Thermal stability and sputtering resistance under irradiation of yttria dispersed ferrum films

Oxide dispersion strengthened (ODS) steels are considered as potential candidates for high temperature applications in fusion reactors be- cause of their excellent thermal creep behavior. In the present work, the double-target magnetron co-sputtering method was recommended to prepare yttria dispersed ferrum films. Vacuum annealing and ion irradiation were carried out to study the surface topography and structural features of the prepared yttria dispersed ferrum samples. Experiments proved that while the yttria doping ratio in the ferrum film increases, the recrystallization temperature of the film will be enhanced and the sputtering damage by Xenon ion irradiation will be lowered. The sput- tering resistance of the obtained films would be improved with the growing of grains under vacuum annealing.     

采用磁控溅射法在细菌纤维素膜上制备高性能的铟锡氧化物薄膜

Microbial cellulose (MC) membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide (ITO) electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency (RF) magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction (XRD),scanning electron microscopy (SEM),atomic force mi-croscopy (AFM),and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content (O2/Ar,volume ratio) in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 (Ω·sq-1)] and transparent (above 76%) ITO thin films (240 nm thick) were obtained with a moderate sputtering power (about 60 W) and with an oxygen flow rate of 0.25 ml·min-1 (sccm) during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.     

氧流量对磁控溅射ZrO2薄膜光学性能的影响

采用反应磁控溅射法在k9玻璃基底上沉积ZrO2薄膜.用轮廓仪、椭圆偏振仪和分光光度计,分别测试薄膜的厚度、折射率、消光系数和透过率,研究了不同氧流量对薄膜沉积速率和光学特性的影响.结果表明:随着氧气流量增加到22～24 mL/min(标准状态下)时,沉积速率从6.8 nm/s下降到2.5 nm/s,并趋于稳定;在入射波...     

不同氮分压下磁控溅射ZrN对钛/瓷结合的影响

探讨不同氮分压下磁控溅射氮化锆(ZrN)涂层对纯钛与低熔瓷粉(Vita钛瓷粉系统)结合强度的影响。60个纯钛基片随机分为1个对照组和3个实验组。实验组分别在不同氮分压下(Ta组1.0×10-2Pa,Tb组5.0×10-2Pa和Tc组10.0×10-2Pa)溅射沉积ZrN涂层。纯钛试样经表面处理后在烤瓷炉中进行烧结。用XRD检测到ZrN立方新相。万能试验机测试钛瓷试样三点抗弯强度,对照组为(26.67±0.88)MPa,实验组分别为:Ta(49.41±0.55)MPa,Tb(54.55±0.69)MPa和Tc(46.24±0.53)MPa,四组间差别均有统计学意义(P<0.05)。SEM观察表明,实验组钛/瓷结合良好,钛基底残留的瓷断面数量较多,面积较大。不同氮分压下溅射沉积的ZrN涂层对钛/瓷结合的增强程度有所不同,5.0×10-2Pa下钛/瓷结合增强最为明显。     

磁控溅射Zr-Ti薄膜的组织结构与血液相容性

通过直流平衡磁控溅射法在NiTiSMA表面生成Zr-Ti膜,用SEM、XRD和XPS分析证实制备的Zr-Ti膜呈现晶带T型结构,组织保持了细小致密的纤维状特征,与基底结合良好,并且出现了少量生物惰性ZrO2和TiO2陶瓷相。通过测定溶血率研究血小板黏附行为,评估血液相容性。结果表明,与NiTi基底相比,Zr-Ti膜的溶血率更低,表面黏附的血小板数量减少,能够改善NiTiSMA基底的血液相容性。最后,对磁控溅射沉积Zr-Ti膜的成膜机理进行了探讨。     

钛酸铋薄膜的磁控溅射及其退火处理

采用射频磁控溅射技术,在Pt/Ti/SiO2/Si衬底上制备了钛酸铋(Bi4Ti3O12,简称BIT)薄膜。研究了衬底温度及后续退火处理对薄膜结构和表面形貌的影响。结果表明:适宜的衬底温度为200℃。随着退火温度(650~800℃)的升高,BIT薄膜的结晶性变好,晶粒尺寸增大,c轴取向增强。当退火温度达到850℃时,开始出现焦绿石相;700~800℃为适宜的退火温度,在此条件下得到的BIT薄膜结晶良好,尺寸均匀,表面平整致密。     

有源层溅射温度对非晶铟镓锌氧薄膜晶体管电学特性的影响

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO （a-IGZO） thin film transistors （TFTs） is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ＂optimized-annealed＂ are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150℃ while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and Ols spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films, Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature.     

