Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization

Journal of Materials Science - Although chalcogenide materials continue to generate considerable interest due to great potentials for various optoelectronic devices, annealing for a long time in...     

Detection of crowdedness in bus compartments based on ResNet algorithm and video images

Multimedia Tools and Applications - The crowding in bus is an important factor affecting passenger satisfaction and bus dispatching level. However, how to use video images to detect crowding...     

Editorial: the March 2022 cover paper

Journal of Materials Science -     

Torque Transfer to a Conducting Particle Using the Lorentz Force

Semiconductors - In this work, we discuss for the first time the principle of rotation in the constant electric field of a conducting particle with participation of the Lorentz force, which ensures...     

Comparison of the Parameters of UWB Signals for Comparing the Characteristics of the Human Visual System and Matrix Receivers

Journal of Communications Technology and Electronics - A quantitative comparison of the spectral characteristics of the human visual system and matrix photodetectors is carried out. Criteria for a...     

Use of Nuclear Energy in Outer-Space Systems

Atomic Energy - The history and direction of further development of space nuclear energetics are examined. The functional diagram and principle of operation of a promising, powerful,...     

A Hybrid Analytic Model for the Effective Prediction of Different Stages in Chronic Kidney Ailments

Wireless Personal Communications - Chronic kidney disease (CKD) is a gradual loss of kidney function over the period of time and it is irrevocable once functionality reaches the critical state....     

用于射频滤波器的LN单晶薄膜XBAR的性能研究

基于铌酸锂(LN)薄膜的横向激发体声波谐振器(XBAR)能够兼具大机电耦合系数(K²)和高谐振频率(f)特性，有望满足5G应用的频段要求。然而，常规LN薄膜单层XBAR结构的温度稳定性较差，频率温度系数(TCF)较低。该文提出一种具有SiO₂温度补偿层的SiO₂/LN双层结构XBAR，并建立了精确分析层状结构XBAR的有限元模型。理论分析表明，该双层结构XBAR上激励的主模式是一阶反对称(A1)兰姆波。通过合理优化结构参数配置，能够获得高谐振频率(f~4.75 GHz)和大机电耦合系数(K²~8%)，同时其温度稳定性也得到显著改善(TCF~-36.1×10^-6/℃)，相较于单层XBAR结构提高了近70×10^-6/℃，这为研制温补型高频、大带宽声学滤波器提供了理论基础。