Wafer-Level Integration Technique of Surface Mount Devices on a Si-Wafer With Vibration Energy and Gravity Force

This paper reports about a novel wafer-level integration technique of discrete surface mount devices (SMDs). It enables wafer-level mounting of plural kinds of SMDs on a silicon (Si)-wafer using vibration and gravity force. Deep holes with 400-m depth are formed on the surface of a Si-wafer by deep reactive ion etching process after general integrated circuit process for positioning of SMDs. A non-conductive adhesive (CYTOP) are coated on the deep holes and it is used to fix the aligned SMDs. SMDs are distributed on a Si-wafer mounted on vibration generator, and then a vibration is applied. The SMDs migrate due to the reduced friction between the wafer surface, and they drop into the holes on the silicon wafer. The size of the holes has an appropriate clearance to the size of SMD. In order to align two or more kinds of SMDs, sizes of the deep holes on a Si-wafer are adjusted to the size of each SMD. SMDs with the largest size are dropped into the holes first, and then the secondary large SMDs are dropped into the holes with the corresponding size. SMDs are finally connected electrically by wire bonding at the final step. In the experiment, two different sizes of SMD were successfully mounted into all the holes on a Si-wafer automatically. This technology will be a wafer-level process technology which is very promising to integrate two or more kinds of discrete elements.     

Lasing at 1.28 /spl mu/m of InAs-GaAs quantum dots with AlGaAs cladding layer grown by metal-organic chemical vapor deposition

We report the device characteristics of stacked InAs-GaAs quantum dot (QD) lasers cladded by an Al/sub 0.4/Ga/sub 0.6/As layer grown at low temperature by metal-organic chemical vapor deposition. In the growth of quantum dot lasers, an emission wavelength shifts toward a shorter value due to the effect of postgrowth annealing on quantum dots. This blueshift can be suppressed when the annealing temperature is below 570/spl deg/C. We achieved 1.28-/spl mu/m continuous-wave lasing at room temperature of five layers stacked InAs-GaAs quantum dots embedded in an In/sub 0.13/Ga/sub 0.87/As strain-reducing layer whose p-cladding layer was grown at 560/spl deg/C. From the experiments and calculations of the gain spectra of fabricated quantum dot lasers, the observed lasing originates from the first excited state of stacked InAs quantum dots. We also discuss the device characteristics of fabricated quantum dot lasers at various growth temperatures of the p-cladding layer.     

A transgenic mouse line with alpha-1,3/4-fucosyl-transferase cDNA: production and characteristics

cDNA of human alpha-1,3/4-fucosyltransferase (Fuc-TIII) was placed under the control of the chicken beta-actin promoter and cytomegalovirus enhancer, then introduced into male pronuclei of fertilized mouse eggs. A transgenic mouse line thus obtained exhibited enhanced expression of Lex (4C9) antigen in endothelial cells located in the glomerulus, sinusoidal capillaries of the liver and capillaries of the heart. Furthermore, in the transgenic mice, sialyl dimeric Lex (FH6) and sialyl Lea (2D3) antigens were strongly expressed in the glomerular endothelial cells.     

Microbolometer Terahertz Focal Plane Array and Camera with Improved Sensitivity in the Sub-Terahertz Region

Journal of Infrared, Millimeter, and Terahertz Waves - A pixel in an uncooled microbolometer terahertz (THz) focal plane array (FPA) has a suspended structure above read-out integrated circuit...