Mullite-bonded SiC-whisker-reinforced SiC matrix composites: Preparation,characterization, and toughening mechanisms

A novel mullite-bonded SiC-whisker-reinforced SiC matrix composite (SiCw/SiC, SiC whisker-to-SiC powder mass ratio of 1:9) was designed and successfully prepared. Before preparing the composite, the inexpensive lab-made SiCw was first modified by an oxidation/leaching process and then coated with Al₂O₃. The kinetics results indicate that the oxidation process can be described by improved shrinking-cylinder models. The aspect ratio of SiCw improved after modification. Subsequently, raw materials with a SiC–SiO₂–Al₂O₃ triple-layered structure were obtained after the Al₂O₃-coating process and used as feedstocks during the subsequent hot-pressing sintering. Finally, the characterization of the composites indicates that the mullite-bonded sample performs better (relative density of 93.8?±?1.4%, flexural strength of 533.3?±?18.2?MPa, fracture toughness of 13.6?±?2.1?MPa?m^1/2, and Vickers hardness of 20.6?±?2.5?GPa) than the reference sample without the mullite interface. The improved toughness could essentially be attributed to the moderately strong interface bonding and effective load transfer effects of the mullite interface.     

Analysis and comparison of different methods used to extract isoclinic and isochromatic parameters. Application to the determination of the residual stresses inside crystal silicon wafers

The present work focuses on an experimental analysis of different photoelastic extraction methods. An adapted test rig designed in order to evaluate several extraction methods, which come from the literature and 2 new proposed methods. Their comparisons point out dissimilar behaviours between them in an experimental environment. However, some specific cases require the use of most appropriate techniques to minimise the defects influence. Therefore, a specific application of the photoelasticity is presented to illustrate the meaning of the technique used. It mainly focuses on the determination of the residual stresses and their orientation inside photovoltaic crystal silicon wafers.     

添加微量硅对925银合金抗硫化变色性能的影响

微量硅在925银铸造过程中可促进合金脱氧，提高合金熔体的洁净度和流动性，但过量硅会劣化合金性能。采用光学显微镜和电子显微镜研究添加微量硅(0.09%~0.15%)对925银微观组织变化的影响。结果表明，随着硅含量升高，925银合金中一次枝晶组织粗大，二次枝晶臂间距增大，当二次枝晶臂间距大于10 μm，合金断裂趋势显著增加。硅元素在925银合金中形成黑色低熔铜基共晶相，并由1~10 μm的点状相转变为8~20 μm的断续条状相，显微硬度变化与共晶二次析出相比例呈对应关系。在925银中梯度添加微量硅使合金硫化腐蚀后色差缩小，提高合金的抗硫化腐蚀变色能力。     

Preform impregnation to optimize the properties and microstructure of RB-SiC prepared with laser sintering and reactive melt infiltration

Indirect selective laser sintering (SLS) was combined with reactive melt infiltration (RMI) to fabricate RB-SiC, and the effects of preform impregnation with different carbon source on the carbonized sample and final RB-SiC were investigated. Results show that the impregnation treatment led to increased bulk density and mechanical strength of samples at all stages. The pore size dwindled and the porosity decreased significantly for the carbonized sample, and the content of Si reduced for the final RB-SiC. The impregnation with PF resin containing 30 % nano carbon black (PFnanoC) seems more promising for the comprehensive properties improvement, the final RB-SiC had a relatively fewer amount of residual pore and carbon and showed superior mechanical properties compared with those of sample impregnated with only PF resin. Kinetics analysis indicates a slower pore-clogging rate under the PFnanoC impregnation condition, which avoided or hindered a too-early infiltration cease during the RMI process.     

磁流变动压复合抛光基本原理及力学特性

目的探究磁流变动压复合抛光基本原理及抛光力学特性。方法通过建立磁流变动压复合抛光过程中流体动压数学模型,分析抛光盘面结构化单元对抛光力学特性的影响规律,并优化其结构。搭建磁流变动压复合抛光测力系统,探究工作间隙、抛光盘转速、工件盘转速和凸轮转速对抛光力的影响规律,基于正交试验,优化抛光效果。结果抛光盘面结构化单元的楔形区利于流体动压效应的产生,且流体动压随楔形角和工作间隙的增大而减少,随楔形区宽度的增大而增大。结构化单元较为合理的几何参数为:楔形角3°~5°,工作间隙0.2~1.0 mm,楔形区宽度15~30 mm。法向力Fn随工作间隙的增大而减小,随工件盘转速的增大而增大,随抛光盘和凸轮转速的增大而先增大后减小;剪切力Ft随工作间隙的增大而减小,随工件盘、抛光盘和凸轮转速的增大均呈现先增大后减小的规律。通过正交试验获得优化工艺参数为:抛光盘转速60 r/min,工件盘转速600 r/min,凸轮转速150 r/min。在羰基铁粉(粒径3μm、质量分数35%)、SiC磨料(粒径3μm、质量分数5%)、工作间隙0.4 mm和磁感应强度0.1 T工况下,抛光2 in单晶硅基片4 h后,表面粗糙度Ra由20.11 nm降至2.36 nm,材料去除率为5.1 mg/h,初始大尺度纹理被显著去除。结论磁流变动压复合抛光通过在抛光盘面增设结构化单元,以引入流体动压效应,强化了抛光力学特性,并利用径向往复运动的动态磁场实现柔性抛光头的更新和整形,最终达到了提高抛光效率和质量的目的。     

