基于MCNS DOCSIS的电缆数据传输系统

DOCSIS是HFC网络上的高速双向数据传输协议 ,基于DOCSIS的电缆数据传输系统具有充分的互操作性。介绍了电缆数据传输系统的组成和基本原理 ,论述了CM与CMTS之间的通信协议 (物理媒体子层规范、媒体接入控制层规范和数据链路层加密支持 )和工作原理     

DOCSIS2.0中上行信道多址接入方式的研究

有线电缆数据服务传输规范(DOCSIS)是为基于光纤同轴混合网(HFC)的宽带多媒体接入应用而开发的工业标准.新出台的DOCSIS2.0版本与目前广泛应用的1.x版本的一个主要差别是在上行信道接入方案中加入了同步码分多址(S-CDMA)技术.针对DOCSIS2.0与DOCSIS1.1的这一区别,着重阐述DOCSIS2.0中采用的两种多址接入技术,即高级时分多址(TDMA)技术与S-CDMA技术的性能比较,并建立模型,用MATLAB仿真它们在不同信道条件下的表现.     

电缆调制解调器的商业服务

电缆服务供应商有一个在商业市场获得成功和高额利润的大好时机。DOCSIS1.1电缆调制解调器标准第一次提供了一个保证带宽质量的机制。这对于电缆的高速数据传输能力来说是一个重要的增强。然而,像其他网络技术一样,DOCSIS1.1本身并不能提供任何独特的保证,来确保电缆接入企业的可赢利性。已证明,这一市场的可赢利性是一件难以捉摸的事情。     

DOCSIS2.0中TDMA与SCDMA性能比较

HFC网络因为其独特的优势必将在未来的多媒体通信中发挥巨大的作用。基于电缆数据业务接口协议为HFC接入设备的兼容性和互操作性提供了保障，本描述了协议中采用的两种多址接入技术-TDMA和SCDMA各自在对抗噪声及干扰，帧结构，容量和性能方面的特点。     

DOCSIS2.0中的SCDMA技术

目前,在HFC宽带网络中起主导作用的规范DOCSIS已经颁布了1.0,1.1和2.0 3个版本.DOCSIS2.0中在后向兼容1.0/1.1基础上,在物理层采用了ATDMA和SCDMA,其中SCDMA是一种全新的传输技术.对SCDMA技术从其特性、上行带宽提高以及噪声缓解技术几个方面进行分析.     

关于加快HFC双向宽带网络建设的思考

有线电视HFC双向网络利用DOCSIS技术，建设CMTS系统，开展互联网数据接入服务。经过几年的建设及应用，已经是一项成熟的技术，是有线电视网络传输数据信号理想的接入方式，是有线电视网络实现开展增值、渺务的一个捷径。较其他的接入方式比较有投资小、见效快等优点，日常维护量也小大，不是我们以前所想象的那样复杂。几年前我们就制定了建设CMTS系统发展计划。     

有线电视接入网技术分析

通过对现存利用同轴电缆的接入方式进行较详细的技术分析,认为HiNOC是没有进行过DOCSIS改造的网络可选的较好的接入方式,而进行过DOCSIS改造的网络宜采用C-DOCSIS作为临时方案,这两种接入方式最终都向EPOC方案过渡.     

基于下一代DOCSIS接入技术的应用研究

一下一代DOCSIS接入技术简介 下一代的DOCSIS接入技术主要是C—DOCSIS和DOCSIS3．0接入方案、C—DOCSfS接八方案是为了满足广电运营商低成本大带宽解决接入网络而提出的,广电总局已颁布行业标准,C—DOCSIS接入技术是在充分借鉴DOCSIS系统标准成熟技术内核的基础上,     

利用HFC接入Internet的MAC层协议设计与分析

分析了HFC网络实现双向数据传输的结构,分析比较了802.14/DOCSIS规范,提出使用扩频技术可以获得稳固的传输特性,就S＿CDMA多址接入方式和M＿ary CDMA方式分别设计了Internet接入的MAC层协议-竞争/冲突解决和轮询机制,分析表明该协议简单有效,易于实现。     

SCDMA农村无线接入系统

我国农村地区地形条件比较复杂、地域广阔、经济水平相对比较低，利用有线方式解决农村地区的通信，投资回报率低，SCDMA农村无线接入系统可以很好地解决这个矛盾。SCDMA农村无线接入系统的性能和核心网络的组建充分考虑了农村普遍电信服务的特点，采用大覆盖半径的宏蜂窝无线接入方式，并提供以地区或省级区域范围的组网能力。提供基本电信服务。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.