Bio-Based,Self-Crosslinkable Eucommia ulmoides Gum/Silica Hybrids with Body Temperature Triggering Shape Memory Capability

At present, the synthesis of body temperature triggering shape memory polymers usually requires elaborate structural design, which limits their wide application. Herein, starting from bio-based Eucommia ulmoides gum (EUG), a series of EUG/silica hybrids (ESHs) are prepared through a facile one-pot process, in which EUG is epoxied and then self-crosslinked with SiO₂ by epoxy ring-open reaction. Varying the amount of H₂O₂, the shape memory transition temperature (T_trans) of ESHs is adjusted to 47.4–36.6 ℃, which is close to human body temperature (37 ℃). Among them, ESH-17 exhibited the best body temperature triggering shape memory ability (T_trans = 36.6 ℃), which can restore the permanent shape within 60 s at 37 ℃ with a shape fixity ratio of 99% and shape recovery ratio near 100%. In addition, the shape memory mechanism is discussed and shows some application scenarios of ESHs. The as-produced materials can be used as smart biomaterials such as self-tightening sutures, self-sealing root canal filling materials, and so on.     

High-Throughput Screening for Phase-Change Memory Materials

Phase change memory (PCM) is an emerging non-volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge-Sb-Te (GST) alloy based on experimental “trial-and-error” methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high-throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge₂Bi₂Te₅, GeAs₄Te₇, GeAs₂Te₄, so on and other candidates that have not been reported, such as TlBiTe₂, TlSbTe₂, CdPb₃Se₄, etc. Compared with GST, materials with close cohesive energy include AgBiTe₂, TlSbTe₂, As₂Te₃, TlBiTe₂, etc., indicating possible low power consumption. Through further melt-quenching molecular dynamic calculation and structural/electronic analyses, Ge₂Bi₂Te₅, CdPb₃Se₄, MnBi₂Te₄, and TlBiTe₂ are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big-data applications.     

高熵形状记忆合金的研究进展

高熵形状记忆合金是在等原子比NiTi合金的基础上,结合高熵合金的概念,逐渐发展起来的一种新型高温形状记忆合金。近年来,已开发出了综合性能优异的(TiZrHf)50(NiCoCu)50系和(TiZrHf)50(NiCuPd)50系高熵形状记忆合金,引起了广泛的关注和研究兴趣。本文从物相组成、微观组织、马氏体相变行为、形状记忆效应和超弹性等角度出发,综述了高熵形状记忆合金的研究进展,并对高熵形状记忆合金未来的研究重点进行了展望。     

4D Printing of Shape Memory Materials for Textiles: Mechanism,Mathematical Modeling,and Challenges

Shape memory materials (SMMs) in 3D printing (3DP) technology garnered much attention due to their ability to respond to external stimuli, which direct this technology toward an emerging area of research, “4D printing (4DP) technology.” In contrast to classical 3D printed objects, the fourth dimension, time, allows printed objects to undergo significant changes in shape, size, or color when subjected to external stimuli. Highly precise and calibrated 4D materials, which can perform together to achieve robust 4D objects, are in great demand in various fields such as military applications, space suits, robotic systems, apparel, healthcare, sports, etc. This review, for the first time, to the best of the authors’ knowledge, focuses on recent advances in SMMs (e.g., polymers, metals, etc.) based wearable smart textiles and fashion goods. This review integrates the basic overview of 3DP technology, fabrication methods, the transition of 3DP to 4DP, the chemistry behind the fundamental working principles of 4D printed objects, materials selection for smart textiles and fashion goods. The central part summarizes the effect of major external stimuli on 4D textile materials followed by the major applications. Lastly, prospects and challenges are discussed, so that future researchers can continue the progress of this technology.     

高地压严重突出区域下向穿层钻孔预抽消突技术

利用工作面高抽巷施工掩护顺槽掘进工作面下向穿层条带预抽钻孔,通过对钻场底板深、浅孔注浆封堵围岩裂隙解决了孔内返水不畅难题;采取了"两堵一注"封孔方式确保封孔严密不漏气;孔内全程下吹水管,实现了单孔、分组、定时吹水工作目标,提高了下向消突钻孔抽采效果,形成了一套高效、快速的下向穿层钻孔消突管理模式,实现了高地压严重突出区域煤层高效消突以及技术经济一体化目标,安全经济效益显著。     

