宽角度宽波长偏振分光膜系的设计研究

详细讨论在高折射率玻璃棱镜上实现宽角度宽波长偏振分光的膜系设计,设计波长为 420-680nm,在空气中的入射角变化范围达到18．5°,是3种薄膜材料实现的偏振分光设计中 角度最宽的。     

宽波段7:3 消偏振分光膜的设计及镀制

分光膜在倾斜使用时会存在较强的偏振效应,通常采用各种措施来减小这种偏振效应的影响,但基本上只能在单一波长或较窄波段范围内实现消偏振分光,其波段范围几乎不超过50 nm。根据设计要求运用解析法设计出一个合适的初始膜系,再在所设计的初始膜系基础上,运用TFCalc膜系设计软件采用解析法、Needle和变尺度优化法综合设计了45入射1 260～1 360 nm波段7:3消偏振分光膜,分析了该设计膜系的监控曲线以评价其可镀制性,并采用德国莱宝APS1104型镀膜机对所设计的膜系进行了实际镀制,获得了性能优良的45入射宽波段7:3消偏振分光膜。     

ZrO2/SiO2棱镜偏振膜的膜系优化设计与制备

对以K9玻璃为基底,采用ZrO2和SiO2为高低膜料来制备棱镜偏振膜,并进行膜系优化设计.设计指标为:波长540nm处满足Tp>99%,Ts13H3LH为最佳膜系.测试结果表明,此膜系完全满足设计指标,偏振性能优良.探讨了参考波长对偏振膜工作带宽的影响.     

宽角度位相调控反射镜的设计与研制

宽角度位相调控反射镜是下一代中高轨量子通信系统中的核心元件,用于宽角度范围内信号光的高效传递与偏振态的精确调控。基于等效多层膜理论,采用介质反射膜堆加非规整位相调控膜的膜系结构,设计了一种宽角度位相调控反射镜。选择Nb₂O₅和SiO₂分别作为高、低折射率薄膜材料,通过误差分析,优化沉积工艺,采用电子束蒸发结合离子辅助沉积的方式,在德国莱宝Lab900-plus设备上制备出该薄膜元件。研制结果表明,反射镜在780 nm处、45°±7.5°入射范围内,其反射率大于99.3%,位相差控制在3°以内,满足量子通信系统的反射率及位相差控制要求,且通过相关环境模拟实验,满足可靠性要求,为该类偏振调控薄膜元件在下一代中高轨量子卫星中的工程应用打下了坚实的基础。     

全固态准连续宽调谐激光器研究

介绍了一种宽调谐准连续钛宝石激光器,其采用腔内倍频准连续532 nm Nd∶YAG固体激光器作为泵浦源。通过合理的膜系设计,选用棱镜作为调谐元件,仅采用一个输出镜就获得了680~940 nm的宽调谐输出。当绿光功率为12 W对应重复频率4.5 kHz时,在中心波长795 nm处,其平均输出功率为2.2 W,光谱线宽为5 nm。     

受抑全内反射的偏振分光器

概述了薄膜偏振分光器的研究现状及其主要特点,对不同于MacNeille设计原理的受抑全内反射偏振分光器进行了研究,这种偏振分光器基于受抑全内反射和薄膜干涉原理,当入射角大于临界角时,在宽波段宽角度范围内反射P偏振光,透射S偏振光。重点分析这种偏振分光器的设计原理,设计了波长范围为420￣680 nm、空气中的入射角范围为±10°、膜系的消光比为TS/TP≥1000的用于背投系统的薄膜偏振分光器。     

大尺寸宽带偏振薄膜的制备与测试

用计算机辅助设计,依靠膜系自身匹配原则,压缩通带波纹,以此提高偏振膜的带宽和稳定性;同时对偏振膜的材料选择、膜系设计以及实际测量进行了研究,并在此基础上设计并制备出以HfO2/SiO2为镀膜材料,使用角度为60°,工作波长为1053nm的多层薄膜偏振片,该偏振片具有良好的光学性能和比较高的抗激光损伤阈值。     

宽带宽角圆极化微带贴片天线设计

提出一种新的宽带宽角圆极化微带天线设计方法 ,在利用 L探针进行近耦合馈电的基础上 ,通过薄介质基片加载 ,使贴片天线的阻抗带宽 ( VSWR≤ 2 )和宽角轴比带宽 ( 4 5°圆锥空域内 AR≤ 3d B)达到 2 0 %以上 ,同时保持了微带天线的固有优点 :剖面低 (厚度小于 0 .1中心频率波长 )。利用该方法设计的试验天线的带宽达到2 1 % ,从而证实了该方法的正确性和实用性     

高功率激光宽谱增透膜的研究

为满足高功率激光抽运中氙灯及其防护隔板玻璃宽谱增透的要求,采用提拉镀膜法在K9基片上通过溶胶-凝胶工艺镀制有机硅-SiO2双层宽谱增透膜系.在实验的基础上讨论了有机硅-SiO2双层膜系中膜厚的搭配以及膜系的宽谱增透特性.实验研究表明通过合理的膜层搭配和对镀膜参量的有效调控,有机硅-SiO2双层宽谱增透膜系在376～927nm连续波段内具有透射率大于98%的增透效果,激光损伤阈值大于20J/cm2(1064nm,4ns),且性能稳定,完全满足氙灯及其防护隔板上宽谱增透膜的要求.     

近红外波段偏振编码用分色片的设计与制作

在基于偏振编码的光通信试验中,需要对不同波长的线偏光进行光路分离,同时要保持分离后线偏光的偏振方向和消光比,为此设计和制备了入射角为45°的810 nm波长透射/850 nm波长反射的近红外分色片.为了抑制斜入射条件下工作波长附近s、p偏振分量的能量、相位分离,选择了合适的基础膜系,利用旁反射带边缘透、反射带光谱过渡迅速的特性,实现了临近波长的光路分离,也减小了偏振分离;通过非规整膜层的相位补偿和软件自动优化,实现了设计目标.分别选用TiO2和SiO2为高低折射率膜层材料,以离子束辅助沉积技术镀制薄膜,采用光学极值法和晶体振荡法结合的方式控制膜层厚度.制备样品的消光比在波长810 nm处达到7000∶1以上,在850 nm处达到20000∶1,实现了分色片对相位的控制,满足了偏振编码光通信试验的需求.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.