一种热感集成电路功耗模型及其对动态电压调整技术的影响

提出了一种新型热感功耗模型,该模型能够准确估计出电压调整情况下的功耗和温度.实验结果表明如果忽略热效应,泄漏功耗将会被低估最高达52%.使用电压调整技术对电路的能量消耗和温度进行协同优化时,两者具有不一致的优化方向.温度是未来集成电路发展的一个重要限制因素,而温度优化方法可以降低电路温度最高达12℃,同时其能耗的增长低于最优解的1.8%.     

两种新型CMOS带隙基准电路

文章介绍了两种CMOS带隙基准电路.它们在传统带隙基准电路的基础上,采用了低压共源共栅电流镜提供偏置电流,降低了功耗,减小了沟道长度调制效应带来的误差并使电路可以工作在较低的电源电压下;采用运放的输出作为共源共栅电流镜的偏置电压,使基准电压不受电源电压变化的影响.其中一种电路,还通过两个串联二极管的原理提高△VBE,从而减小了运放失调的影响.仿真结果表明,在工艺偏差、电源电压变化±10%以及温度在-20至125℃范围内变化的情况下,两种CMOS带隙基准的输出电压分别是1.228+0.003V和1.215±0.003V,温度系数仅为33.7ppm/℃和34.1ppm/℃;在电源电压分别大于2V和2.8V时,电源电压的变化对这两种基准的输出电压几乎没有影响;在33v电源电压下两个电路的功耗分别小于0.1mW和0.34mW.     

VSF:CMOS组合电路的静态功耗评估模型

为了解决利用晶体管级电路模拟分析CMOS电路静态功耗时模拟时间随电路规模增大迅速增加的问题,在分析晶体管堆叠效应对标准单元泄漏电流影响的基础上,定义了归一化堆叠系数和电路等效堆叠系数的概念,提出了基于电路有效堆叠系数的静态功耗评估模型.该模型可用于CMOS组合电路静态功耗估算和优化.实验结果表明使用该模型进行静态功耗估算时,不需要进行Hspice模拟.针对ISCAS85基准电路的静态功耗优化结果表明,利用该模型能够取得令人满意的静态功耗优化效果,优化速度大大提高.     

VSF:CMOS组合电路的静态功耗评估模型

为了解决利用晶体管级电路模拟分析CMOS电路静态功耗时模拟时间随电路规模增大迅速增加的问题,在分析晶体管堆叠效应对标准单元泄漏电流影响的基础上,定义了归一化堆叠系数和电路等效堆叠系数的概念,提出了基于电路有效堆叠系数的静态功耗评估模型.该模型可用于CMOS组合电路静态功耗估算和优化.实验结果表明使用该模型进行静态功耗估算时,不需要进行Hspice模拟.针对ISCAS85基准电路的静态功耗优化结果表明,利用该模型能够取得令人满意的静态功耗优化效果,优化速度大大提高.     

45mm低功耗、高性能Zipper CMOS多米诺全加器设计

提出了电荷自补偿技术,此技术利用P型多米诺电路动态结点的放电对N型多米诺电路的动态结点充电,并在此技术基础上综合应用双阈值技术和多电源电压技术,设计了新型低功耗、高性能Zipper C?dOS多米诺全加器.仿真过程中提出了功耗分布法,精确找到了电荷自补偿技术的最优路径.仿真结果表明,在相同的时间延迟下,与标准Zipper CMOS多米诺全加器、双阈值Zipper CMOS多米诺全加器、多电源电压Zipper CMOS多米诺全加器相比,新型Zipper CMOS多米诺全加器动态功耗分别减小了37%、35%和7%,静态功耗分别减小了41%,20%和43%.最后,分析并得到了新型全加器漏电流最低的输入矢量和时钟状态.     

45nm低功耗、高性能Zipper CMOS多米诺全加器设计

提出了电荷自补偿技术,此技术利用P型多米诺电路动态结点的放电对N型多米诺电路的动态结点充电,并在此技术基础上综合应用双阈值技术和多电源电压技术,设计了新型低功耗、高性能Zipper CMOS多米诺全加器.仿真过程中提出了功耗分布法,精确找到了电荷自补偿技术的最优路径.仿真结果表明,在相同的时间延迟下,与标准Zipper CMOS多米诺全加器、双阈值Zipper CMOS多米诺全加器、多电源电压Zipper CMOS多米诺全加器相比,新型Zipper CMOS多米诺全加器动态功耗分别减小了37%、35%和7%,静态功耗分别减小了41%,20%和43%.最后,分析并得到了新型全加器漏电流最低的输入矢量和时钟状态.     

基于切片分析的CMOS组合电路贝叶斯动态功耗模型

为改善周期精确级功耗分析的准确度和速度问题,使用多维特征参数建立贝叶斯推理的动态功耗模型.基于功耗分布与电路内部节点状态的分析,发现仅使用端口信息作为参数的不足.定义了门单元级数的计算和对应切片的概念,提出使用切片分析的技术提取电路内部关键层的翻转密度作为参数,与端口信息共同参与贝叶斯推理.基于ISCAS85基准电路的实验结果表明,该方法使原始模型的误差降低21.9%,均方差降低25.0%,同时保持了相对现有门级功耗分析700倍的加速比.     

一种适用于门级网表的混合式静态功耗优化方法

进入深亚微米集成电路设计阶段,静态功耗所占整体功耗的比例快速增大,使之成为当前设计流程中的关键优化步骤。该文提出一种适用于门级网表的混合式静态功耗优化方法。该方法结合了整数规划和启发式算法,以减小电路时序裕量的方式换取电路静态功耗的改善。整体优化流程从一个满足时序约束的设计开始,首先利用整数规划为网表中的逻辑门单元寻找一个较低静态功耗的最优替换单元;其次结合当前所用门单元和最优替换单元的物理和电学参数,按优先级方式逐层替换电路中所有的逻辑门节点;最后利用启发式方法修复可能出现的最大延时违规情况。整体优化流程将在上述步骤中不断迭代直至无法将现有时序裕量转换为功耗的改善。针对通用测试电路的实验结果表明,采用该方法优化后电路静态功耗平均减小10%以上,最高达26%;与其它方法相比,该方法不仅大幅降低了功耗,而且避免了优化后电路最大延时的过度恶化,其最大延时违反量小于5 ps。     

马氏链在VLSI电路功耗估计中的应用

本文在介绍集成电路功耗的基础上，论述了了RT-Level对电路的动态功耗进行分析的方法。这种方法应用随机过程中的马氏链对组合电路中的动态功耗进行分析，属于静态的分析方法，已知输入信号的统计特征和电路的逻辑功能就能够对组合电路的动态功耗进行分析.     

一种性能优良稳定的微功耗CMOS电压积分器

本文提出了一种电源波动影响弱、低温飘、微功耗（〈1μw）的CMOS电压型积分器电路。它利用自偏置的恒流源电路结构以及MOSFETs的亚阈值特性产生一个nA级的恒流源，通过控制电路实现对电容充放电来获得积分电压。并且对电路结构、器件类型和器件尺寸进行了优化。仿真结果表明，得到了独立于电源电压、低温度系数、微功耗的积分电压。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.