一款800V VDMOS终端结构的设计

设计了一款800 V VDMOS终端结构,采用场限环(FLR)与场板(FP)相结合的方式,在场限环上添加多晶硅场板与金属场板,有效地降低了表面电场峰值。通过调整终端结构,在135μm的有效终端长度上实现了848 V的击穿电压,最大表面电场为2.34×105 V/cm,小于工业界判断器件击穿场强标准(2.5×105 V/cm),且电场分布比较均匀,终端结构的稳定性和可靠性高。     

大功率LED散热回路热管的实验研究

大功率LED热问题是制约大功率 LED的稳定性、可靠性和寿命的技术瓶颈之一,有效的低热阻封装LED热设计是提高LE D性能的关键。本文提 出一种应用于大功率LED散热的铜-水回路热管(LHP),研究了加热方 式、充液率、风压和倾角 等对LHP均温性、起动性和热阻等的影响。研究结果表明:在输入功率为30W时,LHP的启动时间约为 6.5min;热阻范围为0.48～1.62K/W;在热 负荷为30W时,蒸发器的温度可以稳定控制在75℃以下;蒸发器表 面均温差被控制在1.6℃以下;LHP的最佳的充液率为60%;冷凝器侧 风压在一定范围内(小于130Pa)时,冷凝器侧风压力越大,LED产 品的散热性能越好。     

大功率LED伏安特性模型研究

研究了大功率LED芯片的伏安特性。基于LED 芯片的特殊性,从经典的PN结伏安特性出发,进行理论推导并通过选择不同的基函 数,构建出了大功率LED芯片的伏安特性新 模型和优化模型,模型中的系数采用最小二乘法进行确定。对大功率LED芯片的实测 伏安特性数据表明,本文构建出的优化模型比经典的PN结模型更能准确表征LED的伏安特性 ,与实测的伏安特性数据一致性更高,更具实用价值。     

电容耦合电荷量子比特的调控及纠缠特性

摘 要：借助于狄拉克的正则量子化原理,对电容耦合的双约瑟夫森结电荷量子比特体系实施量子化。考虑到平行于约瑟夫森结面的磁场对结电流的影响,提出了一种新的电荷量子比特的调控方法,并且讨论了外加磁场作用下体系量子态时间演化的拉比振荡现象及纠缠特性。结果表明,利用该体系可以制备纠缠态,改变外加磁通Φ1和Φ2的大小能够实现对电荷量子比特及其纠缠态的有效调控。     

一种基于波导E-T结的新型功分器的设计方法

针对传统功分器的不足,提出了一种改进型波导E-T结功分器。通过三维电磁仿真软件CST对其进行了建模仿真,得到一个合理的设计方案,该结构具有高隔离度、低插入损耗、小体积、宽频带等优点。加工的实物经测试在12~17 GHz的频率范围内,该功分器的插入损耗＜0.12 dB,回波损耗＞18 dB,隔离度＞15 dB,具有良好的工程应用价值。     

Silicon‐Based Current‐Controlled Reconfigurable Magnetoresistance Logic Combined with Non‐Volatile Memory

Silicon‐based complementary metal‐oxide‐semiconductor (CMOS) transistors have achieved great success. However, the traditional development pathway is approaching its fundamental limits. Magnetoelectronics logic, especially magnetic‐field‐based logic, shows promise for surpassing the development limits of CMOS logic and arouses profound attentions. Existing proposals of magnetic‐field‐based logic are based on exotic semiconductors and difficult for further technological implementation. Here, a kind of diode‐assisted geometry‐enhanced low‐magnetic‐field magnetoresistance (MR) mechanism is proposed. It couples p‐n junction's nonlinear transport characteristic and Lorentz force by geometry, and shows extremely large low‐magnetic‐field MR (>120% at 0.15 T). Further, it is applied to experimentally demonstrate current‐controlled reconfigurable magnetoresistance logic on the silicon platform at room temperature. This logic device could perform all four basic Boolean logic including AND, OR, NAND and NOR in one device. Combined with non‐volatile magnetic memory, this logic architecture with unique magnetoelectric properties has the advantages of current‐controlled reconfiguration, zero refresh consumption, instant‐on performance and would bridge the processor‐memory gap. Our findings would pave the way in silicon‐based magnetoelectronics and offer a route to make a new kind of microprocessor with potential of high performance.     

