Selective crosslinking reaction in polymer blends. III. The effects of the crosslinking of dispersed EPDM particles on the impact behavior of PP/EPDM blends

The selective dynamic crosslinking reaction by means of the N,N'-m-phenylene–bismaleimide/poly-(2,2,4-trimethyl-1,2-dihydroquinoline) system was carried out on PP/EPDM blends and its effect on the Izod impact strength (IIS) was investigated. Three series of PP/EPDM combinations were adopted to establish different morphologies. In each series, the EPDM wt % varied from 5 to 30 at 5 wt % intervals. The system crosslinked the EPDM particles selectively without PP degradation and change of morphology. Following the crosslinking, the IIS at 23, ?10, and ?30°C increased in all blends, and the critical EPDM wt % at 23°C necessary to cause the dramatic IIS increase was lowered. The increase in interfacial adhesion is considered to be the most important factor necessary for the improvement. The nucleation effect of the crosslinked particles and the decrease of crystallinity of the EPDM were also considered to contribute to the improvement in the IIS. Impact fracture energy absorption can thus be changed by adjusting the magnitude of the interfacial adhesion by the dynamic crosslinking even at essentially the same morphology. © 1995 John Wiley & Sons, Inc.     

Precise control of HgCdTe growth conditions for molecular beam epitaxy

A Hg_1-xCd_xTe growth method is presented for molecular beam epitaxy, which precisely controls growth conditions to routinely obtain device quality epilayers at a certain specific composition. This method corrects the fluctuation in composition x for run-to-run growth by feedback from the x value for the former growth to the fluxes from CdTe and Te cells. We achieved standard deviation Δx/ x of 3.3% for 13 samples grown consecutively. A substrate temperature drop was found during growth, which considerably degrades the crystal quality of epilayers. In this method, this drop is greatly diminished by covering the holder surface with a heavily doped Si wafer. Finally, etch pit density of 4 x 10⁴ cm-² and full width at half-maximum of 12 arc-s for the x-ray double-crystal rocking curve were obtained as the best values.     

Microbolometer Terahertz Focal Plane Array and Camera with Improved Sensitivity in the Sub-Terahertz Region

Journal of Infrared, Millimeter, and Terahertz Waves - A pixel in an uncooled microbolometer terahertz (THz) focal plane array (FPA) has a suspended structure above read-out integrated circuit...