紫外光催化辅助SiC抛光过程中化学反应速率的影响

目的为了探究紫外光催化辅助抛光过程中,化学反应速率对SiC化学机械抛光的影响规律。方法通过无光照、光照抛光盘和光照抛光液3种光照方式,研究紫外光催化辅助作用对单晶SiC抛光过程中材料去除率的影响。测量不同条件下光催化反应过程中的氧化还原电位(ORP)值,来表征光催化反应速率,并进行了单晶SiC的紫外光催化辅助抛光实验,考察光催化反应速率对抛光效果的影响规律。结果实验表明,引入紫外光催化辅助作用后,材料去除率提高14%～20%,随着材料去除率的增加,光催化辅助作用对材料去除率的影响程度变小。光照射抛光液方式的材料去除率明显高于光照射抛光盘。不同条件下的抛光结果显示,化学反应速率越快,溶液的ORP值越高,材料去除率越大,表面粗糙度越低。在光照抛光液、H_2O_2体积分数4.5%、TiO_2质量浓度4 g/L、光照强度1500 mW/cm~2、pH=11的条件下,用W0.2的金刚石磨料对SiC抛光120 min后,能够获得表面粗糙度Ra=0.269 nm的光滑表面。结论在单晶SiC的紫外光催化辅助抛光过程中,光催化反应速率越快,溶液ORP值越高,抛光效率越高,表面质量越好。在H_2O_2浓度、TiO_2浓度、光照强度、pH等4个因素中,对抛光效果影响最大的是H_2O_2浓度,光照强度主要影响光催化反应达到稳定的时间。     

微纳结构对硅基超疏水表面冷凝特性的影响

目的 研究微米结构中心距对微纳二级结构超疏水硅表面热交换效率的影响。方法 首先采用湿法腐蚀在硅表面构建中心距分别为22、24、26、28、30 μm的微米四棱台结构,然后采用溶胶-凝胶法在表面涂覆疏水的纳米二氧化硅颗粒,获得微纳二级结构超疏水表面。通过表面接触角测量仪分析表面的湿润性,通过扫描电镜观察表面的微观形貌特征,使用光学显微镜观察冷凝小液滴自迁移现象,使用电子天平称量表面的冷凝集水质量。结果 当纳米结构相同时,随着微米结构中心距的增加,液滴静态接触角减小,冷凝小液滴的自迁移频率变慢,相同时间段内,平均集水效率下降。当相对湿度大于90%时,会出现表面“淹没”现象。微纳二级结构超疏水硅表面（微米结构间距22 μm）的集水效率是单独微米结构硅表面的1.38倍、单独纳米结构疏水表面的1.27倍、疏水硅光片表面的1.75倍、光二氧化硅亲水表面的3.6倍。结论 当纳米结构相同时,在一定范围内适当减小微米结构的中心距,有助于增强微纳二级结构超疏水硅表面热交换效率。     

高强度SiC陶瓷泡沫的变形特性

制备了具有三维连通网状开放结构的碳化硅(SiC)陶瓷泡沫,并测试了其机械性能.SiC陶瓷泡沫表观密度可控制在0.4~1.3 g/cm3,相应的抗压强度为8~50 MPa、抗折强度为3~30 MPa.通过压缩测试得到了SiC陶瓷泡沫应力-应变曲线,发现它只存在一个线性弹性区,这与相关文献报道的结果不同.这可以归因于其内部存在着精细、高密度和高强度的细丝微结构.SiC和细丝在外界施加载荷时能够均匀响应.     

尾矿玻璃对碳化硅和二硅化钼侵蚀机理研究

运用静态实验的方法，以尾矿玻璃熔体对碳化硅和二硅化钼耐火材料进行了侵蚀试验．利用X射线衍射、扫描电镜等方法，对侵蚀前后的耐火材料的晶相组成和显微结构进行了研究，探讨了尾矿玻璃对耐火材料的侵蚀机理．实验结果表明：尾矿玻璃对耐火材料的侵蚀是一个复杂的物理化学过程，耐火材料不仅受到玻璃液的物理侵蚀，同时还受到其化学侵蚀．     