InGaN基高压LED和传统大功率LED的发光效率比较

主要从三个不同角度探究并分析了基于In Ga N材料的高压LED的发光效率优于传统大功率LED的原因。为了保证实验结论的可靠性,文中所采用的实验样品具有相同的芯片尺寸和材料以及相同的封装结构。经过大量的实验证明,更均匀的电流分布和小芯片间隙的出光,使得高压LED的发光效率优于传统大功率LED。结果显示,在相同的1 W输入功率下,高压LED的发光效率比传统大功率LED高大约4.5%。     

功放芯片热分析及散热片结构优化

通过红外热像仪测量Ga As功率放大器芯片的结温可知,温度最高点出现在芯片的栅条上,红外热像仪的放大倍数会导致芯片结温的差异性,正确选择测量的距离系数和放大倍数,可以提高红外热像仪的测温准确性。采用Flotherm软件仿真,并与试验值比较,两者的误差低于6%,由此验证了仿真的可靠性。运用Flotherm软件对T/R组件的散热片优化处理可知,散热片底板对温度影响较小,随着散热片数目的增加,温度逐渐降低,直到散热片的数目阻碍了空气流动,温度开始上升。     

考虑桥墩-水平梁间弹簧接头的周期性高架桥平面内振动能量带分析

对无限多跨周期性高架桥结构的周期单元含一个桥墩、二个水平梁及三个连接弹簧,据Bernoulli-Euler梁及Bloch理论,推导具有水平梁-梁、水平梁-桥墩间弹簧接头传递矩阵,建立周期性高架桥结构平面内振动能量带特征方程。据该模型采用数值算例考察桥墩-水平梁刚度比、接头弹簧刚度等对周期性高架桥结构能量带分布特征影响。计算结果表明,具有水平梁-梁、水平梁-桥墩间弹簧接头的周期性高架桥结构发生平面内振动时,高架桥结构中存在与轴向压缩、横向剪切及弯曲振动对应的三类晶格波,即衰减较快且沿高架桥结构传播距离较短、只在某些频域能传播、除较小频率时难以传播外其它较宽频域均能传播。分析结果表明,高架桥结构设计时须保证结构基本主频不能落在较小频率区域,否则极易引起振动波能量集中,造成结构破坏。随周期性高架桥结构水平梁刚度、水平梁-梁接头弹簧刚度增大,沿高架桥结构传播的晶格波衰减会减慢,振动波能量沿高架桥结构会传播更远。     

Bubble breakup with permanent obstruction in an asymmetric microfluidic T‐junction

Bubble breakup with permanent obstruction in an asymmetric microfluidic T‐junction is investigated experimentally. The breakup process of bubbles can be divided into three stages: squeezing, transition, and pinch‐off stages. In the squeezing stage, the thinning of the bubble neck is mainly controlled by the velocity of the fluid flowing into the T‐junction, and the increase of the liquid viscosity can promote this process. In the transition stage, the minimum width of bubble neck decreases linearly with time. In the pinch‐off stage, the effect of the velocity of the fluid flowing into the T‐junction on the thinning of the bubble neck becomes weaker, and the increase of the liquid viscosity would delay this process. The evolution of the minimum width of the bubble neck with the remaining time before the breakup can be scaled by a power–law relationship. The bubble length has little influence on the whole breakup process of bubbles. © 2014 American Institute of Chemical Engineers AIChE J, 61: 1081–1091, 2015