SAP对水泥水化热及混凝土收缩性能的影响研究

为研究高分子吸水树脂（SAP）对混凝土收缩性能及水泥水化热的影响,在水泥净浆和混凝土中加入不同掺量的未吸水SAP,通过水泥净浆收缩性能、混凝土收缩性能、水泥水化热和抗裂圆环试验得出：水泥净浆收缩率随SAP掺量的增加而减小,SAP掺量相同时,0.30水胶比水泥净浆的收缩率大于0.35水胶比水泥净浆;SAP的“蓄水库”功能改善了混凝土内部湿度,可避免自干燥现象产生,抑制混凝土自收缩,混凝土减缩率和SAP掺量呈正相关;SAP的掺入使得水泥水化反应放缓,SAP掺量越大,减缓效果越明显,放热总量越少,水泥水化热时温图的峰值也相应降低;SAP延缓了混凝土开裂时间,减少了裂缝数量,当SAP掺量为0.1%时,圆环贯穿裂缝消失。     

CaCu_3Ti_4O_(12)(CCTO)陶瓷的研究进展

CaCu_3Ti_4O_(12)(也简称为CCTO)是一种非铅基、具有高介电常数以及高热稳定性的新型介电陶瓷。这种性质使得它无论在科研领域还是在实际应运中都将成为研究的热点。首先介绍了CCTO目前的几种制备工艺,并对这几种工艺作出简单对比分析。其次介绍了CCTO巨介电常数机理来源的几种机制,然后详尽介绍掺杂改性对CCTO特性的影响,最后对CCTO的研究现状做出总结。     

环氧树脂复合材料的制备及其导热性能研究

分别采用氮化硼(BN)、多巴胺改性BN(BN@PDA)、氮化硼与碳纳米管(CNTs)复配作为导热填料填充环氧树脂,制备了一系列导热复合材料。研究了填料种类、含量对复合材料导热性能、介电性能等的影响。结果表明:经多巴胺改性的BN微粒能均匀分散在环氧树脂体系中,当BN@PDA的质量分数为50%时,BN@PDA/EP复合材料的热导率达到1.232 W/(m·K),较纯环氧树脂的热导率提高了250%。在相同的BN@PDA含量下,采用BN@PDA/CNTs复配填料时可以制备得到高导热高介电的复合材料,热导率提高至2.147 W/(m·K),同时1 kHz下的介电常数提高至51.881,介质损耗因数仅为0.043。     

Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering

A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide range of SixCy thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate holder.The films were characterized by surface profiler,x-ray photoelectron spectroscopy,ultraviolet-visible spectroscopy,fourier transform infrared spectroscopy and Raman spectroscopy.The carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm,the optical band gap changed between 1.27 and 1.99 eV,the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm,which has the highest Si?C bond density of 11.7×10^22 cm^-3.The C poor and C rich SixCy samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm,the optical band gap decreased with the Si?C bond density.     

Plasma Diagnosis for Microwave ECR Plasma Enhanced Sputtering Deposition of DLC Films

Application of the Langmuir probe in plasma circumstance for deposition of diamond-like carbon(DLC) thin films usually faces the problem of rapid failure of the probe due to surface insulative coating.In this paper,we circumvent the problem by using the floating harmonic probe technique.In the real circumstance of DLC film deposition,the floating harmonic probe worked reliably over 3 hours,correctly indicating the ion density and electron temperature.The technique was practically used to measure the ion density and electron temperature in DLC film deposition processes using the microwave ECR plasma enhanced sputtering.Combined with the Raman spectroscopic characterization of the films,the conditions for deposition of DLC films were investigated.     

CCTO/PVDF复合材料的制备及介电性能研究

采用溶胶-凝胶法制备CaCu_3Ti_4O_(12)(CCTO)前驱粉体,然后与聚偏氟乙烯(PVDF)进行复合,制备了CCTO/PVDF复合材料。研究了在不同煅烧温度和不同含量CCTO前驱粉体条件下CCTO/PVDF复合材料的介电性能与微观结构。结果表明:CCTO前驱粉体的晶粒尺寸随着煅烧温度的升高而逐渐增大,并且在各个煅烧温度下CCTO前驱粉体的粒径分布较宽。随着煅烧温度的升高,CCTO/PVDF复合材料的介电常数减小。CCTO/PVDF复合材料的介质损耗也随煅烧温度的升高呈现下降趋势,这可能是由前驱粉体自身的损耗造成的。CCTO/PVDF复合材料的介电常数和介质损耗均随CCTO前驱粉体含量的增加而增大。     

CaCu3Ti4-3/4zFezO12/偏聚氟乙烯和Ca1-3/2xLaxCu3-yMgyTi4O12/偏聚氟乙烯复合材料的制备及介电性能研究

以CaCu3Ti4O12为原料,采用溶胶-凝胶法制备CaCu3Ti4-3/4zFezO12 (CCTFO)和Ca1-3/2xLaxCu3-y MgyTi4O12(CLCMTO)前驱粉体,以聚偏氟乙烯(PVDF)为基体采用球磨共混法热压制备CaCu3Ti4-3/4zFezO12(CCTFO)/PVDF和Ca1-3/2xLaxCu3-yMgyTi4O12(CLCMTO)/PVDF复合材料,考察掺杂量和前驱粉体填充质量对复合材料微观结构和介电性能的影响。结果表明:当前驱粉体填充质量增加到50%时,复合材料出现团聚现象。复合材料的介电常数和介电损耗均随填料含量的增加而升高,Fe掺杂后虽然不能提高复合材料的介电常数,但能降低中到高频段的介电损耗,La、Mg双掺杂不仅可以提高介电常数还可以降低介电损耗。     

基于TMS320DM8168的视频编码系统研究与实现

随着信息技术的进步,空间对地成像已朝着高清、多路方向发展。基于通用DSP和H.264/AVC视频编码标准的实时视频压缩系统,由于具有开发周期短、可靠性高、处理速度快、便于升级以及体积小、功耗低、适应性强等优点,可以为新的需求提供解决方案,研究基于通用DSP、采用先进视频压缩技术的实时视频编码器具有重要意义。为满足越来越多的高清视频采集、编码和传输的应用需求,基于TI的新一代多核DSP TMS320DM8168芯片,给出了方案的设计与实现,在该系统上实现了H.264视频编码算法,可对输入的双路1080p视频进行60 fps实时编码压缩。方案的主处理器只需一片DSP,与传统多路视频压缩方案需要多片处理器相比,这种高度集成方案降低了部件数量和物料(BOM)成本、功耗需求,缩小了PCB尺寸,提高系统集成度。