基于常温磁控溅射法的二氧化钒薄膜制备方法研究

采用常温磁控溅射法制备金属钒薄膜,然后在合适的氧气氛围下对其进行退火氧化处理,最终在非晶玻璃衬底上制备出具有相变的高性能二氧化钒(Vanadium Dioxide,VO_2)薄膜。X射线衍射(X-Ray Diffraction,XRD)测试结果表明,所制薄膜的主要成分为VO_2;扫描电子显微镜(Scanning Electron Microscope,SEM)测试结果表明,所制薄膜的结晶性良好,晶粒粗细均匀。该薄膜在室温下的红外光透过率(2400nm处)为67%,在高温下的红外光透过率(2400 nm处)为9%。其透过率差值为58%,因此具有良好的红外透过率调节能力。同时还测试分析了薄膜光学转变与电学转变的差异,发现电学转变温度比光学转变温度高4.7℃。该方法适合大面积VO_2薄膜的制备,对智能窗的研究与应用具有重要意义。     

镀料粒子脱靶方式对纯铝镀层微观组织的影响

传统磁控溅射的镀料粒子碰撞溅射脱靶后具有较低的离化率和沉积动能,致使制备的纯金属镀层极易形成带有微空隙的柱状结构,降低了镀层的致密性和膜基结合力。针对此问题,在磁控溅射环境下将阴阳极间的电流提升至气体放电伏安特性曲线中的弧光放电过渡区时,受靶面晶界和缺陷处电子逸出功低于晶粒内的影响,靶面微区会形成电子逸出的自增强效应,并产生弧光放电现象。弧光放电使靶面微区熔融,该区域的镀料粒子将以熔融喷溅的方式脱靶,凭借熔融喷溅的高产额特性提高镀料粒子的碰撞离化率,为实现镀层组织的调控打下基础。实验结果发现:本研究采用高频振荡脉冲电场,在逐步提升靶电流的过程中,靶面的微观形貌会由不规则的凹坑状形貌逐渐转变为圆形熔坑和沟壑状形貌,说明镀料粒子的脱靶方式由碰撞溅射逐渐转变为熔融喷溅。靶电流为2 A时,镀料粒子主要以碰撞溅射脱靶,制备的纯Al镀层呈现出典型的柱状组织,而在柱状组织间存在着微小间隙。靶电流增大至14 A时,镀料粒子以熔融喷溅脱靶为主,大量离化的镀料粒子可在基体偏压电场下加速沉积,提高了镀料粒子的扩散能力,弱化了镀层柱状生长的倾向,易使镀层形成致密的组织。同时,镀层的沉积速率和膜基结合力也会有明显提升。     

钼添加对CrN涂层抗氧化性能的影响

研究钼添加对CrN涂层微观结构和抗氧化性能的影响,采用反应磁控溅射法在硅片和高速钢片上制备不同Mo含量的Cr-Mo-N涂层,并在500~800 ℃的高温空气中退火1 h,用X射线衍射（XRD）、拉曼光谱和扫描电子显微镜（SEM）对涂层退火前后的微观形貌进行表征。沉积的CrN和Cr-Mo-N涂层均表现出基于CrN晶格的B1面心立方相（fcc）。Mo离子取代Cr-N晶格中的Cr离子,形成Cr-Mo-N固溶体。在600 ℃时,XRD和拉曼光谱表明,Mo含量较高的Cr-Mo-N涂层中形成MoO₃相,表面较粗糙,含氧量较高。在700 ℃时,CrN涂层由于内应力的作用,其横截面形貌为疏松的柱状晶,并有一定的多孔区,而Cr-Mo-N涂层则为致密的柱状晶结构。低Mo含量（<17at%）的Cr-Mo-N涂层比CrN涂层具有更好的抗氧化性。