硅橡胶防水涂料在防水工程应用的探讨

本文着重从施工的角度详细介绍了硅橡胶防水涂料的技术性能、防渗机理、各种不同工程部位的施工技术方案及操作要点和注意事项，对防水工程中推广应用硅橡胶防水涂料有很好的实践指导作用和参考价值。     

外墙乳胶漆失光率研究

通过实验,分析讨论了乳液、纳米二氧化硅、白云母对外墙乳胶漆失光率的影响。研究结果表明,乳液的性能不同,乳胶漆的失光率不同;乳胶漆中加入0.1%纳米SiO2,失光率由39%降为12.7%,乳胶漆的失光率明显降低;加入白云母5%,失光率降低16%,对乳胶漆的光泽度和失光率都有一定的改善作用。     

用于FBG解调的AWG芯片的设计、仿真与制备

设计、仿真并制备了一种用于光纤布拉格光栅(FBG)解调的阵列波导光栅(AWG)芯片。该芯片基于SOI衬底进行制备,并在AWG的输入/输出波导、阵列波导与平板波导之间采用双刻蚀结构进行优化。经仿真,该AWG的插入损耗为1.5dB,串扰小于 -20dB,3dB带宽为1.5nm。优化后的AWG芯片采用深紫外光刻技术、电感耦合等离子体等技术制备。经测试,该AWG的插入损耗为3dB,串扰小于 -20dB,3dB带宽为2.3nm。搭建了基于该AWG的解调系统,解调实验结果表明,该系统在0.8nm范围内的解调精度可达11.26pm,波长分辨率为6pm。     

硅粉对轻骨料混凝土耐久性能影响的研究

通过硅粉对轻骨料混凝土耐久性能影响的试验研究,重点探讨硅粉对轻骨料混凝土抗冻性能、干缩性能、抗渗透性能的影响。研究结果表明,轻骨料混凝土中掺加硅粉,可大幅度提高其抗渗透性能,增强混凝土的抗冻融能力,但随着硅粉掺量增大,混凝土的收缩率提高。     

Study on rapid nitridation process of molten silicon by thermogravimetry and in situ Raman spectroscopy

The melt of silicon, hindering nitridation for its agglomeration, should be avoided in the direct nitridation of silicon to synthesize silicon nitride powders, although liquid phase facilitates nitridation. Therefore, we proposed a method to nitride molten silicon without agglomeration. Thermogravimetric and in situ Raman studies on the nitridation process of molten silicon were performed. The as-prepared silicon nitride samples were found to be micron clusters composed of submicron grains with high α-Si₃N₄ content. The nitridation of molten silicon at 1500°C was completed after 500 s and 109 times faster than the nitridation of solid silicon at 1350°C. β-Si₃N₄ is produced dominantly by α–β-phase transition. Less nitridation time and low temperature can decrease the β-Si₃N₄ content. The rapid nitridation was owning to core–shell structure Si@Si₃N₄, which was formed after the initial nitridation of silicon particles and hindered the agglomeration of molten silicon.     

Electrical resistivity of Si3N4 ceramics with Yb2O3 additive

Si₃N₄ ceramics with excellent mechanical properties are used for heat dissipation substrates and so on. In order to improve their reliability and expand their application fields, it is desirable to understand and control the electrical properties of Si₃N₄ ceramics. In this study, the electrical resistivity of Si₃N₄ ceramics with Yb₂O₃ additive was investigated by applying various voltages at temperatures ranging from 25°C to 300°C. When Yb₂O₃ was added as a sintering aid to Si₃N₄ ceramics, a crystalline J-phase (Yb₄Si₂O₇N₂) was formed and their electrical resistivity was significantly lower than that of Y₂O₃ additive. The electrical resistivity of the Yb₂O₃-added ceramics decreased with an increase in temperature and applied voltage. Yb existed in multiple valence states, Yb²⁺ and Yb³⁺, in the Si₃N₄ ceramics and the decrease in the electrical resistivity can be attributed hopping conduction through the J-phase. The J-phase in the Si₃N₄ ceramics was observed to be continuous, and percolation analysis suggested that the J-phase formed an infinite cluster. Therefore, the decrease in the electrical resistivity of the Yb₂O₃-added Si₃N₄ ceramics was found mainly to result from the formation of an infinite cluster of J-phase, which exhibits hopping conduction.