中兴ZXG10—OMC操作维护中心（续）

１．３网管接入方案中兴ＺＸＧ１０ＯＭＣＲ支持对上级网管中心（ＮＭＣ）提供标准的Ｑ３接口接入,对内则通过Ｑｘ接口对多套基站系统（ＢＳＳ）进行管理。这种方案可以减少对现有系统的影响和投资,ＯＭＣＲ可以提供内Ｑ３接口和外Ｑ３接口。通过内Ｑ３接口,本地Ｍ...     

CMOSIC中浮置栅缺陷的电气模型：I_（DDQ）测试的意义

ＣＭＯＳＩＣ中浮置栅缺陷的电气模型：Ｉ＿（ＤＤＱ）测试的意义＝ＥｌｅｃｔｒｉｃａｌｍｏｄｅｌｏｆｔｈｅｆｌｏａｔｉｎｇｇａｔｅｄｅｆｅｃｔｉｎＣＭＯＳＩＣ＇ｓ：ｉｍｐｌｉｃａｔｉｏｎｓｏｎＩ＿（ＤＤＱ）ｔｅｓｔｉｎｇ［刊，英］／ＣｈａｍｐｅｃＶ．Ｈ．...     

一种用于大功率超声清洗换能器的压电材料

通过对ＰｂＭｅ（Ｃａ＿（１／４）Ｍｎ＿（１／４）Ｎｂ＿（１／２））＿ｘＴｉ＿ｙＺｒ＿ｚＯ＿３系材料的研究，并以Ｓｒ￣（２＋）、Ｍｇ￣（２＋）等价取代Ｐｂ￣（２＋），以ＣｅＯ＿２作为添加改性剂，研制出机电耦合系数高（ｋ＿ｐ＝０．６２）、机械品质因数高（Ｑ＿Ｍ＝２０３６）、机械强度高（抗张强度为４４２ＭＰａ）、经时稳定性好的适用于大功率超声清洗换能器的压电材料。     

QCS──新一代的无线通信系统

本文介绍了由美国ＱＵＡＬＣＯＭＭ通信公司最新推出的无线通信系统ＱＣＳ（ＱＵＡＬＣＯＭＭＣＯｍｍｕｎｉｃａｔｉｏｎＳｙｓｔｃｍ），它采用日益成熟的ＣＤＭＡ技术，并具有独特的开放式网络结构，具有优良的性能和相当大的价格优势，ＱＣＳ支持多种实际应用，可以十分便利地添加新的服务项目。     

Cr2O3改性PbTiO3压电陶瓷材料的研究

研究了Ｃｒ２Ｏ３作为改性添加剂对（ＰｂＳｍ）（ＴｉＭｎ）Ｏ３系压电陶瓷介电及压电性能的影响．实验表明，添加适量的Ｃｒ２Ｏ３能得到压电性能好、压电各向异性大、压电稳定性高的优良材料，其ｋｔ＝４５％～５０％，ｋｔ／ｋｐ＝１５～１８，ＴＣｆｔ３＝－０．８～－６ｐｐｍ／℃．因此，在研究、开发高性能压电材料过程中，Ｃｒ２Ｏ３不失为一种优良的改性材料．     

共沉淀法制备Ba(Mg_(1/3)Ta_(2/3))O_3陶瓷的研究

对用化学共沉淀法制备Ｂａ （Ｍｇ１／３Ｔａ２／３） Ｏ３ （ＢＭＴ） 陶瓷及其烧结特性进行了研究。结果表明其烧结温度比用传统方法降低了１８０～２５０℃。在１ ４００℃时获得了致密的陶瓷,其体积密度达理论密度的９６％ ,晶粒排列紧密,介电特性：Ｑ×ｆ＝ ６５ ０００ ＧＨｚ,εｒ＝ ２３～２５,在ｆ＝ １０ＧＨｚ,ｔ＝ － ２０～＋ ６０℃时τｆ ＝ （０～３）×１０－ ６℃－ １。     

光盘的过去、现在和未来

ＭＤ（小型光盘）已在欧洲及日本开始普及，价格下降后可能取代盒式磁带；ＣＤＲＯＭ已经成为个人机标准装备，并且是应用软件、游戏软件等的主要发行形式；ＣＤＲＷ（读／写）光盘上市；ＭＯ（磁光）盘和ＣＤＲ（一次写入型光盘）应用领域扩大；可写入型光盘都在增...     

中温热补偿MLC陶瓷

本文研究了ＢａＯ－ＴｉＯ２－Ｎｄ２Ｏ３（ＢＴＮ）系陶瓷的结构和介电性质。在该系统中加入适量的玻璃和添加剂，获得了一系列中温热补偿独石电容器（ＭＬＣ）陶瓷，实验结果证实：当Ｔｉ／Ｂａ＝１．００３时，ＢＴＮ系陶瓷的居里温度（Ｔｃ）随Ｎｄ２Ｏ３含量的增大而产生逐步漂移。用ＸＲＤ确定了陶瓷的主晶相，ＳＥＭ照片显示出晶粒尺寸对Ｎｄ＾３＋含量的依赖关系，分析了Ｔｉ／Ｂａ比对陶瓷介电系数温度系数（ａｅ）的影响。     

MgO－TiO_2－ZnO系高压MLC瓷料的研究

研究了ＭｇＯ－ＴｉＯ２－ＺｎＯ（ＭＴＺ）系高压ＭＬＣ介质陶瓷的结构和介电性能。ＸＲＤ分析表明：其主晶相是六方晶系ＭｇＴｉＯ３以及少量的ＺｎＴｉＯ３、ＣａＴｉＯ３附加晶相。此种瓷料制成多层陶瓷电容器，具有耐高压、高工作频率等优点。     

MgO－TiO_2－ZnO系高压MLC瓷料的研究

研究了ＭｇＯ－ＴｉＯ２－ＺｎＯ（ＭＴＺ）系高压ＭＬＣ介质陶瓷的结构和介电性能。ＸＲＤ分析表明：其主晶相是六方晶系ＭｇＴｉＯ３以及少量的ＺｎＴｉＯ３、ＣａＴｉＯ３附加晶相。此种瓷料制成多层陶瓷电容器，具有耐高压、高工作频率等优点。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.