Thermal transport and chemical conversion in single reacting sorbent particles

The effects of particle size and carbon dioxide concentration on chemical conversion in engineered spherical particles undergoing calcium oxide looping are investigated. Particles are thermochemically cycled in a furnace under different carbon dioxide concentrations. Changes in composition due to chemical reactions are measured using thermogravimetric analysis. Gas composition at the furnace exit is evaluated with mass spectroscopy. A numerical model of thermal transport phenomena developed previously is adapted to match the physical system investigated in the present study. The model is used to elucidate effects of reacting medium characteristics on particle temperature and reaction extent. Experimental and numerical results show that (1) an increase in particle size results in a decrease in carbonation extent, and (2) the carbonation step consists of fast and slow reaction regimes. The reaction rates in the fast and slow carbonation regimes increase with increasing carbon dioxide concentration. The effect of carbon dioxide concentration and the distinction between the fast and slow regimes become more pronounced with increasing particle size.     

核聚变堆用钨表面超精密抛光的研究现状与趋势

钨作为未来核聚变堆中最有前景的面向等离子体材料,在反应堆工况下将承受高能粒子的辐照冲击。表面质量的好坏会直接影响材料的氢/氦滞留行为和辐照损伤程度,进而影响聚变堆的安全性和可靠性。现阶段,针对钨的抗辐照改性研究主要着眼于材料的成分、结构和组织设计,关于机械加工对材料表面抗辐照改性的研究甚少。文章聚焦前沿科学问题,从机械加工角度分析核材料领域科学问题,结合国内外相关研究成果及核聚变堆用钨(PFM-W)的机械加工现状,阐述了PFM-W表面超精密抛光的必要性。通过对比不同抛光方法,提出了磁流变抛光和力流变抛光是较为适合PFM-W表面超精密加工的观点,并对未来PFM-W表面超精密抛光研究趋势进行了分析,重点在抛光方法的探索以及抛光后材料表面质量对抗辐照性能影响的研究。     

CLBO晶体化学机械抛光技术的研究

介绍了硼酸锂铯(CLBO)晶体的应用前景及在化学机械抛光过程中存在的问题,简要分析了晶体在常温下开裂的机理,选用无水溶剂对晶体进行化学机械抛光以防止加工过程中晶体的潮解开裂。分析了抛光液、压力、温度、pH值参数对抛光过程的影响,通过合适配比使速率可达1.5～2μm/min,且表面质量较好。     

铝薄膜CMP影响因素分析

提出了在碱性抛光液中铝薄膜化学机械抛光的机理模型,对抛光液的pH值、磨料、氧化剂浓度对过程参数的影响做了一些试验分析。试验结果表面粗糙度的铝薄膜所需的最优化CMP过程参数:硅溶胶粒径为15～20nm,pH值为10.8～11.2,氧化剂浓度为2.5%～3%。     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.     

激光抛光技术的发展与展望

介绍激光抛光技术的发展历史,阐明激光抛光的应用现状及未来的发展前景,论述了激光抛光的工艺特点和作用机理,将激光抛光技术与其它抛光技术进行了全面的对比,指出激光抛光的优势及其存在的问题。     

Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

不同加工工艺的锑化镓晶片损伤研究

用透射电子显微镜、扫描电镜对锑化镓材料切、磨、抛等加工工艺引入的表面损伤进行观察和检测。结果表明：切割加工是锑化镓单晶晶片表面损伤层引入的主要工序；锑化镓单晶切割片表面极不平整，有金刚砂所引起的较粗桔皮皱纹；其表面损伤层深度≤30μm；双面研磨的锑化镓晶片表面仍有较粗桔皮皱纹，但比切割片的要细，而且桔皮皱纹的深浅随磨砂（Al2O3)粒径的减小而变细变浅；晶片的表面损伤层深度（≤5μm）也随着磨砂粒径的减小而减小。一般情况下，其损伤层的深度约为磨砂粒径的1/2。机械化学抛光加工的锑化镓晶片表面的SEM像观察不到桔皮皱纹；其损伤层深度约55nm。     

皮革去污上光用乳化蜡的研制

采用石蜡、微晶蜡为主要原料 ,经实验选出了以水为稀释剂的乳化型皮革去污上光蜡。实验优化的配方为石蜡 12 .5 g ,微晶蜡 8.0 g ,硬脂酸 8.5g ,三乙醇胺 5 .5 g ,水量 70 (涂用 )或 130 g(喷用 )。反应条件为乳化时间 4 0min ,搅拌速度 5 0 0～ 70 0r/min ,乳化温度 90℃。制得上光剂产品的去污性能可与用去污剂单独处理的效果相当 ,亮度可达 6 6 .7。     

抛光液温控装置结构设计及温度场分析

为精确控制超光滑表面抛光过程中抛光液的温度,根据温控基本原理设计温控装置结构.将用UG建立的温控装置模型导入GAMBIT中进行温度场分析.针对装置内部温度分布不均匀问题,对其结构进行优化：在装置内加入导热隔板将其分为工作区和调温区,制冷器被置于调温区内;将温控装置的外形结构加入过渡圆角.结果表明：优化后的温控装置形成内外环流,工作区温度波动范围为±0.01℃,温度分布均匀对称,满足高精度温控的恒温和匀温要求.