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采用气相色谱-离子迁移谱(gas chromatography-ion mobility spectrometry,GC-IMS)对洋葱浆馕6 种不同贮藏条件下挥发性物质进行分析,包括低温贮藏、室温贮藏、真空贮藏、脱氧贮藏、保鲜剂贮藏和保鲜剂结合脱氧贮藏。研究表明:在洋葱浆馕中共鉴定出66 种挥发性风味物质,其中包括醇类9 种、酮类4 种、醛类18 种、酯类4 种、呋喃衍生物3 种,酸类1 种和未能识别的化合物27 种。随着贮藏时间的延长,低温贮藏和真空贮藏洋葱浆馕在贮藏期内醛类挥发性有机物基本不变,其他处理组的醛类挥发性有机物在贮藏期内变化呈降低的趋势。结合主成分分析和欧氏距离可以发现低温贮藏和其他贮藏方式的第0天挥发性物质种类和浓度较为接近,主成分分析图中点的位置也相聚在一起,说明低温贮藏馕的挥发性物质变化不明显。该研究建立不同贮藏方式洋葱浆馕挥发性气味指纹图谱,可视化出洋葱浆馕挥发性成分轮廓,为洋葱浆馕贮藏期间风味变化规律提供信息。  相似文献   
3.
Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm2/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm2/Vs, low resistivity of 5.3 × 10?4 Ωcm, and good transmittance of 83.3 %.  相似文献   
4.
以p型共轭有机小分子2,7二辛基[1]苯并噻吩并[3,2‐b]苯并噻吩(C8‐BTBT)作为底栅顶接触有机薄膜晶体管(OTFT)的有源层,采用浸渍提拉法、喷墨打印法和真空蒸镀法三种制备工艺,探究半导体薄膜载流子迁移率与结晶形貌的关系,发现不同工艺下有机小分子呈现出不同的生长行为和结晶情况,在很大程度上决定了OTFT器件性能的优劣;此外,通过XRD分析研究了退火处理对C8‐BTBT结晶的影响。结果表明,真空蒸镀制备的薄膜具有更高的结晶度、衬底覆盖率高,并且呈现出SK(Stranski‐Krastanov)模式的结晶生长特征,相应器件中陷阱密度最低,迁移率高达5.44 cm^2·V^-1·s^-1,开关比超过106;且退火处理会严重破坏C8‐BTBT薄膜的结晶。因此,控制半导体层的生长行为,提升半导体层的覆盖率和结晶度是制备高性能共轭小分子OTFT器件的有效途径。  相似文献   
5.
为了获得一种稳定可控的能源,提出一种栅控石墨烯热电器件。通过对石墨烯通道的载流子输运机理的分析,获得了温度和栅压对通道电阻的影响。依据半经典Mott公式推导了石墨烯塞贝克系数的表达式,同时给出了石墨烯的电导率和热导率模型。最后通过有限元分析(FEA)建模获得不同栅压条件下的器件温度,当栅极电压VB=0 V时,石墨烯热电器件热端和冷端温度差为30 K;当VB=6 V时,最大温差达到50 K;当VB=30 V时,最小温差只有10 K。结果表明,栅压对热电器件的性能有明显的调控性。该研究可为石墨烯热电器件的设计提供理论参考。  相似文献   
6.
2,9-DPh-DNTT, an isomeric of diphenyl-dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b] thiophene (DPh-DNTTs), is an emerging candidate of high mobility organic semiconductor material. In this work, a high performance 2,9-DPh-DNTT organic thin-film transistor (OTFT) is fabricated by the method of weak epitaxy growth. The quality of 2,9-DPh-DNTT thin film was significantly improved when its epitaxial layer grows on an inducing layer of para-sexiphenyl (p-6P). Continuous large-area, highly ordered and terraced 2,9-DPh-DNTT polycrystalline thin films are obtained. The hole mobility of as-fabricated 2,9-DPh-DNTT thin-film transistor reaches up to 6.4 cm2 V−1s−1. This simple process of preparing high mobility 2,9-DPh-DNTT thin-film transistor supplies a facile route of large-area OTFT fabrication.  相似文献   
7.
To date, the only effective means to respond to the spreading of the COVID-19 pandemic are non-pharmaceutical interventions (NPIs), which entail policies to reduce social activity and mobility restrictions. Quantifying their effect is difficult, but it is key to reducing their social and economic consequences. Here, we introduce a meta-population model based on temporal networks, calibrated on the COVID-19 outbreak data in Italy and applied to evaluate the outcomes of these two types of NPIs. Our approach combines the advantages of granular spatial modelling of meta-population models with the ability to realistically describe social contacts via activity-driven networks. We focus on disentangling the impact of these two different types of NPIs: those aiming at reducing individuals’ social activity, for instance through lockdowns, and those that enforce mobility restrictions. We provide a valuable framework to assess the effectiveness of different NPIs, varying with respect to their timing and severity. Results suggest that the effects of mobility restrictions largely depend on the possibility of implementing timely NPIs in the early phases of the outbreak, whereas activity reduction policies should be prioritized afterwards.  相似文献   
8.
The n-type thermoelectric Bi1.9Lu0.1Te3 was prepared by microwave-solvothermal method and spark plasma sintering. The magnetic field and temperature dependences of transverse magnetoresistance measured within temperature 2–200 K interval allow finding the peculiarities characteristic for strongly disordered and inhomogeneous semiconductors. The first peculiarity is due to appearance of linear-in-magnetic field contribution to the total magnetoresistance reflected in a crossover from quadratic magnetoresistance at low magnetic fields to linear magnetoresistance at high magnetic fields. The linear magnetoresistance can result from the Hall resistance picked up from macroscopically distorted current paths due to local variations in stoichiometry of the compound studied. The second peculiarity is that both linear magnetoresistance magnitude and crossover field are functions of carrier mobility which is in agreement with the Parish and Littlewood model developed for disordered and inhomogeneous semiconductors. An increase in the mobility due to a decrease in temperature is accompanied by an increase in the magnetoresistance magnitude and a decrease in the crossover field. Finally, the third peculiarity is related to the remarkable deviation of the total magnetoresistance measured at various temperatures from the Kohler's rule. Presence of strong inhomogeneity and disorder in the Bi1.9Lu0.1Te3 structure concluded from the magnetoresistance peculiarities can be responsible for the remarkable reduction in the total thermal conductivity of this compound.  相似文献   
9.
Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.  相似文献   
10.
As a symbol of sharing economy, ride-hailing services have spread to Asia, where various forms of services have been established according to the existing socio-technical regimes, including legal, policy, and environmental concerns. China, in particular, has accepted ride-hailing services by revising existing institutions. This study analyzes China’s acceptance of ride-hailing services in the socio-technical system context set up for legacy services. Simulation modeling, combined with transition theory and an agent-based model, is used to analyze the data. This study calculates consumer disutility based on mobility market share, reflecting consumer preference, and predicts the sustainability of ride-hailing services. The simulation results conclude that legalization and socio-technical context are of importance for sustainable mobility.  相似文献   
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