Structural and dielectric properties,and nonlinear electrical response of the CaCu3-xZnxTi4O12 ceramics: Experimental and computational studies

CaCu_3-xZn_xTi₄O₁₂ ceramics (x = 0, 0.05, 0.10) were successfully prepared by a conventional solid-state reaction method. Their structural and dielectric properties, and nonlinear electrical response were systematically inspected. The X-ray diffraction results indicated that single-phase CaCu₃Ti₄O₁₂ (JCPDS no. 75–2188) was obtained in all sintered ceramics. Changes in the lattice parameter are well-matched with the computational result, indicating an occupation of Zn²⁺ doping ions at Cu²⁺ sites. The overall tendency shows that the average grain size decreases when x increases. Due to a decrease in overall grain size, the dielectric permittivity of CaCu_3-xZn_xTi₄O₁₂ decreases expressively. Despite a decrease in the dielectric permittivity, it remains at a high level in the doped ceramics (~3,406–11,441). Besides retention in high dielectric permittivity, the dielectric loss tangent of x = 0.05 and 0.10 (~0.074–0.076) is lower than that of x = 0 (~0.227). A reduction in the dielectric loss tangent in the CaCu_3-xZn_xTi₄O₁₂ ceramics is closely associated with the enhanced grain boundary response. Increases in grain boundary resistance, breakdown electric field, and conduction activation energy of grain boundary as a result of Zn²⁺ substitution are shown to play a crucial role in improved grain boundary response. Furthermore, the XPS analysis shows the existence of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺, indicating charge compensation due to the loss of oxygen lattice. Based on all results of this work, enhanced dielectric properties of the Zn-doped CCTO can be explained using the internal barrier layer capacitor model.     

Enhancing giant dielectric properties of Ta5+-doped Na1/2Y1/2Cu3Ti4O12 ceramics by engineering grain and grain boundary

Various strategies to improve the dielectric properties of ACu₃Ti₄O₁₂ (A = Sr, Ca, Ba, Cd, and Na_1/2Bi_1/2) ceramics have widely been investigated. However, the reduction in the loss tangent (tanδ) is usually accompanied by the decreased dielectric permittivity (ε′), or vice versa. Herein, we report a route to considerably increase ε′ with a simultaneous reduction in tanδ in Ta⁵⁺–doped Na_1/2Y_1/2Cu₃Ti₄O₁₂ (NYCTO) ceramics. Dense microstructures with segregation of Cu– and Ta–rich phases along the grain boundaries (GBs) and slightly increased mean grain size were observed. The samples prepared via solid-state reaction displayed an increase in ε′ by more than a factor of 3, whereas tanδ was significantly reduced by an order of magnitude. The GB–conduction activation energy and resistance raised due to the segregation of Cu/Ta–rich phases along the GBs, resulting in a decreased tanδ. Concurrently, the grain–conduction activation energy and grain resistance of the NYCTO ceramics were reduced by Ta⁵⁺ doping ions owing to the increased Cu⁺/Cu²⁺, Cu³⁺/Cu²⁺, and Ti³⁺/Ti⁴⁺ ratios, resulting in enhanced interfacial polarization and ε′. The effects of Ta⁵⁺ dopant on the giant dielectric response and electrical properties of the grain and GBs were described based on the Maxwell–Wagner polarization at the insulating GB interface, following the internal barrier layer capacitor model.     

Hydrogen adsorption of Li functionalized Covalent Organic Framework-366: An ab initio study

This work deals with the investigations of hydrogen adsorption energies of the Li functionalized Covalent Organic Framework-366 (COF-366) by using the density functional theory method. Based on total energy calculations, it was found that Li atom is preferentially trapped at the center site of the tetra(p-amino-phenyl) porphyrin and the onN site of a terephthaldehyde chain. Moreover, hydrogen adsorption energies per H₂ for 1–3 H₂ loadings range from 0.03 to 0.22 eV. According to ab initio molecular dynamics simulations, our results found that hydrogen capacities of Li functionalized COF-366 at ambient pressure are 2.06, 1.58, and 1.05 wt% for 77, 150 and 298 K, respectively.     

Ge4+ doped CaCu2.95Zn0.05Ti4O12 ceramics: Two-step reduction of loss tangent

CaCu₃Ti₄O₁₂ ceramics have been extensively studied for their potential applications as capacitors in recent years; however, these materials exhibit very large dielectric losses. A novel approach to reducing the dielectric loss tangent in two steps, while increasing the dielectric permittivity, is presented herein. Doping CaCu₃Ti₄O₁₂ with a Zn dopant reduces the loss tangent of the ceramic material from 0.227 to 0.074, which is due to the increase in grain boundary (GB) resistance by an order of magnitude (from 6.3× 10³ to 3.93 × 10⁴ Ω cm). Zn-doping slightly changes the microstructure and dielectric permittivity of the CaCu₃Ti₄O₁₂ ceramic, which reveals that the primary role of the Zn dopant is to tune the intrinsic properties of the GBs. Surprisingly, the addition of the Ge⁴⁺ dopant into the Zn²⁺-doped CaCu₃Ti₄O₁₂ ceramic sample led to a further decrease in the loss tangent from 0.074 to 0.014, due to enhanced GB resistance (3.1 × 10⁵ Ω cm). The grain size increased remarkably from 2–3 μm to 85–90 μm, corresponding to a significant increase in the dielectric permittivity (~1–4 × 10⁴). The large increase in GB resistance is due to the intrinsic potential barrier height at the GBs and the segregation of the Cu-rich phase in the GB region. First-principles calculations revealed that Zn and Ge are preferentially located at the Cu sites in the CaCu₃Ti₄O₁₂ structure. The substitution of the Ge dopant does not hinder the role of the Zn dopant in terms of improving the electrical properties at the GBs. These phenomena are effectively explained by the internal barrier layer capacitor model. This study provides a way of improving the dielectric properties of ceramics for their practical use as capacitors.     