基于并行多通道卷积长短时记忆网络的轴承寿命预测方法

在预测轴承剩余使用寿命时，数据间的时序特性是一个可以利用的重要隐藏信息。为了更好地提取具有时序信息的特征用于预测，提出了一种基于并行多通道卷积长短时记忆网络（PMCCNN-LSTM）的剩余使用寿命预测模型。该模型主要由两部分组成：前端为并行多通道卷积网络（PMCCNN），提取信号特征，挖掘数据的时序特性，并采用逐层训练和微调的方式提升参数的收敛性；后端为长短时记忆（LSTM）网络，基于特征进行剩余使用寿命预测，并采用加权平均的方法对预测结果进行平滑处理。在一个轴承加速寿命实验的公开数据集上使用留一法验证了该模型的准确性，实验结果表明：所提模型的平均误差与最大误差分别比传统的卷积神经网络（CNN）低23.38%和15.84%，比传统的LSTM低24.14%和19.01%，比卷积长短时记忆网络（CNN-LSTM）低30.32%和23.09%。     

A New Design Methodology for Time-Based Capacitance-to-Digital Converters (T-CDCs)

This paper introduces a 9-bit time-based capacitance-to-digital converter (T-CDC). This T-CDC adopts a new design methodology for parasitic cancellation with a simple calibration technique. In T-CDCs, the input sensor capacitance is first converted into a delay pulse using a capacitance-to-time converter (CTC) circuit; then this delay signal is converted into a digital code through a time-to-digital converter (TDC) circuit. A prototype of the proposed T-CDC is implemented in UMC 0.13 μm CMOS technology. This T-CDC consumes 8.42 μW and achieves a maximum SNR of 45.14 dB with a conversion time of 1 μs that corresponds to a figure of merit (FoM) of 16.4 fJ/Conv.     

Bayesian Inference for ARFIMA Models

This article develops practical methods for Bayesian inference in the autoregressive fractionally integrated moving average (ARFIMA) model using the exact likelihood function, any proper prior distribution, and time series that may have thousands of observations. These methods utilize sequentially adaptive Bayesian learning, a sequential Monte Carlo algorithm that can exploit massively parallel desktop computing with graphics processing units (GPUs). The article identifies and solves several problems in the computation of the likelihood function that apparently have not been addressed in the literature. Four applications illustrate the utility of the approach. The most ambitious is an ARFIMA(2,d,2) model for the Campito tree ring time series (length 5405), for which the methods developed in the article provide an essentially uncorrelated sample of size 16,384 from the exact posterior distribution in under four hours. Less ambitious applications take as little as 4 minutes without exploiting GPUs.     

Ferroelectric and electromechanical performance of diverse engineered states of Mn-doped 0.75Pb(Mg1/3Nb2/3)O3-0.25PbTiO3 ceramics

The materials processing history has a great influence on their properties and finally determines their application effect. In this paper, the ferroelectric, polarization-switching current, and strain properties of Mn-doped 0.75Pb(Mg_1/3Nb_2/3)O₃-0.25PbTiO₃ ceramics were studied in fresh state, aged state, and poled state, respectively. Compared with the symmetric polarization-electric-field (P-E) hysteresis loops, current-density-electric-field (J-E) curves, and bipolar electric-field-induced strain (S-E) curves in fresh state samples, asymmetric P-E loops, J-E curves, and bipolar S-E curves were obtained in poled state samples. Well-aged-state samples exhibit double hysteresis P-E loop, four peaks J-E curves, and symmetric S-E curves without negative strain. The symmetry-conforming short-range order (SC-SRO) principle of point defects and internal electric field E_i is employed to clarify the different phenomenon of three states. Results indicated that randomly oriented defect polarization P_D in aged samples can reverse the spontaneous polarization P_S back and result in the double hysteresis P-E loop and four peaks J-E curves. The oriented P_D and resulting E_i in poled-state samples will lead to the asymmetric loops and strain memory effect.     

Greatly improved NIR shielding performance of CuS nanocrystals by gallium doping for energy efficient window

In this work, gallium doped copper sulfide (Ga-doped CuS) nanocrystals were prepared using a solvothermal method. The effects of Ga doping on the crystal structures, chemical composition, morphology, optical properties and thermal performance of copper sulfide (CuS) were investigated. The Ga-doped CuS nanocrystals had a hexagonal structure comparable to that of pure CuS. The Cu⁺/Cu²⁺ ratio first decreased and then increased with increasing Ga³⁺ doping. Both CuS and Ga-doped CuS exhibited nanoplate and nanorod morphologies. The visible transmittance of the Ga-doped CuS films was in the range of 61–77.1%. Importantly, the near-infrared (NIR) shielding performance of the films can be tuned by adjusting the concentration of the Ga dopant. The NIR shielding value of the optimal Ga-doped CuS film was 72.4%, which was approximately 1.5 times as high as that of the pure CuS film. This can be ascribed to the enhanced plasmonic NIR absorption that resulted from an increase in the hole concentration after doping with Ga³⁺ ions. In the thermal performance test, the Ga-doped CuS film lowered the interior temperature of the heat box by 9.1 °C. Therefore, the integration of good visible transmittance and high NIR shielding performance make the Ga-doped CuS nanocrystals a promising candidate for energy-efficient window coatings.