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Normal distribution is widely used in every fields,especially in microelectronics.Itis apopular tool in microelectronics reliability study.The characteristic parameters,μ andσ,are key to this distribution.Some estimate methods,such... 相似文献
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The degradation of MOSFETs under high field stress has been investigated for a long time. The degradation is due to the newly generated traps. As the gate thickness scaled down rapidly, a conventional method for detecting oxide traps, such as C-V or subthreshold swing, is no longer effective. Some new phenomena also appear, such as Stress Induced Leakage Current (SILC) and soft-breakdown. The oxide traps' behavior and their characteristics are the key problems in the study of degradation. By extracting the change of transition coefficients from the I-V curve and using the PDO (Proportional Differential Operator) method, various oxide traps can be distinguished and as would be helpful in the determination of trap behavior changes during the degradation process. 相似文献
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利用FN电流估计薄栅MOS结构栅氧化层的势垒转变区的宽度 总被引:2,自引:2,他引:0
通过数值求解整个势垒的薛定谔方程 ,发现 FN电流公式中的 B因子强烈依赖势垒的转变区的宽度 ,而 C因子则弱依赖于势垒的转变区的宽度 .给出了一种利用 WKB近似所得的处理电子隧穿存在转变区势垒的过程 ,并得到一个 FN电流的分析表达式 .它可用来估计薄栅 MOS结构的栅氧化层的势垒转变区的宽度 .在转变区的宽度小于 1nm时 ,它与数值求解薛定谔方程的结果吻合得很好 ,表明该方法可以用来估计势垒转变区的宽度 .实验的结果表明 B因子随温度有较大的变化 ,这个结果验证了该方法的部分预测结果 相似文献
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随着器件尺寸的迅速减小,直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素.根据比例差值算符理论和弛豫谱技术,针对直接隧穿应力下超薄栅MOS结构提出了一种新的弛豫谱--恒压应力下的直接隧穿弛豫谱(DTRS).该弛豫谱保持了原有弛豫谱技术直接、快速和方便的优点,能够分离和表征超薄栅MOS结构不同氧化层陷阱,提取氧化层陷阱的产生/俘获截面、陷阱密度等陷阱参数.直接隧穿弛豫谱主要用于研究直接隧穿注入的情况下超薄栅MOS结构中陷阱的产生和复合,为超薄栅MOS结构的可靠性研究提供了一强有力工具. 相似文献
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