Active multi-mode-interferometer broadband superluminescent diodes

We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi-mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode-interferometer structure, the superluminescent diode exhibits 60% increase in output power and 43% reduction in the differential resistance compared with the uniform waveguide width superluminescent diode fabricated from the same wafer. Our device produces an emission spectrum as wide as 103.7 nm with an output power of 2.5 mW at 600 mA continue-wave injection current. This broadband emission spectrum makes the axial resolution of the optical coherence tomography system employing the superluminescent diode to 6 μ m in theory, which is high enough for most tissue imaging.     

双注入区量子点超辐射发光管的数值模拟

数值模拟了结构参数(超辐射区腔长和脊宽,光放大区腔长和张角)对双注入区量子点超辐射发光管器件性能(光谱和功率等)的影响。结果表明,当器件超辐射区注入电流和放大区注入电流均固定时,随着超辐射区腔长的增加,输出光谱中激发态强度减弱,基态强度先增强后减弱;随着放大区腔长的增加,输出光谱中基态强度增加,激发态强度先增加后减弱。超辐射区脊宽越大,逆向光波耦合到超辐射区的耦合系数越大,输出光强度越小。放大区张角越大,逆向光波耦合到超辐射区的耦合系数越小,输出光强度越小。为设计和优化该类型器件结构提供一定的依据。