First-principles calculations and experimental study of enhanced nonlinear and dielectric properties of Sn4+-doped CaCu2.95Mg0.05Ti4O12 ceramics

High dielectric permittivity (ε′ ≈ 2000―6900) was accomplished in Sn⁴⁺-doped CaCu_2.95Mg_0.05Ti₄O₁₂ ceramics while retaining a low loss tangent (tanδ ≈ 0.027―0.075). Further, significant improvements in the nonlinear electrical properties, such as high values of the breakdown electric field (E_b ≈ 1.2―1.3 × 10⁴ V cm^?1) and nonlinear coefficient (α ≈ 31), were achieved. In addition, the nonlinear electrical parameters significantly improved, which is consistent with the increase in the electrical resistivities of the grains and grain boundaries due to the decrease in the Cu⁺/Cu²⁺ ratio. According to our first-principles calculations, the Sn atom at the Ti site prefers to be close to the Mg atom at the Cu site, while the oxygen vacancy prefers to be located at large distances from the Sn and Mg co-dopants. This confirms that the dielectric behavior and the nonlinear electrical properties originate from the interface between the grain and grain boundary.     

The effect of phase transition of crednerite/delafossite CuMn1−xCrxO2 on optical,thermal, and power factor properties

This study aims to investigate the effect of the phase transition of CuMn_1−xCr_xO₂ compound on the Jahn–Teller effect which in turn affects the optical, thermal, and thermoelectric power factor properties. The CuMn_1−xCr_xO₂ samples were synthesized by a solid-state reaction method. The ab initio computation was applied to evaluate the electronic and optical properties in order to confirm the experiment data. The appearance of the phase transition from crednerite CuMnO₂ to delafossite CuCrO₂ was confirmed by X-ray diffraction (XRD) and the ab initio computation through displaying the mixed crednerite/delafossite phase; and, the existence of the Jahn–Teller effect was confirmed by the X-ray photoelectron spectroscopy (XPS) technique exhibiting the occurrence of mixed-state Mn³⁺/Mn⁴⁺ ions. The results obtained from XRD, XPS, and the ab initio computation implied the decrease of the Jahn–Teller behavior with increased x content under the influence of the phase transition from the crednerite phase to the delafossite phase of CuMn_1−xCr_xO₂. Surprisingly, the Jahn–Teller distortion reduction caused an increase in the energy gap of the optical property, electrical resistivity, and activation energy in thermally activated band conduction. The effect suffered the specific heat behavior by being separated into two groups of crednerite and delafossite, and enhanced the small polaron behavior by increasing the activation energy of thermally activated band conduction. The phase transition reduced the results of thermal conductivity, thermopower, and thermoelectric power factor properties. In other words, the effect of the phase transition from the crednerite CuMnO₂ phase to the delafossite CuCrO₂ phase on CuMn_1−xCr_xO₂ compound reduced the Jahn–Teller effect with increased Cr content which in turn caused changes in the optical, thermal, and thermoelectric power factor properties. The effect of the phase transition is advantageous for the improvement of material properties.     

Influence of SCN− moiety on CH3NH3PbI3 perovskite film properties and the performance of carbon-based hole-transport-layer-free perovskite solar cells

Journal of Materials Science: Materials in Electronics - CH3NH3PbI3 perovskite films were prepared via a hot-casting method using six different CH3NH3I, PbI2 and Pb(SCN)2 solutions. Surface...     

Hydrogen binding in alkali-decorated iso-reticular metal organic framework-16 based on Zn, Mg, and Ca

Hydrogen adsorption energies were investigated in three different types of iso-reticular Metal Organic Framework-16, Zn-/Mg-/Ca-MOF16, decorated with either Li, Na, or K. Concerning the binding strengths of the alkali metals, the density functional theory calculations reveal that Li is bound strongest to the host framework, followed by K and Na. Decoration with Li also results in the highest hydrogen adsorption energies among the studied alkali metals. Furthermore, Zn-MOF16 exhibits the highest hydrogen adsorption energies near the metal oxide cluster, while hydrogen binding strengths at organic linker sites do not differ substantially between Zn-/Mg-/Ca-MOF16. Based on these results, we conclude that for Metal Organic Framework-16, Li-decorated Zn-MOF16 appears to be the optimal choice for hydrogen storage among the nine combinations.