Identification of a new oxidation/ dissolution mechanism for boria-accelerated SiC oxidation

Boria effects on accelerated SiC oxidation kinetics were investigated by conducting thermogravimetric analysis on SiC substrates coated with sol-gel derived borosilicate glass isothermally exposed to dry O₂ and argon at 800°C and 1200°C for 100 hours. Boria concentrations in the glass coatings were 0, 14-38, and 92-94 mol%, balance silica. Accelerated weight gain was observed for SiC exposures in dry O₂ at 800°C when boria concentrations were ≥ 92 mol%, corroborated by oxide thickness ranging from 3.5 to 10 µm. The oxide thickness predicted for pure SiC exposed to these conditions in the absence of boria is 0.15 µm. Microstructural analysis of SiC surfaces after oxide removal revealed that boria etched the underlying SiC substrate. Oxidation exposures at 1200°C in dry O₂ suppressed boria effects on accelerating SiC oxidation kinetics due to rapid boria volatilization coupled with the formation of a protective thermally grown silica scale. Accelerated weight gain or oxide growth did not occur with argon exposures at either temperature. A new mechanism for boria-accelerated SiC surface-reaction kinetics is presented based on evidence for boria etching of SiC.     

Improved thermal conductivity of β-Si3N4 ceramics by lowering SiO2/Y2O3 ratio using YH2 as sintering additive

A two-step sintering process was conducted to produce β-Si₃N₄ ceramics with high thermal conductivity. During the first step, native SiO₂ was eliminated, and Y₂O₃ was in situ generated by a metal hydride reduction process, resulting in a high Y₂O₃/SiO₂ ratio. The substitution YH₂ for Y₂O₃ endow Si₃N₄ ceramics with an increase of 29% in thermal conductivity from 95.3 to 123 W m⁻¹ K⁻¹ after sintered at 1900°C for 12 hours despite an inferior sinterability. This was primarily attributed to the purified enlarged grains, devitrified grain boundary phase, and reduced lattice oxygen content in the YH₂-MgO-doped material.     

SiOC modified carbon-bonded carbon fiber composite with SiC nanowires enhanced interfibrous junctions

Carbon-bonded carbon fiber (CBCF) composites are promising lightweight and high efficient thermal insulators to be applied in aerospace area, but their practical applications are usually restricted by the low mechanical performance and poor oxidation resistance. To overcome these drawbacks, many efforts have been made in the fabrication of ceramic coated CBCF composites. However, the densities of these modified composites are usually very high, which would result in the reduction in their thermal insulation performance. Herein, we prepared a CBCF composite with SiC nanowires enhanced interfibrous junctions and SiOC ceramic coated carbon fibers (SiCNWs-SiOC-CBCF). Similar to CBCF, the SiCNWs-SiOC-CBCF exhibits a low density of 0.35 g/cm³ and an anisotropic and highly porous architecture. The SiCNWs-SiOC-CBCF possesses a compressive strength of 3.8 MPa and a compression modulus of 195.7 MPa in the X (or Y) direction, ~26.7% and 150% higher than those of CBCF respectively. It can also suffer from an isothermal treatment in air at 900°C for 120 minutes. The combination of these properties makes the SiCNWs-SiOC-CBCF a good candidate for thermal insulator to be applied in extreme conditions.     

Wetting behavior and brazing of titanium-coated SiC ceramics using Sn0.3Ag0.7Cu filler

By coating active titanium, Sn0.3Ag0.7Cu (SAC) filler wetted SiC effectively, as the contact angle decreased significantly from ~145° to ~10°. Ti₃SiC₂ and TiO_x (x ≤ 1) reaction layers were formed at the droplet/SiC interface, leading to the reduction of contact angle. Reliable brazing of SiC was achieved using titanium deposition at 900°C for 10 minutes, and the typical interfacial microstructure of Ti-coated SiC/SAC was SiC/TiO_x + Ti₃SiC₂/Sn(s,s). Comparing to direct brazing, Ti–Sn compounds in the brazing seam were effectively reduced and the mechanical property of joints was dramatically improved by titanium coating. The optimal average shear strength of SiC joints reached 25.3 MPa using titanium coating- assisted brazing, which was ∼62% higher than that of SiC brazed joints using SAC-Ti filler directly.     

高导热高介电BT/SiC/PA6复合材料的制备及性能研究

以聚酰胺(PA6)为基体,氮化硅(SiC)为导热填料,钛酸钡(BT)为介电填料,通过热压法制备出系列复合材料;研究了不同粒径填料的搭配对材料导热与介电性能的影响。结果表明:在填充量较低时,使用混合粒径导热填料能产生一定的级配效应,从而提高复合材料的导热性能。总填充量为26%时,以4∶1的比例,用粒径为0.5~0.7μm和3μm的SiC共同填充PA6,制备获得了最高导热系数为0.9198W/(m·K)的复合材料,而不同粒径、不同功能的混合功能填料还能产生协同效应,进一步提升材料的导热性能并使材料同时获得较好的介电性能,当SiC填充量为20%,BT填充量为20%时,复合材料的导热系数达到1.1110W/(m·K),介电常数到达16(100Hz),损耗保持在0.075(100Hz)左右。