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41.
SAPO-34/SiO_2催化甲醇制烯烃 总被引:2,自引:0,他引:2
采用水热法合成了SAPO-34分子筛,并用X射线粉末衍射仪和扫描电子显微镜对SAPO-34分子筛的结构进行了表征,同时探讨了黏合剂种类、甲醇分压、催化剂粒径和硅源等对SAPO-34分子筛催化甲醇制烯烃(MTO)反应性能的影响。实验结果表明,在MTO反应中,三烯(乙烯、丙烯和丁烯)选择性在反应初期存在明显的诱导期;以S iO2为黏合剂合成的SAPO-34/S iO2催化剂不但可缩短MTO反应的诱导期,三烯选择性也较未添加黏合剂或以A l2O3为黏合剂时高1~2个百分点;且当催化剂活性明显下降时,三烯选择性下降的幅度较小。催化剂粒径、甲醇分压及硅源对催化剂的诱导期也有明显的作用。在甲醇分压低于19kPa、催化剂粒径0.25~0.38mm、S iO2为黏合剂、硅酸四乙酯为硅源时,SAPO-34/S iO2催化剂的MTO性能明显提高。 相似文献
42.
F.A Harraz 《Electrochimica acta》2002,47(8):1249-1257
The effect of chloride ions (Cl−) during the immersion plating of copper onto porous silicon (PS) from a methanol (MeOH) solution has been studied. The presence of Cl− in the Cu2+ solution was found to slow down the rate of copper deposition, as confirmed by inductively coupled argon plasma emission spectroscopy and X-ray photoelectron spectroscopy measurements. The threshold concentration of Cl− at which the deposition of copper is very severely diminished was found to be 0.1 M. The inhibition effect is discussed on the basis of the rest potential values of PS and polarization curve measurements. They revealed that the rest potential of PS upon dipping in these solutions appears to direct the metal deposition. Current density-potential curves show that at Cl− concentrations higher than 0.1 M, the reduction of Cu ions proceeds in two steps; the reduction of Cu(II) to Cu(I) followed by the reduction of Cu(I) to Cu(0). This suggests that Cu(I) species in MeOH solution can be stable over a certain potential range and this stability of Cu(I) is responsible for the inhibition of metal deposition. Fourier transform infrared spectroscopy and scanning electron microscopy (SEM) were also performed to investigate the structural changes and characterizations of PS samples after the plating process. 相似文献
43.
Mechanical activation before carbothermic reduction can substantially enhance the formation of SiC from SiO2 and carbon mixtures. However, the morphology (e.g., particles or whiskers) of SiC formed from mechanically activated SiO2 and carbon mixtures is dependent of the degree of mechanical activation and the condition of the subsequent carbothermic reduction. These phenomena are investigated and rationalized based on the increased reactivity of the reactants and SiC formation mechanisms. 相似文献
44.
This work employs porous silicon as a gas diffusion layer (GDL) in a micro-fuel cell. Pt catalyst is deposited on the surface of, and inside, the porous silicon by the physical vapor deposition (PVD) method, to improve the porous silicon conductivity. Porous silicon with Pt catalyst replaces traditional GDL, and the Pt metal that remains on the rib is used to form a micro-thermal sensor in a single lithographic process. 相似文献
45.
46.
Poroussilicon(PS)wasfoundtoemitvisibleluminescenceatroomtemperaturebyCanhamin1990[1].Thisphenomenonimpliedapotentialapplicati... 相似文献
47.
lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5μm to 40μm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out
to realisemosfets on this material. Channel mobilities upto 450 cm2/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the
other gate has been investigated. Comparison of theI
D
v-V
D
curves of the devices with physical models was found in good agreement. 相似文献
48.
The oxidation behavior of Ti-Si alloys (0.25, 0.5, and 1 Wt. % Si) was investigated between 550 and 700°C; in oxygen by continuous thermogravimetry for a maximum duration of about 500 hr and, in air by daily weighing for durations from a few hundred to several thousand hours. The kinetics results revealed that the presence of silicon leads to a decrease in oxidation rate which is more evident when the temperature is raised and the silicon content is increased. Morphological and structural examinations revealed that silicon modifies the internal architecture of oxide layers when compared with unalloyed titanium; in particular, reduced porosity in the layers is observed. Analysis showed that silicon is uniformly distributed in the oxide layer. However, while part of the silicon is in solid solution in the rutile, some is also precipitated as small crystals ( <1 m at 850°C) of SiO2, of cristobalite structure. The adherence of oxide layers to the metal substrate was measured after cooling of samples; the addition of silicon has been observed to modify, in a manner dependent on its content, the adherence of oxide layers. 相似文献
49.
对工业硅生产贸易的目前形势作了较详细分析,并对今后的发展提出了建立行业协会、完善和提高6.3M级工业硅炉,有条件地建设大容量工业硅炉,重视和扩大炭素电极和还原剂煤的应用,提高产品质量扩大产品种,大力开拓市场搞好多方面联合等看法和建议。 相似文献
50.
提出了利用直拉硅中与氮有关的特征红外吸收峰963、996、1081-1及1027cm-1确定直拉硅中氮含量的计算公式,并进行了多种样品实测。该法克服了只用963cm-1峰测定直拉硅中氮使结果偏低的弊病,方法相对偏差为5%~20% 相似文献