人工神经网络在覆盖拉延件要领设计中的应用

结合覆盖拉延件的特点，分析了在工艺要领设计中应用人工神经网络的必要性和可能性，同时对隐层节点数、网络权重总数及样本总数之间的关系提出了一些看法。     

The influence of dopant species on thermal stability of NiSi film

We investigated the relationship between thermal stability of NiSi films and the implanted dopant species on Si substrates. The most stable NiSi layer appeared on Boron-implanted Si substrate, where the formation of pseudo-epitaxial transrotational structure was observed, just in case that the dose of boron is more than 5e15 atoms/cm². This unique crystallographic orientation of NiSi film on Boron-implanted substrate is a key role of thermal stability because thermal stress at grain boundary can be diminished by peculiar arrangement of transrotational domains, owing to the anisotropy in coefficient of thermal expansion (CTE) of NiSi.     

Diffuse diffracted features and ordered domain structures in GalnP layers grown by organometallic vapor phase epitaxy

Transmission electron diffraction (TED) and transmission electron microscope (TEM) studies have been made of organometallic vapor phase epitaxial Ga_xIn_1−xP layers (x ≈ 0.5) grown at temperatures in the range 570–690°C to investigate ordering and ordered domain structures. TED and TEM examination shows that the size and morphology of ordered domains depend on the growth temperature. The ordered domains change from a fine rod-like shape to a plate-like shape as the growth temperature increases. The domains are of width 0.6∼2 nm and of length 1∼10 nm. Characteristic diffuse features observed in TED patterns are found to depend on the growth temperature. Extensive computer simulations show a direct correlation between the ordered domain structures and such diffuse features. A possible model is suggested to describe the temperature dependence of the ordered domain structure.     

Preparation of c-BN films by RF sputtering and the relation of BN phase formation to the substrate bias and temperature

This paper deals with the deposition of cubic boron nitride (c-BN) films by radio frequency (RF) magnetron sputtering. The nearly pure c-BN films have been prepared on Si(100) substrates using hexagonal boron nitride (h-BN) targets. Argon gas mixed with nitrogen gas was used as sputtering gas. The deposited films were characterized by Fourier transform infrared (FTIR) spectroscopy and transmission electron diffraction (TED). A ‘temperature-bias' phase diagram has been worked out. It indicates that the c-BN phase prefers the relative high temperature and negative bias. An opinion was presented that the c-BN nuclei grow discontinuously with every time the ‘thermal spike' coming.     

离子注入中硼在Rp缺陷的析出模型

建立了一种析出模型用来模拟硼在硅中的扩散现象,描述了硼原子与离子注入引起的R.缺陷之间的相互作用,解释了非活性硼峰形成的原因,与实验结果能够较好的吻合,为研究硼的扩散机理提供了很好的依据,为超浅结工艺模拟提供了基本模型,对于开发下一代集成电路研制的工艺模拟程序有着非常重要的意义.     

Methods of defect-engineering shallow junctions formed by B+-implantation in Si

Control of dopant diffusion during high-temperature cycling is critical in forming shallow electrical junctions in silicon as needed in integrated-circuit manufacturing. However, junctions formed by implantation can be anomalously deep due to a transiency associated with ion-induced defects which greatly enhances dopant diffusion. The purpose of this work was to investigate methods of defect engineering the implantation process to control or eliminate transient-enhanced diffusion (TED). TED of boron has been attributed to excess interstitials introduced into the lattice during implantation, known as the plus-one model. Effects of pre-amorphization (i.e., amorphization prior to dopant implantation using isoelectric ions) on TED of boron, and particularly, the role of the end-of-range (EOR) defects at the amorphous-crystalline interface, are discussed. These EOR defects were varied by altering the implantation conditions during pre-amorphization. Also, other means of controlling the transiency are discussed, in particular, the use of high-energy ions to introduce excess vacancies into the lattice where dopant diffusion occurs. These vacancies are shown to interact with the excess interstitials introduced during dopant implantation to suppress TED.     

CPM信号的定时-相位联合估计算法

针对CPM信号同步问题,在判决数据辅助的基础上提出一种联合定时-相位估计算法。该算法用Laurent分解表示CPM信号,由定时-相位联合似然函数得到定时误差检测器和相位误差检测器,找出瞬时梯度,迭代求解恢复出定时和相位信息。通过分析二进制部分响应CPM中的常见形式PCM/FM信号,提出一种联合定时-相位估计的实现方案。在加性高斯白噪声信道上的仿真结果表明,该算法适用于二进制部分响应CPM信号,定时和相位估计性能都逼近理想曲线。     

针对机场行李传送监控视频的侵入者检测

随着智能监控技术的快速发展,越来越多的公共场合监控系统由人力监控向计算机辅助监控转化。机场传送仓作为机场中的重点安全区域,对其进行侵入者的实时检测是十分必要的。人体检测是视觉分析领域的重要组成部分,其在视频监控领域当中有着广泛的应用。针对机场行李传送监控视频,提出了一种用于区分人体与常规行李的视觉特征,并且利用该特征实现了一个实时的智能视频监控系统,用于检测传送仓中的侵入者。实验结果表明,该系统降低了人力资源的消耗,且有效地降低了侵入者的漏报率,从而提高监控质量。     

n型4H-SiC材料中位错的电学特性研究

研究位错的电学特性对于研究器件可靠性具有重要意义.文章利用拉曼散射技术在室温条件下研究了n型4H-SiC材料中位错电学特性.结果表明:螺型位错(TSD)、刃型位错(TED)的电子浓度均高于无位错区,且TSD电子浓度高于TED.结合位错结构分析认为:TED中心的半原子面存在不饱和Si键,该键通过吸附电子使其饱和并达到稳定状态,因此TED中心俘获了比无位错区更多的电子;TSD结构中,位错区域原子间的拉应力导致该区域Si原子电负性增高,因而俘获电子形成比无位错区高的电子分布.