性讨论了样品表面耗尽层对扩展电阻探针技术的影响.