应用于数字广播的镜像抑制混频器的设计

在二次变频低中频结构的DRM／DAB数字广播射频极宽频带（148．5kH～1492MHz）接收机中,为了实现良好的镜像抑制性能,第二次变频采用双正交混频器结构。与单正交结构相比较,双正交型混频器具有更优的镜像抑制性能以及更高的成品率。考虑到宽带以及系统输出信号的信噪比,本文中采用了结合多级多相滤波器的双正交下变频有源混频器,在满足镜像抑制要求的的同时提供一定的增益。经理论分析和实际仿真结果表明,该结构的混频器具有良好的镜像抑制性能,镜像抑制比在DRM模式下IIR〉48dB,DAB模式下IIR〉55dB,而且对正交信号幅度和相位的失配不敏感,能够满足数字广播接收机射频前端的所需指标要求。目前整个芯片正在测试中,最终芯片将在Himalaya公司的接收机上进行整机验证。     

0.18μm CMOS宽带镜像抑制混频器的设计

采用TSMC 0.18 μm CMOS工艺,设计了一种位于3.0~3.4 GHz之间,用于雷达接收机前端的宽带镜像抑制混频器.整个混频器包含3个多相滤波器,1个本振缓冲放大器,4个核心Gilbert混频器单元.通过ADS2003仿真,镜像抑制度为60 dB,达到预期结果.利用设计出的宽带镜像抑制混频器,可以直接和低噪声放大器组成接收前端电路,避免片外滤波器的使用,大大提高了集成度.     

用FPGA实现数字下变频

在接收信号的数字化、软化的实现中,数字下变频起着重要的作用。本文首先介绍了数字下变频的组成结构,然后详细分析了数字下变频的工作原理,描述了在实现数字下变频时,设计方案所采用的高效滤波器——CIC滤波器和多相抽取滤波器的结构和原理。最后,用通过Simulink对数字下变频的性能进行了仿真。在仿真的基础上使用Insigllt公司的FPGA开发系统,用测试电路实测了数字下变频的性能。     

一种超宽带、高线性度正交调制器

基于SiGe工艺设计了一款超宽带、高线性度的正交调制器电路,主要包含本振移相模块、混频器模块和输出模块。其中本振正交信号产生电路采用RC多相滤波器结构,在超宽带下生成正交信号,并采用限幅放大器对信号的幅度和相位进行校准;混频器采用Gilbert双平衡混频器电路结构,并使用电阻负反馈结构和电感峰化技术,可满足超宽带、高线性度、高镜像抑制的设计要求;输出模块采用有源巴伦实现差分转单端功能。芯片供电电压为5 V,工作频率范围为50 MHz～6 GHz,输出1 dB压缩点最高可达到14.7 dBm@2 GHz,边带抑制为-60 dBc,载波泄露为-44.8 dBm,噪底可低至-166 dBm/Hz。可广泛应用于各类接收机和通信系统中。     

蓝牙接收机中镜像信号的抑制

介绍了一种用于蓝牙低中频接收机的镜像抑制电路,包括改进的吉尔伯特型混频器（采用折叠级联输出）和跨导电容复数滤波器,二者利用电流信号直接耦合．整个电路用TSMC 0.35μm单层多晶硅CMOS数字工艺实现．仿真和测试结果表明：镜像抑制比大于20dB,满足蓝牙接收机的要求,整个电路使用3.3V电源供电,功耗约为2.7mW．     

用于宽带实时数字下变频的高效二次变频电路

提出一种高效二次变频结构,分两步将中频信号搬移至基带.首先,通过一种将混频器置于滤波器之后的多相滤波宽带数字下变频结构将中频信号搬移至基带附近.然后通过传统的正交混频将信号搬移至基带,能节省滤波器资源,有效地降低采样率和数据处理速率,解决超宽带数字中频处理的难题.最后通过仿真和实验验证结构的正确性.     

一种接收前端三级低噪声放大器的设计

针对单片雷达接收机中对低噪声放大器（LNA）的要求,采用CMOS0．18m工艺设计了三级级联的镜像抑制低噪声放大器。通过在低噪声放大器中接入陷波滤波器,实现对镜像信号的衰减,从而减小了后端混频器电路的设计难度。在ADS中对放大器进行仿真,结果表明：在最大供电电压为5V、信号频段为3．0～3．2GHz时,中频输出225MHz,功率增益31dB,噪声系数（NF）0．5dB,输入输出1—dB点的功率分别为-19．5和11．5dBm,对镜像信号的抑制度达22dB。     

基于优化混频器的数字下变频系统的设计与实现

在利用频谱分析仪对信号进行实时频谱监测过程中,针对其数字下变频模块精度不高、逻辑资源耗费大、难以对数字中频信号进行实时处理的问题,本文对传统数字下变频系统的混频器模块进行优化并提出一种高效的数字下变频(DDC)系统。首先,设置模数转换器(ADC)的采样率为载波中心频率的4倍且采样率转换比率和子ADC的数量是4的正整数倍,此时混频器可以完全合并到多相CIC抽取滤波器中。接着,基于优化的混频器构建一套DDC系统,并为每个系统节点合理分配采样率转换倍数。最后,加入CIC补偿滤波器,提高数据传输过程中的精度。实验结果表明,与传统DDC相比,优化后的DDC资源消耗减少,数据精度误差从1.7%减小到0.8%。基本满足功耗低、精度高、稳定运行等要求。     

采用介质谐振器的毫米波镜像回收混频器

用介质谐振器作带阻滤波器制作毫米波镜像回收混频器。在理论分析的基础上,给出了实际电路。实验结果表明,用介质谐振器制成的镜像回收混频器,在信号口可以使变频损耗减小约1.1dB,并具有26dB以上的镜像抑制比。     

一种接收前端三级低噪声放大器的设计

针对单片雷达接收机中对低噪声放大器（LNA）的要求,采用CMOS0．18,um工艺设计了一个三级级联的镜像抑制低噪声放大器。通过在低噪声放大器中接入限波滤波器,实现对镜像信号的衰减,从而减小了后端混频器电路的设计难度。在ADS中对设计的放大器仿真,其结果为：最大供电电压为5V情况下,信号频段为3．0～3．2GHz,中频输出为225MHz,功率增益≥31dB,噪声系数（FN）≤O．5dB,1dB点的输入／输出功率分别为-19．5dBm和11．5dBm,对镜像信号的抑制度达22dB。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.